• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.58-63
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• 2004

The oxidation behavior of Ti-Nb alloys was studied in dry atmosphere. After vacuum arc melting and hot rolling treatment, Ti-Nb alloys were oxidized at $450^{\circ}C$∼$750^{\circ}C$. The oxidation behaviors between matrix and oxide scale were analyzed by SEM, XPS and XRD. Ti-Nb alloys had higher oxidation resistance than pure Ti at $750^{\circ}C$. XPS analysis of oxide film revealed that $TiO_2$ oxide was formed on the top of surface. The weight gains during the oxidation increase rapidly at temperature above $600^{\circ}C$ which obey the parabolic law.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3730-3734
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• 2011

The degree of self-assembly and the size variation of nanotubular structures in anodic titanium oxide prepared by the anodization of titanium in ethylene glycol containing 0.25 wt % $NH_4F$ at 40 V were investigated as a function of anodization time. We found that the degree of self-assembly and the size of the nanotubes were strongly dependent on thickness deviation and thus indirectly on anodization time, as the thickness deviation was caused by the dissolution of the topmost tubular structures at local areas during long anodization. A large deviation in thickness led to a large deviation in the size and number of nanotubes per unit area. The dissolution primarily occurred at the bottoms of the nanotubes ($D_{bottom}$) in the initial stage of anodization (up to 6 h), which led to the growth of nanotubes. Dissolution at the tops ($D_{top}$) was accompanied by $D_{bottom}$ after the formed structures contacted the electrolyte after 12 h, generating the thickness deviation. After extremely long anodization (here, 70 h), $D_{top}$ was the dominant mode due to increase in pH, meaning that there was insufficient driving force to overcome the size distribution of nanotubes at the bottom. Thus, the nanotube array became disorder in this regime.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.609-614
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• 1999

The effect of the amount of $SiO_2$dopant on the behavior of $AlO_2$$O_3$-composite formation by melt oxdation of Al-alloy was examined in this paper. The $SiO_2$powder was spread on the top surface of the Al-1Mg-3-Si-5Zn-1Cu alloy in th alumina crucible. The selected amount of each powder was 0.03, 0.10, 0.16g/$\textrm{cm}^2$. The oxidation behavior was determined by observing the weight gain after the heat treatment for 10 hours at 1373K. The macroscopic structure of formed oxide layer was examined by an optical microscope. The top surface and the cross-section of the grown oxide layer were investigated by SEM and analysed by EDX. The $SiO_2$ powder was determined to enhance oxidation by thermit reaction with Al which reduced the growth incubation period of the oxidation layer. As the amount of the $SiO_2$dopant increased, the growth rate decreased due to the precipitated Si which blocked the Al-alloy channel in the composite materials. However, more uniform layer was obtained due to the occurrance of the enhanced oxidation reaction in the whole alloy surface compared to the case of addition of less amount of dopant.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.550-553
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• 2010

The enhancement of quantum efficiency using a surface modified Ag anode in top-emitting organic light emitting diodes (TEOLEDs) is reported. The operation voltage at the current density of $1\;mA/cm^2$ of TEOLEDs decreased from 9.3 V to 4.3 V as the surface of anode coated with $CuO_x$ layer. The work function of these structures were quantitatively determined using synchrotron radiation photoemission spectroscopy. Secondary electron emission spectra revealed that the work function of the Ag/$CuO_x$ structure is higher by 0.6 eV than that of Ag. Thus, the $CuO_x$ structure acts as a role in reducing the hole injection barrier by about 0.6 eV, resulting in a decrease of the turn-on voltage of top-emitting light emitting diodes.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.401-406
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• 2015

The change of subthreshold swing for channel length of asymmetric double gate(DG) MOSFET has been analyzed. The subthreshold swing is the important factor to determine digital chracteristics of transistor and is degraded with reduction of channel. The subthreshold swing for channel length of the DGMOSFET developed to solve this problem is investigated for channel thickness, oxide thickness, top and bottom gate voltage and doping concentration. Especially the subthreshold swing for asymmetric DGMOSFET to be able to be fabricated with different top and bottom gate structure is investigated in detail for bottom gate voltage and bottom oxide thickness. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. As a result, subthreshold swing is sensitively changed according to top and bottom gate voltage, channel doping concentration and channel dimension.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.805-810
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• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.88-94
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• 1997

The oxidation behavior of the NiCrAlY bond coat and thermal fatigue failure in the plasma-sprayed thermal barrier coating system, ZrO2.8wt%Y2O3 top coat/Ni-26Cr-5Al-0.5Y bond coat/Hastelloy X superalloy substrate, in commercial use for finned segment of gas turbine burner were investigated. The main oxides formed in the bond coat were NiO, Cr2O3, and Al2O3. It divided the oxide distribution at this interface into two types whether an Al2O3 thin layer existed beneath ZrO2/bond coat interface before operation at high temperature or not. While a continuous layer of NiO was formed mainly in the region where the Al2O3 thin layer was present, the absence of it resulted in the formation of mixture of Cr2O3 and Al2O3 beneath NiO layer. Analyses on the fracture surface of specimen spalled by thermal cycling showed that spalling occurred mainly along the ceram-ic coat near ZrO2/bond coat oxide layer interface, but slightly in the oxide layer region.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.344-351
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• 2018

The effects of bond coat species on the growth behavior of thermally grown oxide (TGO) layer in thermal barrier coatings (TBCs) was investigated through furnace cyclic test (FCT). Two types of feedstock powder with different particle sizes and distributions, AMDRY 962 and AMDRY 386-4, were used to prepare the bond coat, and were formed using air plasma spray (APS) process. The top coat was prepared by APS process using zirconia based powder containing 8 wt% yttria. The thicknesses of the top and bond coats were designed and controlled at 800 and $200{\mu}m$, respectively. Phase analysis was conducted for TBC specimens with and without heat treatment. FCTs were performed for TBC specimens at $1121^{\circ}C$ with a dwell time of 25 h, followed by natural air cooling for 1 h at room temperature. TBC specimens with and without heat treatment showed sound conditions for the AMDRY 962 bond coat and AMDRY 386-4 bond coat in FCTs, respectively. The growth behavior of TGO layer followed a parabolic mode as the time increased in FCTs, independent of bond coat species. The influences of bond coat species and heat treatment on the microstructural evolution, interfacial stability, and TGO growth behavior in TBCs are discussed.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.