• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1065-1068
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• 2003

For the first time, high quality ultra-thin strained Si/SiGe on Insulator (SGOI) substrate with total SGOI thickness( $T_{Si}$ + $T_{SiGe}$) of 13 nm is developed to combine the device benefits of strained silicon and SOI. In the case of 6- 10 nm-thick top silicon, 100-110 % $I_{d,sat}$ and electron mobility increase are shown in long channel nFET devices. However, 20-30% reduction of $I_{d,sat}$ and electron mobility are observed with 3 nm top silicon for the same long channel device. These results clearly show that the FETs operates with higher performance due to the strain enhancement from the insertion of SiGe layer between the top silicon layer and the buried oxide(BOX) layer. The performance degradation of the extremely thin( 3 nm ) top Si device can be attributed to the scattering of the majority carriers at the interfaces.

• 한국자기학회지
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• 제12권3호
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• pp.103-108
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• 2002

나노옥사이드(nato-oxide layer, NOL) 층이 고정층에 첨가된 스펙큘라 스핀밸브(specular spin valve)와 NOL이 없는 기본 스핀 밸브를 UHV 스퍼터 시스템에서 FeMn 반강자성층을 사용하여 탑 및 바텀 형 스핀밸브를 제조하였으며, 제조한 시료의 열처리 온도에 따른 자기저항 특성 및 교환바이어스 특성을 비교 분석하였다. 탑 형 스핀밸브에서는 NOL이 있는 경우 25$0^{\circ}C$ 열처리에서 9.2%의 자기저항비를 얻을 수 있었으며, 바텀 형 스핀밸브에서는 25$0^{\circ}C$ 열처리에서 10.1%의 자기저항비를 얻을 수 있었다. 따라서 바텀 형 스핀밸브가 탑 형 스핀밸브보다 고정층에 첨가된 NOL의 스펙큘라 반사 효과가 높아 자기저항비가 증가함을 확인하였다. 또한 바텀 형 스핀밸브에서 25$0^{\circ}C$ 이상의 열처리시 NOL이 있는 경우가 NOL이 없는 경우보다 28 % 이상의 교환바이어스 증가를 보였다. 이와 같은 원인은 NOL이 첨가된 고정층의 자기모멘트의 감소와 X-선 회절 분석 결과로부터 NOL의 첨가에 따른 강화된 (111) FeMn집합조직 때문이라고 판단된다.

• 한국안전학회지
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• 제20권2호
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• pp.1-5
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• 2005

An experimental study was conducted to develop an understanding of failure of ceramic coating when subjected to a thermal cycling. Number of cycles to failure were decreased as the coating thickness and the oxide of bond coat were increased. Using the finite element method, an analysis of stress distribution in ceramic coatings was performed. Radial compressive stress was increased in the top/bond coat interface with increasing coating thickness and oxide of bond coat.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.304-305
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• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

• 한국표면공학회지
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• 제32권1호
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• pp.43-48
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• 1999

Oxidation behavior of 304 and 316 stainless steels was studied. After solution heat treatment, specimens were polished up to 1$mu \textrm{m}$ using $Al_2O_3$ powder and then subjected to oxidation between $300^{\circ}C$ and 50$0^{\circ}C$ in dry air. TEM and EDS were used for analyzing the components and structure of oxide film. TEM analysis of oxide film revealed that thin amorphous Fe oxide ($Fe_2O_3$) was formed on the top of surface while polycrystalline (Cr, $Fe_2O_3$ was formed below the amorphous Fe oxide layer. The specimens oxidized at $500^{\circ}C$ showed that 316 stainless steel had higher oxidation resistance than 304 stainless steel. These results suggest that Mo component of 316 stainless steel suppresses the formation of Cr carbide which may result in a local Cr depleted area.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.65-71
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• 1997

We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.

• 열처리공학회지
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• 제12권1호
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• pp.31-39
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• 1999

In the present study, oxidation behavior of 304 and 316 stainless steels was investigated. After solution treatment, specimens were polished up to $1{\mu}m$ $Al_2O_3$ grade and then subjected to oxidation treatment in dry air. The range of temperature was used for oxidation treatment at $300^{\circ}C{\sim}500^{\circ}C$ and TEM was used for analyzing the components and structure of oxide film. Also, these results were compared with the results of ESCA and TG. According to the results of TEM analysis, it was found that Cr oxide film was formed on top of the surface after room temperature oxidation but amorphous Fe oxide was formed on top of the surface and polycrystalline $(Cr,Fe)_2O_3$ was formed below the amorphous Fe oxide layer after $500^{\circ}C$ oxidation treatment. The oxidized specimens at $500^{\circ}C$ showed that 316 stainless steel resists more strongly to grain and grain boundary oxidation than 304 stainless steel. These results suggested that Mo component resolved in 316 stainless steel matrix suppressed the formation of Cr carbide which may results in local Cr deplete area.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• 센서학회지
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• 제16권4호
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.