• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.150-151
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• 2007

We present an one-axis parallel-plate type of bulk micromachined torsional micromirror array with single crystalline silicon (SCS) fabricated on the glass substrate. Structurally, bottom electrodes (amophous silicon) in this mirror are DRIEed along the aluminum mirror patterns on SCS, which are self-aligned with mirror plates. Tracing the history of the micromirror study, we found that few papers have been published on research for uniform driving voltages based upon the tilting direction. If there is a slight misalignment during anodic bonding between top (mirror plate) and bottom electrodes, the non-uniformity of driving voltage will be led depending on two different tilting direction. This paper discusses how much the pull-in voltages can be different due to misalignment between two electrodes. Moreover, We achieve uniform pull-in voltage regardless of misalignments in photolithography and anodic-bonding between two individual layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.431-432
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• 2007

In this study, we used screen printing on the rear glass with silver electrodes, phosphor and a dielectric which is on the silver electrodes, and carried out firing in the temperature of $550^{\circ}C$, $570^{\circ}C$, $450^{\circ}C$ each. To seal the rear and top glass together, we used crystalline frit paste as a sealing material with dispenser and carried out firing up to $450^{\circ}C$. As using this panel, we focused on optimizing the condition which influences characteristics of discharging by the distance between electrodes, electrode structure, type and pressure of gases for FFL.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.727-729
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• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.506-507
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.12-13
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.78-81
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• 2014

This paper presents an advanced patterned vertical aligned nematic liquid crystal (APVA) mode as a way of improving the transmittance of the conventional patterned, vertically-aligned nematic liquid crystal (PVA) mode. The APVA was characterized by multi-electrodes, which play an important role in generating a horizontal electric field that prevents LC disclination in the vicinity of the middle region of electrodes between top and bottom slits in PVA mode. The proposed APVA mode focused on improving dramatically the transmittance with excellent image quality. In the simulation, the APVA mode improved the transmittance by more than 22%, compared to the conventional VA modes. Therefore, it is useful to upgrade the LCD display quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.494-495
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.47 no.4
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• pp.301-304
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• 2002

The variation of alternative and cytochrome respiration during ripening in rice leaves (Oryza sativa L. cv. Takanari) was examined. The capacity of both respiration pathway was measured by inhibitor titration method using gas-phase oxygen electrodes. The alternative respiration rate decreased from 31.3% of the total respiration rate at around heading to 11.7% at 34 days after heading in the first fully expanded leaf from the top, and further to 6.4 % at 34 days after heading in the fourth leaf from the top. In contrast, the proportion of cytochrome respiration to total respiration increased with leaf senescence. The possible cause of alternative respiration as either an increase in inefficient respiration or a decrease in growth efficiency during ripening was discussed.