• 천문학회보
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• 제35권1호
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• pp.26.1-26.1
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• 2010

In this talk we outline the current understanding of solar flares, mainly focusing on magnetohydrodynamic (MHD) processes. A flare causes plasma heating, mass ejection, and particle acceleration which generates high-energy particles. The key physical processes producing a flare are: the emergence of magnetic field from the solar interior to the solar atmosphere (flux emergence), formation of current-concentrated areas (current sheets) in the corona, and magnetic reconnection proceeding in a current sheet to cause shock heating, mass ejection, and particle acceleration. A flare starts with the dissipation of electric currents in the corona, followed by various dynamic processes that affect lower atmosphere such as the chromosphere and photosphere. In order to understand the physical mechanism for producing a flare, theoretical modeling has been develops, where numerical simulation is a strong tool in that it can reproduce the time-dependent, nonlinear evolution of a flare. In this talk we review various models of a flare proposed so far, explaining key features of individual models. We introduce the general properties of flares by referring observational results, then discuss the processes of energy build-up, release, and transport, all of which are responsible for a flare. We will come to a concluding viewpoint that flares are the manifestation of the recovering and ejecting processes of a global magnetic flux tube in the solar atmosphere, which has been disrupted via interaction with convective plasma while rising through the convection zone.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.