• Biotechnology and Bioprocess Engineering:BBE
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• v.8 no.3
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• pp.192-198
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• 2003

BiP, immunoglobulin binding protein, is an ER homologue of Hsp70. However, unlit other Hsp70 proteins, regulatory protein(s) for BiP has not been identified. Here, we demo strafed the presence of potential regulatory proteins for BiP using a pull -down assay. Since BiP can bind any unfolded protein, only the ATPase domain of BiP was used for the pull -down assay in order to minimize nonspecific binding. The ATPase domain was cloned to produce recombinant protein, which was then conjugated to CNBr-activated agarose. The structural conformation and ATP hydrolysis activity of the recombinant ATPase domain were similar to those of the native protein, light proteins from metabolically labeled mouse plasmacytoma cells specifically bound to the recombinant ATPase protein. The binding of these proteins was inhibited by excess amounts of free ATPase protein, and was dependent on the presence of ATP. These proteins were eluted by ADP. Of these proteins, Grp170 and BiP where identified. while the other were not identified as known ER proteins, from Western blot analyses. The presence of the ATPase-binding proteins for BiP was first demonstrated in this study, and our data suggest similar regulatory machinery for BiP may exist in the ER, as found in prokaryotes and other cellular compartments.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.368-376
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• 2014

In order to measure the segmental impedance of the body, a bioelectrical impedance measurement system (BIMS) using multi-frequency applying method and two-electrode method was implemented in this study. The BIMS was composed of constant current source, automatic gain control, and multi-frequency generation units. Three experiments were performed using the BIMS and a commercial impedance analyzer (CIA). First, in order to evaluate the performance of the BIMS, four RC circuits connected with a resistor and capacitor in serial and/or parallel were composed. Bioelectrical impedance (BI) was measured by applying multi-frequencies -5, 10, 50, 100, 150, 200, 300, 400, and 500 KHz - to each circuit. BI values measured by the BIMS were in good agreement with those obtained by the CIA for four RC circuits. Second, after measuring BI at each frequency by applying multi-frequency to the left and right forearm and the popliteal region of the body, BI values measured by the BIMS were compared to those acquired by the CIA. Third, when the distance between electrodes was changed to 1, 3, 5, 7, 9, 11, 13, and 15 cm, BI by the BIMS was also compared to BI from the CIA. In addition, BI of extracellular fluid (ECF) was measured at each frequency ranging from 10 to 500 KHz. BI of intracellular fluid (ICF) was calculated by subtracting BI of ECF measured at 500 kHZ from BI measured at seven frequencies ranging from 50 to 500 KHz. BI of ICF and ECF decreased as the frequency increased. BI of ICF sharply decreased at frequencies above 300 KHz.

• Journal of Welding and Joining
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• v.18 no.6
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• pp.42-47
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• 2000

The object of this study is to estimate Sn-Ag-Bi-Ga solder alloy as a substitute for Sn-37Pb alloy. For Sn-Ag-Bi-Ga alloys, Ag, Bi and Ga contents are varied. (Ag : 1~5%, Ga : 3%, Bi : 3~6%) Comparing to Sn-37Pb alloy Sn-Ag-Bi-Ga alloys have wider melting temperature range up to max. $18.7^{\circ}C$. With increasing Ag, Bi contents, the wettability of the alloys increased up to max. 6.6 mN. The vickers hardness of the alloys was max. 46.4 Hv. The ultimate tensile stress of the alloys was max. 60.3 MPa and the elongation was max. 1.2%. The joint strength between circuit board and solder was max. 55.5 N and the joint strength between connector and solder was max. 176.1 N. There were no cracks in this alloys after thermal shock test.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.189-194
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• 2013

Single phase crystalline powders of $Mg_3Sb_2$ and $Mg_3Bi_2$ were prepared by mechanical alloying Mg, Sb and Bi metals with planetary ball milling for 24~48 h. The compositions of starting raw materials for single phase $Mg_3Sb_2$ and $Mg_3Bi_2$ were 3Mg : 1.8Sb and 3Mg : 1.6Bi, respectively. Two types of mechanically alloyed powders obtained were mixed at some ratios for the fabrication of $Mg_3Sb_2-Mg_3Bi_2$ composites and then hot pressed under uniaxial pressure of 70 MPa at 723 K for 1 h. The main phase of composites was a stable phase similar to $Mg_3Bi_2$ phase with a small amount of Bi phase. The distributions of Sb and Bi elements on EDS mapping images were discontinuous and their compositional contours were clear, which means that the hot pressed specimens were composites composed of two compounds of $Mg_3Sb_2$ and $Mg_3Bi_2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.536-539
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• 2007

BSCCO am films fabricated by using the evaporation method at various substrate temperatures, Tsub and ozone gas pressures $PO_3$. Despite setting the composition of thin film Bi2223, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature. This demonstrates the existence of mixed crystal composition where the phases of Bi2201, Bi2212 and Bi2223 are mixed in the crystal structure; and the single-phase film of each phase exist in a very rezone of temperature and gas pressure.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.236-245
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• 1993

Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

• Korean Journal of Mathematics
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• v.21 no.2
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• pp.161-170
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• 2013

Bae and W. Park [3] proved the Hyers-Ulam stability of bi-homomorphisms and bi-derivations in $C^*$-ternary algebras. It is easy to show that the definitions of bi-homomorphisms and bi-derivations, given in [3], are meaningless. So we correct the definitions of bi-homomorphisms and bi-derivations. Under the conditions in the main theorems, we can show that the related mappings must be zero. In this paper, we correct the statements and the proofs of the results, and prove the corrected theorems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.65-68
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• 1999

A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.615-618
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(l00) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785 $^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.lms.