• Korean Journal of Materials Research
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• v.21 no.1
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• pp.46-49
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• 2011

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

• Human Ecology Research
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• v.58 no.3
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• pp.375-390
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• 2020

This paper explored the marriage migrant mothers' experiences of parenting bi-ethnic children in South Korea based on the concepts of ethnic socialization and intersectionality. We analyzed in-depth interviews of 22 marriage migrant women from Vietnam residing in the capital region of South Korea. They had at least one child whose biological father is Korean. Children were 5 years old or older, attending preschool or elementary school. Five types of bi-ethnic socialization strategies were identified, which provide portraits of different situations in which marriage migrant women were placed. The five strategies that emerged from the data were 1) "Natural practice of bi-ethnic socialization" including two heterogeneous groups, "Coexistence of two cultures" and "Mixture of two cultures", 2) "Active practice of bi-ethnic socialization", 3) "Struggling practice of bi-ethnic socialization", 4) "Silence on bi-ethnic socialization", and 5) "Suppressed bi-ethnic socialization". The strategies of bi-ethnic socialization that marriage migrant women chose to raise their children reflected personal perceptions of Korean society and individual ethnic identity formed within Korean society. This study complements existing research on ethnic socialization by examining how ethnic socialization practices are shaped by multiple contexts marriage migrant women embedded in Korean society.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1543-1550
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• 2010

This work presents oxidation of formic acid on Bi-modified Pt nanoparticles of various sizes. The sizes of the studied Pt nanoparticles range from 1.5 to 5.6 nm (detailed in Rhee, C. K.; Kim, B.-J.; Ham, C.; Kim, Y.-J.; Song, K.; Kwon, K. Langmuir 2009, 25, 7140-7147), and the surfaces of the Pt nanoparticles are modified with irreversibly adsorbed Bi. The investigated coverages of Bi on the Pt nanoparticles are 0.12 and 0.25 as determined by coulometry of the oxidation of adsorbed hydrogen and Bi, and X-ray photoelectron spectroscopy. The cyclic voltammetric behavior of formic acid oxidation reveals that the adsorbed Bi enhances the catalytic activity of Pt nanoparticles by impeding a poison-forming dehydration path with a concomitant promotion of a dehydrogenation path. The chronoamperometric results indicate that elemental Bi and partially oxidized Bi are responsible for the catalytic enhancement, when the Bi coverages on Pt nanoparticles are 0.12 and 0.25, respectively. The size effect of Bi-modified Pt nanoparticles in formic acid oxidation is discussed in terms of specific activity (current per unit surface area) and mass activity (current per unit mass).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.69-72
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• 1999

A Well oriented Bi$_2$re$_2$CaCu$_2$O$\sub$8/(Bi2212) superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape using method in which Cu-free BSCO powder mixture was printed on copper plate and heat-treated. And we examined the mechanism for the rapid formation of Bi2212 superconducting films from observing the surface microstructure with heat-treatment time. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Following the partial melting, the Bi$_2$Sr$_2$CaCu$_2$O$\sub$8/ superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. It was confirmed that the phase colony from the phase diagram of Bi$_2$O$_3$-(SrO+CaO)/2-CuO system is similar to the observed result.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.15-18
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• 2009

To enhance near UV-visible absorption region and to applied phosphor convert-white LEOs (PC-WLEDs), a red phosphor composed of ${Y_2}{SiO_5}:\;EU^{3+}$, $Bi^{3+}$ compounds was prepared by the conventional solid-state reaction. The photoluminescence (PL) shown that samples were excited by near UV light 395 nm for measurement of PL spectra. Emission spectra of samples have shown red emissions at 612 nm ($^5D_0{\to}^7F_2$). The enhanced near $UV{\sim}$ visible excitation spectrum with a broad band centered at 258 nm and 282 nm originated in the transitions toward the charge transfer state (CTS) due to the $Eu^{3+}-Bi^{3+}-O^{2-}$ interaction. The other excitation band at $350\;nm{\sim}480\;nm$, corresponding to the transitions $^7F_0{\to}^5L_9$ (364 nm), $^7F_0{\to}^5G_3$ (381 nm), $^7F_0{\to}^5L_6$ (395 nm), $^7F_0{\to}^5D_3$, (415 nm) and $^7F_0{\to}^5D_2$ (466 nm), occurred due to enhanced the f-f transition increasing $Bi^{3+}$ and $Eu^{3+}$ ions. The PL intensity increased with increased as concentration of $Bi^{3+}$ and the emission intensity becomes with a maximum at 0.125 mol.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.351-354
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• 2002

In most of electrical applications using Bi-2223/Ag HTS tapes, bending and tension stresses are essentially applied to the tape. Therefore, the critical current of the Bi-2223/Ag tape is degraded by increasing the deformation stress, though brittle superconducting filaments are embedded in the reinforced Ag alloy sheath. It is needed to understand bending and tension properties of HTS tapes at room temperature and cryogen to make superconducting magnet, cable and etc. using Bi-2223/Ag HTS tapes. Actually, bending and tension stress applied to the tapes simultaneously, when winding the tapes on former for applications. In this study, the effect of mechanical deformations, bending and tension, on the critical current of Bi-2223/Ag tape was investigated.

• Journal of the Korean Institute of Rural Architecture
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• v.11 no.2
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• pp.45-52
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• 2009

In our traditional living lives, our ancestors have been succeeded in and developed the shortage-replenishing materials to balance with the nature and supplement the condition of geography by the measures, called the BiBo, in order to be harmonized with the nature. This study is purposed to find the meaning and quality of the BiBo materials distributed throughout the agriculture village in Yeoungdong area, Gangwon province in terms of scenery perspectives. It is found that there are 56 village forests, 18 BiBo symbolic properties and 2 BiBo ponds in Yeoungdong area, Gangwon province. Among these, village forests are largely consisting of pine trees and most of them are functioned for water-entrance defender. Including these village forests, the BiBo symbolic properties are important historic and cultural resources in this area and expected to be used as the income-source of the farm village.

• Journal of Powder Materials
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• v.3 no.4
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• pp.253-259
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• 1996

The efficiency of thermoelectric devices for different applications is known to depend on the thermoelectric effectiveness of the material which tends to grow with the increase of its chemical homogeneity. Thus an important goal for thermal devices is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification (melt spinning method) followed by hot pressing was investigated to produce homogeneous material. Characteristics of the material were examined with HRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as dopant ${CdCl}_{2}$ quantity and hot pressing temperature. Quenched ribbons are very brittle and consist of homogeneous $Bi_2Te_3$, ${Bi}_{2}{Se}_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 2.038$\times$$10^{-3}K^{-4}. The bending strength of the material hot pressed at 50$0^{\circ}C$ was 8.2 kgf/${mm}^2$.

• Journal of Industrial Technology
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• v.24 no.B
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• pp.59-64
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• 2004

GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c($4{\times}4$) to As-rich ($2{\times}4$), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of $450^{\circ}C$, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a ($2{\times}4$) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature($550^{\circ}C$), finally becoming As-terminated ($2{\times}4$) surface.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.37-42
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• 1996

The $Bi_{12}(Si,Ge)O_{20}$ single crystals were prepared by Czochralski method and the study of electrical and optical properties were carried out. The activation energy of the electrical conductivity was $E_g$=1.12 eV. The optical energy gap measured in the room temperature is found to be 2.3 eV. A.c. conductivity of crystal $Bi_{12}(Si,Ge)O_{20}$ was measured at temperatures from 290 K to 570 K in the frequency range from 50 kHz to 30 MHz. The a.c. conductivity is proportional to ${\omega}^s$. In view of this it should be hopping conduction mechanisms. At high frequencies, the power exponent was s=2. The low frequency dielectric constants were 54 for $Bi_{12}(Si,Ge)O_{20}$ and 41 for $Bi_{12}(Si,Ge)O_{20}$ single crystals.