• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.13-19
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• 2013

It is expected that progress in building-integrated photovoltaic (BIPV) systems, improving the functionality and design of buildings, will be accelerated in the coming years. While the dye sensitized solar cell is considered one of the most important technologies in the BIPV field, the transparent silicon based thin film solar cell fabricated by thin film processes has drawn attention as a novel alternative. When the selective transmitting layer is applied to the solar cell, the conversion efficiency is improved due to the re-reflection of infrared light into an absorber layer with the transmission of visible light through the solar cell. In this work, we prepared Al-Ti based oxide thin films using cost-effective sputter deposition and examined their selective transmitting characteristics with various compositions. The transmittance and reflectance of the Al-Ti based oxide thin film changed with the variation of its composition, and the selective transmitting property was observed in the sample with the 25 nm-thick AlTiO layer. It is considered that the realization of transparent solar cells and the improvement of their conversion efficiency can be achieved by introducing the Al-Ti based selective transmitting layer.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.377-382
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• 1998

Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.157-162
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• 2016

Porous $Co(OH)_2$ nano-flake thin films were prepared by a potential-controlled electro-deposition technique at various deposition voltage (-0.75, -1.0, -1.2, and -1.4 V) on Ti-mesh substrates for supercapacitor application. The potential of electrode was controlled to regulate the film thickness and the amount of $Co(OH)_2$ nano-flake on the titanium substrate. The film thickness was shown to reach the maximum value of $34{\mu}m$ at -1.4 V of electrode potential, where 17.2 g of $Co(OH)_2$ was deposited on the substrate. The specific discharge capacitances were measured to be 226, 370, 720, and $1008mF\;cm^{-2}$ in the 1st cycle corresponding to the films which were formed at -0.75, -1.0, -1.2, and -1.4 V of electrode potentials, respectively. Then the discharge capacities were decreased to be 206, 349, 586 and $866mF/cm^{-2}$, where the persistency rates were 91, 94, 81, and 86%, respectively.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.199-209
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• 1994

$PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.

• Journal of Dental Rehabilitation and Applied Science
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• v.25 no.2
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• pp.183-190
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• 2009

The aim of this study is to find the condition of forming the favorable nanotubes by anodizing with NaF and $H_3PO_4$. Machined Ti discs were used for anode, and Platinum net was used for cathode. For electrolyte, $H_3PO_4$ and NaF solution were mixed. We controlled voltage, electrolyte concentration, anodizing time and formed nanotubes on Ti discs. After that, these were washed with distilled water for 24 hours and dried in the $40^{\circ}C$ oven for 24 hours. The surface structure of specimens were analyzed. The results were as follows : At 0.5 wt % NaF, according as increasing voltage and anodizing time, early state of nucleating pores were generated. At 1.0 wt % NaF, 20 V, 20 & 25 min, well-formed nanotubes were observed. At 1.0 wt % NaF, 30 V, structure of nanotube became bigger and interconnected. At 2.0 wt % NaF, no nanotubes were formed and it was unrelated with voltage and time. At 1.0 wt % NaF, 20 V, 20 - 25 min, well-ordered nanotubes were generated on Ti discs. For the formation of favorable nanotubes, it is considered that proper parameters such as electrolyte concentration, voltage, anodizing time are necessary according to the kind of electrolytes.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.217-222
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• 1998

Coating films of $SiO_2-TiO_2-AgO$ have been prepared on soda-lime-silica slide glasses and single crystal silicon wafer by the sol-gel method using a spin-coating technique. Commercially available tetraethyl orthosilicate, titanium trichloride, and silver-nitrates were used as starting materials. The heat treatment temperature of this coating films was $500^{\circ}C$ properly, obtained from TG-DTA result. The films with thickness of 310 nm were prepared by 5 times coating. In the case of l0 mol% AgO, the film showed a crack-free and smooth surface, but the higher Ago content exhibited the more pin hole and the segregated cluster of AgO. The IR absorbance of the films decreased in the range of 400 nm to 700 nm with the increase of annealing temperature. And the reflectance of the coating films decreased and the color was changed light yellow to white yellow with the increase of Ago content.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.