• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• Journal of Practical Engineering Education
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• v.6 no.2
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• pp.105-110
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• 2014

In this work, mechanical characteristics of titanium diaphragm have been studied as a potential robust substrate and a diaphragm material for automotive tire pressure sensor. Lamination process techniques combined with traditional micromachining processes have been adopted as suitable fabrication technologies. To illustrate these principles, capacitive pressure sensors based on titanium diaphragm have been designed, fabricated and characterized. The fabrication process for micromachined titanium devices keeps the membrane and substrate being at the environment of 20 MPa pressure and $200^{\circ}C$ for a half hour and then subsequently cooled to $24^{\circ}C$. Each sensor uses a stainless steel substrate, a laminated titanium film as a suspended movable plate and a fixed, surface micromachined back electrode of electroplated nickel. The finite element method is adopted to investigate residual stresses formed in the process. Besides, out-of-plane deflections are calculated under pressures on the diaphragm. The sensitivity of the fabricated device is $9.45ppm\;kPa^{-1}$ with a net capacitance change of 0.18 pF over a range 0-210 kPa.

• Advances in nano research
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• v.17 no.1
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• pp.33-49
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• 2024

Using the mechanical treatments for mechanical properties improvement was rarely in the development scope before. This research approves through analytical ways that surface impacts can improve the quality of the surface significantly. This fact is approved for deposited titanium on silicone substrate. The new algorithm called minimum resultant error method (MREM) which is a direct combination of nanoindentation, FEM and dimensional analysis through a reverse method is utilized to extract the mechanical characteristics of the coating surface before and after impact. This method is extended to the time dependent behavior of the material to obtain strain rate coefficient. To implement this new approach, a new analysis technic is developed to define the residual stress field caused by surface impact as initial condition for nanoindentation. Analyzing the model in micro and macro scale at the same time was one of the main resolved challenges in this study. The result was obtaining of the constants of Johnson-Cook constitutive equation. Comparing the characteristics of the coating surface before and after impact shows high improvement in yield stress (34%), Elastic modulus (7.75%) and strain hardening coefficient (2.8%). The main achievement is that the strength improvement in titanium thin layer is much higher than bulk titanium. The yield strength shows 41.7% improvement for coated titanium comparing with 24% for bulk material. The rate of enhancement is about 6 times when it comes to the Young's modulus.

• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Proceedings of the SCSK Conference
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• 2003.09a
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• pp.97-97
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• 2003

Chemists must take into consideration more factors to formulate with inorganic sunscreens than many other active ingredients including organic sunscreens. Because the UV radiation attenuation grade particles of Titanium Dioxide and Zinc Oxide are in the nanometer range, the state of their dispersion in the product film on the skin governs their efficacy and aesthetics.(omitted)

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.78-78
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• 2005

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.638-644
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• 1993

The degradation of dielectric breakdown field of 8nm-thick gate oxide ($SiO_2$) for Tipolycide MOS(meta1-oxide-semiconductor) capacitor with different annealing conditions and thickness of the polysilicon film on gate oxide was investigated. The degree of degradation in dielectric breakdown strength of the gate oxide for Ti-polycide gate became more severe with increasing annealing temperature and time, especially, for the case that thickness of the polysilicon film remained on the gate oxide after silicidation was reduced. The gate oxide degradation may be occurred by annealing although there is no direct contact of Ti-silicide with gate oxide. From SIMS analysis, it was confirmed that the degration of gate oxide during annealing was due to the diffusion of titanium atoms into the gate oxide film through polysilicon from the titanium silicide film.

• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.466-471
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• 1994

The polymeric titania sol was prepared via partial hydrolysis of titanium isopropoxide and its characteristics were investigated. The effect of solvent, catalyst and water content on the sol stability was investigated. The shear viscosities of sol solution at different temperatures were measured to determine the gel time. Employing the spin coating technique, optically clear and transparent titanium oxide thin film was fabricated. Even after doped with second-order nonlinear optical(NL0) active monomers, the film quality was maintained very homogeneous. The film was corona-poled under 3~ 5kV at 50~$100^{\circ}C$ range. The electro-optic coefficient, $r_{33}$ was measured to be 1.5~5pm/V using the wavelength, 632.8nm from He-Ne laser.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.318-326
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• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.