• Journal of IKEEE
• /
• v.25 no.1
• /
• pp.69-75
• /
• 2021

In this work, we consider the fabrication method and electrical characteristics of dye-sensitized solar cells (DSSCs), which use titanium (Ti) metal thin films to replace expensive fluorine tin oxide (FTO) electrodes. The thickness of the Ti thin film was changed by adjusting the deposition time of the Ti, and the surface resistance decreased as the thickness of the Ti thin film became thicker. The thickness of the Ti thin film was shown to be similar to the surface resistance of the FTO thin film at approximately 190nm and the DSSC with a thickness of approximately 250nm showed the highest energy conversion efficiency of 4.24%. Furthermore, the possibility of commercialization was confirmed by fabricating and evaluating the DSSC module.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.37-37
• /
• 2001

TiN coatings were applied for VarIOUS application fields, because of a good wear-resistance and a high hardness. Typically, TiN thin films show the hardness of 25GPa and friction coefficient of 0.6. However, in many field, one is looking for a more improved tool which has low friction coefficient and high wear resistance. The main motivation of this study is to characterize the influence of copper dopant content on TiN thin films. Ti-Cu-N thin films were deposited onto D2 steel substrates by PVD processing with various magnetron current densities (Cu contents). In this work, we synthesized titanium nitride films similar with reported typical titanium nitride films and synthesized Ti-Cu-N thin films with the addition of elemental copper which is measured improved hardness more than pure TiN films with copper content variables. This films has preferred oriented films of (111) direction. In addition, It was found that there is a strong correlation between content of various metal and film characteristics such as preferred orientation, grain size, hardness and friction coefficient and so, in future study, improved mechanical properties of TiN films can be controlled by change in target current density. The Ti-Cu-N film will show apparent hardness improvement and mechanical properties enhancement, when doping element is added onto TiN thin films. Film structure, chemical composition, mechanical properties were investigated by means of X-ray diffraction(XRD), scanning electron microscopy(SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy(EDS), wear resistance tester and nanohardness tester.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.10 no.4
• /
• pp.96-101
• /
• 2011

The thin films of TiN have been used extensively as wear-resistant materials, for instance, such as tools of high-speed cutting, metal mold forming etc. In these days, because the thin films capable of being used more severe conditions are needed, the technologies of arc ion plating are tried to improve its characteristics. The purpose of this study is to investigate the characteristics of thin films of (Ti,Cr)N compared with those of TiN. The method of arc ion plating, which is known as showing good tight-adherence and productivity, was used. After manufacturing thin films of ($Ti_{1-x}Cr_{x}$)N (x=0~1) with change of Cr in (Ti,Cr) target, atomic concentration, structure, size of crystallite, residual stress and surface roughness of thin films on substrate were investigated. As the results, it was confirmed that Cr atomic concentrations of thin films were proportionally changed with Cr atomic concentrations of target, and thin films of ($Ti_{1-x}Cr_{x}$)N (x=0~1) showed NaCl type and CrN existed as solid solution to TiN.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.2
• /
• pp.87-95
• /
• 2023

TiO₂ thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO₂ thin films grown by the ALD deposition method were studied. The grown TiO₂ thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO₂ thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO₂ as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

• Korean Journal of Materials Research
• /
• v.10 no.1
• /
• pp.90-96
• /
• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.211-211
• /
• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• The Korean Journal of Ceramics
• /
• v.7 no.1
• /
• pp.20-25
• /
• 2001

PbTiO$_3$ thin films were prepared by low-pressure thermal plasma deposition on (100)Pt/(100)MgO substrates. Mist of source material in which metal alkoxides are dissolved in 2-methoxyethanol was introduced into plasma through heating furnace and deposited onto substrates at $600^{\circ}C$. As-deposited PbTiO$_3$/Pt/MgO thin film prepared at 1.33$\times$10$^4$ Pa was grown epitaxially, but was consisted of many rectangular shaped grains, with many grain boundaries and it was impossible to measure electric properties. As-deposited film prepared at 1.00$\times$10$^4$ Pa showed weak peaks of X-ray diffraction and the film was not grown epitaxially. On the other hand, the film after annealed at $700^{\circ}C$ showed strong diffraction peaks and epitaxial growth was also observed. For annealed film, moreover, no clear grain boundaries were observed. The value of ${\varepsilon}_r$, tan${\delta}$, Pr and Ec of annealed film were 160, 3.2%, 10.4${\mu}$C.cm$^-2$ and 51.2kV.cm$^-1$, respectively. Since the composition, Pb/Ti, measured by EDS attaching to SEM changed point by point, the distribution of composition in annealed film was investigated and found out several relations between composition and electric properties. At stoichiometric composition, Pr and Ec showed the lowest value and they gradually became large as composition deviated from stoichiometric one. Moreover, the value of ${\varepsilon}_r$ became gradually large as the ratio of Ti became high.

• The korean journal of orthodontics
• /
• v.51 no.4
• /
• pp.270-281
• /
• 2021

Objective: The aim of this in vitro study was to evaluate the changes in friction between orthodontic brackets and archwires coated with aluminum oxide (Al₂O₃), titanium nitride (TiN), or chromium nitride (CrN). In addition, the resistance of the coatings to intraoral conditions was evaluated. Methods: Stainless steel canine brackets, 0.016-inch round nickel-titanium archwires, and 0.019 × 0.025-inch stainless steel archwires were coated with Al₂O₃, TiN, and CrN using radio frequency magnetron sputtering. The coated materials were examined using scanning electron microscopy, an X-ray diffractometer, atomic force microscopy, and surface profilometry. In addition, the samples were subjected to thermal cycling and in vitro brushing tests, and the effects of the simulated intraoral conditions on the coating structure were evaluated. Results: Coating of the metal bracket as well as nickel-titanium archwire with Al₂O₃ reduced the coefficients of friction (CoFs) for the bracket-archwire combination (p < 0.01). When the bracket and stainless steel archwire were coated with Al₂O₃ and TiN, the CoFs were significantly lower (0.207 and 0.372, respectively) than that recorded when this bracket-archwire combination was left uncoated (0.552; p < 0.01). The friction, thermal, and brushing tests did not deteriorate the overall quality of the Al₂O₃ coatings; however, some small areas of peeling were evident for the TiN coatings, whereas comparatively larger areas of peeling were observed for the CrN coatings. Conclusions: Our findings suggest that the CoFs for metal bracket-archwire combinations used in orthodontic treatment can be decreased by coating with Al₂O₃ and TiN thin films.

• Journal of the Korean Electrochemical Society
• /
• v.11 no.2
• /
• pp.100-104
• /
• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.10
• /
• pp.2849-2853
• /
• 2010

A method to improve the photocatalytic activity of titanium dioxide by modification with a sensitizer and a metal oxide is proposed. To achieve this goal, we used metal oxides as dopants. In particular, $CaWO_4$ and $Gd_2O_2S$:Tb were used because their 2.6 eV and 2.2 eV band gap energy and optical properties have a large positive effect on photocatalysis. The improvement in the photocatalytic activity of $TiO_2$ modified with $Gd_2O_2S$:Tb under ultraviolet light irradiation is described in a previous study. The present work focuses on the sensitization of metal oxide-modified $TiO_2$. Having observed the ultraviolet-visible absorption spectra of 3,4,9,10-Perylenetetracarboxylic diimide in the wide visible-light region from 400 nm to 650 nm and the broad peaks in its photoluminescence spectra at 695 nm and 717 nm, we decided to use this perylene dye to sensitize modified $TiO_2$ to enhance its activity as a visible-light harvesting photocatalyst. We also explored the positive effects thin-film surface changes stemming from ultraviolet pre-treatment have on photocatalytic activity. Finally, we subjected several metal oxide-modified $TiO_2$ products sensitized by the perylene dye to ultraviolet pre-treatment, obtaining the most active photocatalysts.