• The Korean Journal of Nuclear Medicine
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• v.28 no.3
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• pp.326-330
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• 1994

A $^{82}Sr/^{82}Rb$ generator was prepared by loading $^{82}Sr$ to preconditioned tin dioxide column. The generator was eluted by normal saline with flow rate up to 8m1/min, and the eluted radioactivity was monitored by dose calibrator. Radioactivity began to come out at 5ml and reached to peak around 9ml. The total eluted radioactivity increased linearly with flow rate, and the maximum obtained radioactivity was 35mCi at 8m1/min. The $^{82}Rb$ preparation was proven to be free from both strontium radioactivity and pyrogen. The $^{82}Rb$ was injected to normal female volunteer and positron emission tomographic Image of heart was obtained successfully.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.217-218
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• 2015

주석은 최근 첨단 전기, 전자 제품의 핵심 소재로써 지속적인 수요 증가가 예상되는 전략 금속이다. 국내의 수요량은 2011년 기준 약 17,000톤 으로 99% 이상 수입에 의존하고 있는 실정이다. 그러나, 국내의 주석 제련 산업은 전무한 상태이며 폐자원에서 재활용하는 회수 기술도 초보 단계이다. 이러한 폐자원 발생량은 12,000톤/year이며, 약 1200억원에 달하는 규모이다. 다양한 폐자원의 선별적 전처리 요소 기술 개발 및 회수 공정 시스템 개발이 절실히 요구된다. 본 연구에서는, 주석 폐자원 중 solder 용융물 및 공정 스크랩 Lead solder, Lead-free solder 등 뿐만 아니라, ITO target 제조 시 발생하는 ITO sludge 등의 고상 폐자원으로부터 페자원의 물성을 파악하여 금속/산화물과의 파/분쇄 및 분급공정을 통하여 고품위의 주석 금속을 회수하였다. 뿐만 아니라, 고순도 주석시 발생하는 양극 슬라임 침출액 등의 액상 폐자원으로부터 희소금속의 추출 및 회수를 위해 습식 전처리 공정을 수행하였다. 침출액은 주석, 구리, 납 등의 유가금속이 이온형태로 존재하고 있으며, Chlorine이 다량 함유되어 있다. 고품위의 주석 산화물을 회수하기 위하여 침출액 내의 구리 제거 공정, Chlorine 제거 공정 등을 순차적으로 수행하여 고품위의 산화물 회수를 수행하였다.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1199-1204
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• 2013

Nanocomposites consisting of Sn nanoparticles and graphene oxide (GO) were electrophoretically deposited onto Cu current collectors that was used for anodes in Li ion batteries (LIBs). In order to optimize the electrochemical performance of nanocomposites as an anode material by controlling the oxygen functionality, the GO was subjected to $O_3$ treatment prior to electrophoretic deposition (EPD). During thermal reduction of the GO in the nanocomposites, the Sn nanoparticles were reduced in size, along with the formation of SnO and/or $SnO_2$ at a small fraction, relying on the oxygen functionalities of the GO. The variation in the duration of time for the $O_3$ irradiation resulted in a small change in total oxygen content, but in a significantly different fraction of each functional group in the GO, which influenced the Sn nanoparticle size and the amount of SnO (and/or $SnO_2$). As a result, the EPD films prepared with the GO that possessed the least amount of carboxylic groups (made by treating GO in an $O_3$ environment for 3 h) showed the best performance, when compared with the nanocomposites composed of untreated GO or GO that was $O_3$-treated for a duration of less than 3 h.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.112-115
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• 2015

In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.1
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• pp.8-17
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• 2023

In conventional liquid crystal display(LCD) manufacturing process, Indium Tin Oxide(ITO) as transparent electrode and rubbing process of polyimide as alignment layer are essential process to apply electric field and align liquid crystal molecules. However, there are some limits that deposition of ITO requires high vacuum state, and rubbing process might damage the device with tribolectric discharge. In this paper, we made nanocomposite with PEDOT:PSS and MWNT to replace ITO and constructed alignment layer by nano imprint lithography with nano wrinkle pattern, to replace rubbing process. These replacement made that only one PEDOT:PSS/MWNT film can function as two layers of ITO and polyimide alignment layer, which means simplification of process. Transferred nano wrinkle patterns functioned well as alignment layer, and we found out lowered threshold voltage and shortened response time as MWNT content increase, which is related to increment of electric conductivity of the film. Through this study, it may able to contribute to process simplification, reducing process cost, and suggesting a solution to disadvantage of rubbing process.

• Progress in Medical Physics
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• v.21 no.2
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• pp.232-237
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• 2010

The shielding materials designed for replacement of lead equivalent materials for lighter apron than that of lead in diagnostic photon beams. The absorption characteristics of elements were applied to investigate the lead free material for design the shielding materials through the 50 kVp to 110 kVp x-ray energy in interval of 20 kVp respectively. The idea focused to the effect of K-edge absorption of variable elements excluding the lead material for weight reduction. The designed shielding materials composited of Tin 34.1%, Antimon 33.8% and Iodine 26.8% and Polyisoprene 5.3% gram weight account for 84 percent of weight of lead equivalent of 0.5 mm thickness. The size of lead-free shielder was $200{\times}200{\times}1.5\;mm^3$ and $3.2\;g/cm^3$ of density which is equivalent to 0.42 mm of Pb. The lead equivalent of 0.5 mm thickness generally used for shielding apron of diagnostic X rays which is transmitted 0.1% for 50 kVp, 0.9% for 70 kVp and 3.2% for 90 kVp and 4.8% for 110 kVp in experimental measurements. The experiment of transmittance for lead-free shielder has showed 0.3% for 50 kVp, 0.6% for 70 kVp, 2.0% for 90 kVp and 4.2% for 110 kVp within ${\pm}0.1%$. respectively. Using the attenuation coefficient of experiments for 0.5 mm Pb equivalent of lead-free materials showed 0.1%. 0.3%, 1.0% and 2.4%, respectively. Furthermore, the transmittance of lead-free shielder for scatter rays has showed the 2.4% in operation energy of 50 kVp and 5.9% in energy of 110 kVp against 2.4% and 5.1% for standard lead thickness within ${\pm}0.2%$ discrepancy, respectively. In this experiment shows the designed lead-free shielder is very effective for reduction the apron weight in diagnostic radiation fields.

• Polymer(Korea)
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• v.39 no.1
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• pp.122-129
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• 2015

Recently, the development of a new class of anti-fouling paint resin which has excellent anti-fouling performance and no persistence in the marine ecology is necessary. In this study, we first polymerized polyurethanes (PUs) as the other type of matrix which have carboxylic acid groups by using poly(ethylene glycol) (PEG), 4,4'-diphenylmethane diisocyanate (MDI), and 2,2'-bis(hydroxyl methyl)-propionic acid (DMPA). And next, we synthesized final resins having quaternary ammonium salts on pendant acid groups of PUs. After synthesis, the physical self-polishing property of resin by the measurement of reduced thickness in sea water was tested. The mechanical property of antifouling paint resin was good when the molecular weight of PEG was 600 or less. It was confirmed that the adhesion of PU resin was deteriorated when the content of quaternary ammonium salt was incorporated over specific value.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.237.1-237.1
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• 2015

OLED의 낮은 외부 광자 효율 문제를 해결하기 위해서는 발광층은 물론 전극 재료에 대한 연구가 함께 진행되어야 한다. 최근 플렉서블 디스플레이(Flexible Display) 분야에서 투명전극(Transparent Electrode)은 큰 주목을 받고 있다. 기존 전자소자의 투명전극으로는 인듐산화물(ITO, Indium Tin Oxide)이 널리 사용되어 왔으나, ITO의 주원료인 인듐(Indium)은 희소성으로 인해 앞으로 30년 후에 고갈될 것으로 예상되어 ITO를 대체할만한 투명전극 재료가 필요하게 되었다. 인듐이 포함되지 않은(Indium-free) 투명전극을 개발하려는 많은 연구들이 진행 중인데, 본 연구에서는 PEN(Polyethylene Naphthalate) 유연기판 상에 그래핀(Graphene)을 투명전극으로 구현하여 OLED의 효율을 높이는데 이용하고자 하였다. 화학 기상 증착(CVD, Chemical Vapor Deposition) 방법을 이용하여 Cu 호일 위에 그래핀을 성장시킨 후 PEN 유연기판에 전사하여 그래핀 투명전극을 구현하면서 그래핀 성장층을 단층 또는 다층으로 구분하여 성장시켜 각각의 투명전극을 구현해보았다. 유연기판 상의 그래핀의 상태를 확인하기 위해 라만 분광(Raman Spectroscopy) 분석을 이용하여 그래핀 고유의 라만 꼭지점(Raman peak)인 G 꼭지점(G peak: 1580 cm-1), 2D 꼭지점(2D peak: ~2700 cm-1)을 확인하였는데 그래핀 전사 상태가 양호하여 D 꼭지점(D peak: ~1360 cm-1)은 나타나지 않았다. 원자힘 현미경(AFM, Atomic Force Microscope) 분석을 통해 다층 및 단층 그래핀 표면의 거칠기(Roughness) 및 두께(Thickness)를 각각 확인할 수 있었고 자외선-가시광선 분광법(UV-Visible Spectroscopy) 분석으로 그래핀 투명전극과 유연기판의 투과도(Transmittance)를 분석하였으며, 단층 그래핀 투과도가 90%수준의 높은 값이 나타나 ITO보다 개선됨을 확인하였다. 그래핀 면저항은 TLM(Transmission Line Measurement)법을 통해 측정하였는데, 단층 그래핀의 경우 $800{\Omega}/{\square}$ 내외 수준임을 확인할 수 있었다. 본 연구에서는 근자외선 영역에서 높은 투과도와 우수한 전기적 특성을 가지는 그래핀 투명 전도성 전극 구조를 제안하고, 나아가 가시영역에서 ITO를 대체할 수 있는 투명 전도성 전극 물질을 개발함으로써 발광다이오드의 광효율을 높일 수 있는 투명 전도성 전극을 구현하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.1-5.1
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• 2009

Organic photovoltaic (OPV)cells have attracted considerable attention due to their potential for flexible, lightweight, and low-cost application of solar energy conversion. Since a 1% power conversion efficiency (PCE) OPV based on a single donor-acceptor heterojunction was reported by Tang, the PCE has steadily improved around 5%. It is well known that a high parallel (shunt)resistance and a low series resistance are required simultaneously to achieve ideal photovoltaic devices. The device should be free of leakage current through the device to maximize the parallel resistance. The series resistance is attributed to the ohmic loss in the whole device, which includes the bulk resistance and the contact resistance. The bulk resistance originated from the bulk resistance of the organic layer and the electrodes; the contact resistance comes from the interface between the electrodes and the active layer. Furthermore, it has been reported that the bulk resistance of the indium tin oxide (ITO) of the devices dominates the series resistance of OPVs for a large area more than $0.01\;cm^2$. Therefore, in practical application, the large area of ITO may significantly reduce the device performance. In this work, we investigated the effect of sheet resistance ($R_{sh}$) of deposited ITO on the performance of OPVs. It was found that the device performance of polythiophene-fullerene (P3HT:PCBM) bulk heterojunction OPVs was critically dependent on Rsh of the ITO electrode. With decreasing $R_{sh}$ of the ITO from 39 to $8.5\;{\Omega}/{\square}$, the fill factor (FF) of OPVs was dramatically improved from 0.407 to 0.580, resulting in improvement of PCE from $1.63{\pm}0.2$ to $2.5{\pm}0.1%$ underan AM1.5 simulated solar intensity of $100\;mW/cm^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1220-1224
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• 2007

The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.