• Korea Trade Review
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• v.47 no.4
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• pp.177-195
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• 2022

This study analyzed the volatility spillover effect between international non-ferrous metal futures markets using the BEKK-GARCH model. Statistical data are futures price data of copper (CU), aluminum (AL), nickel (NI), tin (SN) from Shanghai Futures Exchange (SHFE) and London Metal Exchange (LME) from April 1, 2015 to December 31, 2021. Combining the research results, first, in the case of copper, aluminum, and nickel, it was found that there was a two-way volatility spillover effect between the Shanghai and London markets, and the international influence of the London market was greater. Second, in the case of the tin, it was found that the Shanghai market has a volatility spillover effect on the London market from stage I, and it is strengthened in stage II. Third, in the case of nickel, it was found that there was a two-way volatility spillover effect in the first stage, but in the second stage, the London market had a unidirectional volatility spillover effect with respect to the Shanghai market. This study confirmed that China's influence in the international non-ferrous metal futures market is gradually increasing. In addition, it suggested that international investors can engage in arbitrage and hedging using China's non-ferrous metal futures market.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.53-58
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• 2020

In this study, we developed plasma electrolytic oxidation (PEO) process for aluminum 7075 alloy to improve the corrosion and mechanical properties. The electrolyte consists of potassium hydroxide and sodium silicate. Additionally, sodium stannate was added into the electrolyte to investigate its effect on PEO film formation. Titanium was used as the counter electrode. Plasma generation voltage reduced from 300V to 150 V by adding 4 g/L of sodium stannate. The thin oxide films were observed by SEM(Scanning Electron Microscopy)/EDS (Energy Dispersive Spectroscopy) for quantitative and qualitative analyses. XRD (X-ray diffraction) and XRF (X-ray Fluorescences) analyses were also carried out to identify oxide layer on aluminum 7075 surface. Vicker's hardness test was performed on the PEO-treated aluminum 7075 surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.980-983
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• 2002

We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.685-690
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• 2014

Microholographic gratings were prepared on an aluminum oxide ($Al_2O_3$) surface using a 140-fs pulse at a center wavelength of 800 nm. The $Al_2O_3$ was deposited on a silicon wafer and on indium tin oxide glass to a thickness of approximately 25 nm using an atomic layer deposition process. The silicon wafer substrate exhibited reflection-type gratings that were measured as a function of the incidence angle. The diffraction efficiency of the fabricated gratings was measured, with a maximum diffraction efficiency of 45% at an incidence angle of approximately $30^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.981-984
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• 2004

유기 발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)N,N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidineltris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 시간에 따른 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압의 시간에 따른 EL(electro luminance)을 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.77-80
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• 2002

In order to enhence the photocurrent multiplication process, we controlled the irradiation light and the material of cathode layer of organic light emitting diodes (OLEDs). The structures of OLEDs were indium tin oxaide (ITO)/ copper(II) phthalocyanine (CuPc)/triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/ aluminum (Al). We found that OLEDs were changed by the photocurrent and free charge carrier multiplication process due to the irradiation of light. The rate of photocurrent was increased by the irradiation of red and blue light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.128-131
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• 2004

유기발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)/N.N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidine/tris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 전압인가에 따른 반사계수(S11)와 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압에 따른 EL(electro luminance)를 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.494-497
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• 2003

We report the dark spots in organic light emitting diodes by using a near-field scanning microwave microscope. Devices structure was glass / indium-tin-oxide(ITO) / copper-pthalocyiane(Cu-Pc) / tris-(8-hydroquinoline)aluminum(Alq3) / aluminum(Al). We made artificial dark spots by using a etching technique on a ITO substrate. Near-field scanning microwave microscope images and reflective coefficient of dark spots were measured and compared by the change of various applied voltage changes 0-15V.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.691-692
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• 2006

The electromagnetic pump can transfer molten metals by the electromagnetic force of LIM for molten metals, which are zinc, tin and aluminum. The speed and quantity of the flow are analyzed using magnetohydrodynamics. The molten zinc is used in the experiment and the experimental results are compared with the analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.