• 한국세라믹학회지
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• 제40권10호
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• pp.973-980
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• 2003

n-type 반도체인 SnO$_2$ 가스센서에서 첨가제가 산화성 가스에 대한 감지특성에 미치는 영향을 살펴보았다 SnO$_2$ 센서는 환원성 가스에 노출될 경우 전자 주게로 작용하여 저항이 감소하지만, 반대로 산화성 가스에 노출될 경우 전자 받게로 작용하여 저항이 증가하는 특성을 보인다 산화성 가스와 SnO$_2$ 분말 사이의 반응생성물을 가스 크로마토그래피 분석을 통하여 환원성 가스인 알콜의 반응 생성물과 비교하였다. PdC1$_2$혹은 A1$_2$O$_3$가 첨가된 센서는 산화성의 $CH_3$CN와 $CH_3$NO$_2$에 대해 동작온도에 따라 독특한 이중반응특성을 보였다. 이들 센서들의 조합과 패턴인식 기법을 이용하면 전자수용기를 가진 가스들에 대한 선택성을 높일 수 있을 것이다.

• 한국세라믹학회지
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• 제51권4호
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• pp.362-366
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• 2014

Dye-sensitized solar cells (DSSCs) were synthesized using a $0.25cm^2$ area of a $TiO_2$ nanoparticle layer as the electrode and platinum (Pt) as the counter electrode. The $TiO_2$ nanoparticle layers (12 to 22 ${\mu}m$) were screen-printed on fluorine-doped tin oxide glass. Glancing angle X-ray diffraction results indicated that the $TiO_2$ layer is composed of pure anatase with no traces of rutile $TiO_2$. The Pt counter electrode and the ruthenium dye anchored $TiO_2$ electrode were then assembled. The best photovoltaic performance of DSSC, which consists of a $18{\mu}m$ thick $TiO_2$ nanoparticle layer, was observed at a short circuit current density ($J_{sc}$) of $14.68mA{\cdot}cm^{-2}$, an open circuit voltage ($V_{oc}$) of 0.72V, a fill factor (FF) of 63.0%, and an energy conversion efficiency (${\eta}$) of 6.65%. It can be concluded that the electrode thickness is attributed to the energy conversion efficiency of DSSCs.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1217-1223
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(C$_3$ $H_{9}$ $O_3$P, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn $O_2$ added a-Al$_2$ $O_3$ with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7${\times}$10${\times}$0.6㎣. Crystallite size & phase identification and morphology of fabricated Sn $O_2$ powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% $\alpha$-Al$_2$ $O_3$, operating temperature 30$0^{\circ}C$ to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with $\pm$3％ in full scale.TEX>$\pm$3％ in full scale.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.388-394
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• 2008

For purpose of anti-static film remaining unchanged in the condition of $160^{\circ}C$, organic solvent, acid and base solution $0.01\sim0.03{\mu}m$ particles of Sb doped tin oxide(ATO) were grafted by 3-Glycidyloxypropyltrimethoxysilane(GPTS) for improving interfere bonding force between ATO and epoxy resin. The particles were dispersed in 2-methoxyethanol with YD-I28(Bisphenol A type epoxy resin, Kukdo chemical) and 1-imidazole as hardener. The anti-static solutions were coated on PI film as thickness of $0.1{\mu}m$. Surface resistivity of anti-static film containing conductive polymer became $10^{12}\Omega/\Box$ after 32 hours in $160^{\circ}C$. The surface resistivity of ATO grafted by GPTS / Epoxy coating layer remained as $10^{7.6}\Omega/\Box$ in $160^{\circ}C$ for 7 days. ATO grafted by GPTS / Epoxy coating layer coated on PI film was dipped in acetone for 7 days. The surface resistivity remained unchanged as $10^{7.6}\Omega/\Box$. The anti-static layer dipped in water solutions containing each KOH 10 wt % and $H_2SO_4$ 2 wt% was ultra-sonicated for 10 minutes per once until 30th. The surface resistance of anti-static layer containing ATO grafted by GPTS remained unchanged.

• 태양에너지
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• 제20권2호
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• pp.55-65
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• 2000

이온빔 스퍼터링을 이용하여 Indium tin oxide (ITO)박막을 증착하였다. Ar 가스만을 이용하여 플라즈마를 형성한 경우와 $O_2$를 첨가한 경우에 대해 기판온도를 상온에서 $200^{\circ}C$까지 증가시키면서 온도의 영향을 관찰하였으며 이온빔 에너지의 변화가 박막의 특성에 미치는 영향을 관찰하였다. Ar 이온만으로 증착한 ITO 박막은 domain 구조를 보였으며 Ar+$O_2$ 이온으로 증착한 경우 grain 구조를 나타내었다. Ar 이온만으로 증착된 ITO박막의 전기 비저항의 최소값은 $100^{\circ}C$ 기판온도에서 $1.5\times10^{-4}{\Omega}cm$ 값을 보였으며 산소 첨가의 경우에는 $150^{\circ}C$에서 $4.3\times10^{-4}{\Omega}cm$이었다. 모든 박막이 $100^{\circ}C$이상의 기판 온도에서 가시광 영역에서의 투과도는 80%이상의 값을 보였다.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.23-29
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• 2020

Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO₂). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO₂ layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO₂ layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO₂-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO₂) and silicone (Si).

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• 한국재료학회지
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• 제22권11호
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• pp.636-641
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• 2012

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.

• 한국재료학회지
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• 제17권4호
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• pp.227-231
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• 2007

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.