• 제목/요약/키워드: Time-of-flight secondary ion mass spectrometry

검색결과 40건 처리시간 0.039초

Investigation of Polyesters by Time-of-Flight Secondary Ion Mass Spectrometry

  • Lee, Yeonhee;Han, Seunghee;Hercules, David M.
    • 분석과학
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    • 제8권4호
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    • pp.715-722
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    • 1995
  • The structural characterization for series of polyesters has been done by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Polymer fragments and intact oligomers composed of large numbers of repeat units have been investigated. Transesterification of polyesters in trifluoroacetic acid (TFA) and chlorodifluoroacetic acid (CFA) was monitored and reaction products were identified using TOF-SIMS. The shapes and intensities of clusters in transesterification spectra show good agreement with the theoretical isotope pattern. TOF-SIMS spectra were used to obtain information about the progress of the transesterification reaction.

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Boron Detection Technique in Silicon Thin Film Using Dynamic Time of Flight Secondary Ion Mass Spectrometry

  • Hossion, M. Abul;Arora, Brij M.
    • Mass Spectrometry Letters
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    • 제12권1호
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    • pp.26-30
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    • 2021
  • The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

CHARACTERIXATION OF PLASMA ION IMPLANTED SURFACES USING TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMATRY

  • Lee, Yeon-Hee;Han, Seung-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon
    • 한국표면공학회지
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    • 제29권6호
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    • pp.880-883
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    • 1996
  • Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

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비휘발성 기억소자를 위한 NO/$N_2O$ 질화산화막과 재산화 질화산화막의 특성에 관한 연구 (Characteristics of the NO/$N_2O$ Nitrided Oxide and Reoxidized Nitrided Oxide for NVSM)

  • 이상은;서춘원;서광열
    • 한국진공학회지
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    • 제10권3호
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    • pp.328-334
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    • 2001
  • 초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 NO/$N_2$O 질화산화막 및 재산화질화산화막의 특성을 D-SIMS(dynamic secondary ion mass spectrometry), ToF-SIMS(time-of-flight secondary ion mass spectrometry), XPS(x-ray Photoelectron spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2$O 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록 하였다. D-SIMS 분석결과 질소의 중심은 초기산화막 계면에 존재하며 열처리 공정에서 NO에 비해서 $N_2$O의 경우 질소의 분포는 넓게 나타났다. 질화산화막내 존재하는 질소의 상태를 조사하기 위하여 ToF-SIMS 및 XPS 분석을 수행한 결과 SiON, $Si_2$NO의 결합이 주도적이며 D-SIMS에서 조사된 질소의 중심은 SiON 결합에 기인한 것으로 예상된다. 재산화막/실리콘 계면근처에 존재하는 질소는 $Si_2$NO 결합형태로 나타나며 이는 ToF-SIMS로 얻은 SiN 및 $Si_2$NO 결합종의 분포와 일치하였다.

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Surface Mass Imaging Technique for Nano-Surface Analysis

  • Lee, Tae Geol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.113-114
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    • 2013
  • Time-of-flight secondary ion mass spectrometry (TOF-SIMS) imaging is a powerful technique for producing chemical images of small biomolecules (ex. metabolites, lipids, peptides) "as received" because of its high molecular specificity, high surface sensitivity, and submicron spatial resolution. In addition, matrix-assisted laser desorption and ionization time-of-flight (MALDI-TOF) imaging is an essential technique for producing chemical images of large biomolecules (ex. genes and proteins). For this talk, we will show that label-free mass imaging technique can be a platform technology for biomedical studies such as early detection/diagnostics, accurate histologic diagnosis, prediction of clinical outcome, stem cell therapy, biosensors, nanomedicine and drug screening [1-7].

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Chemical Imaging Analysis of the Micropatterns of Proteins and Cells Using Cluster Ion Beam-based Time-of-Flight Secondary Ion Mass Spectrometry and Principal Component Analysis

  • Shon, Hyun Kyong;Son, Jin Gyeong;Lee, Kyung-Bok;Kim, Jinmo;Kim, Myung Soo;Choi, Insung S.;Lee, Tae Geol
    • Bulletin of the Korean Chemical Society
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    • 제34권3호
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    • pp.815-819
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    • 2013
  • Micropatterns of streptavidin and human epidermal carcinoma A431 cells were successfully imaged, as received and without any labeling, using cluster $Au_3{^+}$ ion beam-based time-of-flight secondary ion mass spectrometry (TOF-SIMS) together with a principal component analysis (PCA). Three different analysis ion beams ($Ga^+$, $Au^+$ and $Au_3{^+}$) were compared to obtain label-free TOF-SIMS chemical images of micropatterns of streptavidin, which were subsequently used for generating cell patterns. The image of the total positive ions obtained by the $Au_3{^+}$ primary ion beam corresponded to the actual image of micropatterns of streptavidin, whereas the total positive-ion images by $Ga^+$ or $Au^+$ primary ion beams did not. A PCA of the TOF-SIMS spectra was initially performed to identify characteristic secondary ions of streptavidin. Chemical images of each characteristic ion were reconstructed from the raw data and used in the second PCA run, which resulted in a contrasted - and corrected - image of the micropatterns of streptavidin by the $Ga^+$ and $Au^+$ ion beams. The findings herein suggest that using cluster-ion analysis beams and multivariate data analysis for TOF-SIMS chemical imaging would be an effectual method for producing label-free chemical images of micropatterns of biomolecules, including proteins and cells.