• Journal of the Korean Chemical Society
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• v.48 no.4
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• pp.339-350
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• 2004

The simplified cumulant method was applied to diffraction data of $CClF_3$ to study the equilibrium molecular parameters over a range of temperatures. The molecular parameters of $CClF_3$ by the simplified cumulant method were compared with those from the traditional method. Also the instrumentation of picosecond time resolved electron diffraction (TRED) and the experimental details are described. The total experimental temporal resolution was discussed in terms of the electron pulse width. The TRED system was applied to study the molecular structures for $CClF_3$ at room temperature. The molecular structural parameters $CClF_3$ from TRED are compared with those from GED/RT. The molecular parameters ($r_e$)of bonded C-F and C-Cl for $CClF_3$ by simplified CA are 132.00(2) pm and 175.20(3) pm, respectively, by using GED/RT. From the results of TRED experiments $r_a$ for bonded C-F and C-Cl are 132.23(13) pm and 177.23(19) pm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.85.2-85.2
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• 2016

With the advent of ultra-short high-intense XFEL (X-ray Free Electron Laser), time-resolved dynamics has become of great importance in exploring femtosecond real-world phenomena of nanoscience and biology. These include studying the response of materials to femtosecond laser excitation and investigating the interaction of XFEL itself with condensed matter. A variety of dynamic phenomena have been investigated such as radiation damage, ultrafast melting process, non-equilibrium phase transitions caused by orbital-lattice-spin couplings. As far as bulk materials are concerned, the sample size has no effect on the following dynamic process. As a result, imaging information is not required by and large. If the sample size is of tens of nanometers, however, sample starts to experience quantum confinement effect which, in turn, affects the following dynamic process. Therefore, to understand the fundamental dynamic phenomena in nano-science, time-resolved imaging information is essential. In this talk, we will briefly introduce scientific highlights achieved in XFEL-based dynamics. In case of bio-imaging, recent scientific topics will be mentioned as well. Finally, we will aim to present feasible topics in ultrafast time-resolved imaging and to discuss the future plan of CXI beamline at PAL-XFEL.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.