• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.384-392
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• 2003

The algorithm for calculating the base-collector breakdown voltage of NPN BJT for integrated circuits is proposed. The method of three-dimensional mesh generation to minimize the time required for device simulation is presented and the method for calculating the breakdown voltage using solutions of the Poisson´s equation is presented. To verify the proposed method, the breakdown voltage between base and collector of NPN BJT using 20V process and 30V process is compared with the measured data. The breakdown voltage from the proposed method of NPN BJT using 20V process shows an averaged relative error of 8.0% compared with the measured data and the breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data.

• Journal of the Korea Safety Management & Science
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• v.3 no.4
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• pp.45-52
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• 2001

In order to Investigate water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at 5$0^{\circ}C$~10$0^{\circ}C$, and the water tree property has been correlated with voltage and temperature. The leakage current was increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was decreased and reached to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

• KOREAN JOURNAL OF CROP SCIENCE
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• v.26 no.1
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• pp.103-109
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• 1981

This experiment was carried out to study the influence on the abscission of tobacco green leaves, yields and quality by the application of lime and boras. The results obtained are as follows; 1. The breakdown of tobacco green leaves occurred from 40 to 80 days after transplanting. According to the progress of growing stage, the breakdown leaves advanced to upper leaves in stalk position. 2. The number of breakdown leaves were increased by application of lime and application of borax have a remarkable effect for the control of breakdown leaves. 3. Application of lime were decreased to total-sugar, lignin and borone but borax were increased to borone and lignin content in leaf tobacco at 50 days after transplanting time. 4. It was found that perfective prevention of breakdown leaves could not deped on annual application of borax. 5. The optimum amount of lime and borax were found that lime was 120kg/10a and borax was 1.2kg/10a for the prevention of breakdown leaves, yields and quality.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.4
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• pp.805-810
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• 2011

This paper deals with the method and algorithm used to find fault locations in gas insulated transmission line. The method uses UHF sensors and digital oscilloscope to detect discharge signals emitted to the outside through insulating spacer in the event of breakdown inside GIL. UHF sensors are the external type and installed at outside of insulating spacers of GIL. And we used wavelet signal processing to analyze the discharge signals and confirm the exact fault location findings in the GIL test line. This method can overcome demerit of TDR(Time Domain Reflectometer) method having been applied to detect fault location for conventional underground transmission lines, and Ground Fault Sensors used in conventional GIS systems. TDR method requires high level of specialty and experience in analyzing the measured signals. Ground fault sensors are installed inside GIL and can be destroyed by high transient voltage. This paper's method can simplify the fault location process and minimize the damage of sensors. In addition, this method can estimate the fault location only by the time difference when discharge signals are arrived to detecting sensors at the ends of GIL sections without reasons of breakdown. To test the performance of our method, we installed sensors at the ends of test line of GIL(84m) and sensed discharge signals occurred in GIL, energized with AC voltage generator up to 700kV.

• Progress in Superconductivity and Cryogenics
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• v.7 no.2
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• pp.21-26
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• 2005

Breakdown characteristics and survival probability of turn-to-turn models were investigated under ac and impulse voltage at 77K. For experiments, two test electrode models were fabricated: One is point contact model and the other is surface contact model. Both are made of copper wrapped by O.025mm thick polyimide film(Kapton). The experimental results were analyzed statistically using Weibull distribution in order to examine the wrapping number effects on voltage-time characteristics under ac voltage as well as under impulse voltage in LN$_{2}$. Also survival analysis were performed according to the Kaplan-Meier method. The breakdown voltages of surface contact model are lower than that of point contact model, because the contact area of surface contact model is wider than that of point contact model. Besides, the shape parameter of point contact model is a little bit larger than that of surface contact model. The time to breakdown t$_{50}$ is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.241-244
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• 1991

In this paper, we introduced Silicon Oxynitride films deposited by Laser CVD, and evaluated the electrical breakdown of these films by TZDB(Time Zero Dielectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test. In addition, high frequency C-V test was done in order to calculate hysterisis and flatband voltage(before and after electric field stress). Failure times against eletric field are examined and electric field accelation factor $\beta$ are obtained, and long term reliability was also described by extrapolating into life time in the operating voltage(5V). In this experiments, the deposited films with increased temperature represented small flatband voltage, hysterisis and favorable breakdown characteristics, this is why the hydrogen in the film was decreased and the film was densified, long term reliability was good in the laser CVD SiON films.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.392-396
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• 1987

Pure barium titanate was sintered at $1340^{\circ}C$ for 2, 4, 8, 16 hr to control their grain size. The measurements of breakdown strength and partial discharge characteristics were performed under rising AC voltage(60Hz). With increase of sintering time, the average grain size was increased and breakdown strength was slightly decreased. Partial discharge in pores was observed under high voltage, and a model of dielectric break down in barium titanate ceramics is proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.230-233
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• 1996

In this paper, We intended to evaluate characteristics of XLPE/EPDM interface which exists in the cable joint. Because the fault was mainly occurred in this interface. We investigated breakdown characteristics of XLPE/EPDM double layered insulator as a funtion of temperature, pressure, annealing time, kinds of jointmaterial. It was shown that breakdown strength of XLPE/EPDM insulators is higher that of XLPE/XLPE or EPDM/EPDM

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.44-48
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• 1999

In order to the investigate for the DC(forward-reverse) breakdown properties of gate oxide in MOSFET, we are manufactured the specimen as following. The resistivity is 1.2($\Omega$ $.$ cm), 1.5($\Omega$ $.$ cm) and 1.8($\Omega$ $.$ cm) when thickness is 600(${\AA}$), and the diffusion time is both 110[min] and 150[min] when thickness is 600[${\AA}$]. In DC dielectric strength due to the each resistivity, it is confirmed that almost of the leakage current and breakdown current is flowed through n+ source when positive bias is applied, but is flowed through P region when negative bias is applied. It is thought that the dielectric strength due to the diffusion time is the contribution as increasing of p region.