• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.194-196
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• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1102-1107
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• 1993

Microwave dielectric properties of CaTiO3 and CaTiO3-TiO2 ceramics for the composition range between 40 and 50 mol% CaO in CaO-TiO2 binary system were investigated. CaTiO3 ceramics with50 mol% CaO showed the dielectric constant (e,) of 178, the temperature coefficient of resonant frequency(c,) of+1000 ppm/'c and the qualify factor Q of 2760 (f0=2.7 GHz ). Dielectric constant and temperature coefficient of resonant frequency of ceramics with dual phases of CaTiO3 and TiO2 decreased gradually from those of CaTiO3 as the CaO content decreased. Q value and density were found to have minimum at the composition of 47 mol% CaO. The degradation of Q value and density in dual phase ceramics seems to be caused by the large pores at grain boundaries and/or within grains remained after rapid growth of CaTiO3 grains as TiO2 Phase decreased.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.344-348
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• 2006

The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.58-60
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• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.45-51
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• 1986

$SrTiO_3$ reaction mechanism formed from $TiCl_4$ and $SrCl_2$ solution by direct-wet-process was studied. Through this study it is identified that crystalline $SrTiO_3$ is formed above pH 13.8 amorphous $SrTiO_3$ above pH7 and crystallization temperature of amorphous $SrTiO_3$ is at 37$0^{\circ}C$. the final products are composed of 60% crystalline $SrTiO_3$ and 40% amorphous $SrTiO_3$ The amorphous $SrTiO_3$ is identified with the IR absorption spectrum of Sr-Ti-O by FT-IR spectrometer. Under pH 7 gelationus metatitanate (H2TiO3) is formed from TiCl4 but above pH7 the activity by the formation of metatitnic acid ion $[TiO_3]^{2-}$ is so high that $SrTiO_3$is formed more easily through the reaction with $Sr^{2+}$.

• The Journal of Natural Sciences
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• v.8 no.1
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• pp.61-69
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• 1995

It is hard to synthesize pure $BaTiO_3$ from $BaCO_3$ and $TiO_2$ in solid reaction for the activity of BaO and secondary phase. For this reason, the wet chemical techniques have been studied. Starting material which was used in these methods were expensive and the properties of powder which was synthesized in same defined. So, some process have been studying again to improve soild reaction method. This study which was one of those was to defin the forming mechanism of $Ba_2TiO_4$ and to control some condition of $Ba_2TiO_4$. The synthesis temperature of $BaTiO_3$ in solid reaction was near $1120^{\circ}C$. The quantity and forming temperature of $Ba_2TiO_4$ could be controlled by atmosphere heat treatment. $Ba_2TiO_4$ was related to expansion in Ba-rich region of $BaTiO_3$. $BaTiO_2O_5$ and $BaTiO_3O_7$ was reason to expand in Ti-rich region. The dielectrics of $CeAIO_3$ which was synthesized and sintered in reduction atmosphere and $BaTiO_3$ system were affected by $CeO_2$ which was formed for the decomposition of $CeAIO_3$ heat treatment in air.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.484-490
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• 1987

Diffusion coupling experiment was done to study expansion of body and soild reaction in BaCO3-TiO2 system. Specimen of BaCO3 and TiO2 was formed with Pt-mark's method. Each specimen was fired at interval of 25℃ from 900℃ to 1000℃ for 2hrs. After that, specimen was fixed with resin and polished. Product layers of specimen were observed with SEM and EDS. The result were following; 1. Diffusion component is Ba2+, which diffuse toward TiO2. 2. Large crack between layer of BaCO3 and Ba2TiO4 was generated because of difference of thermal expansion coefficient. 3. Ba2TiO4 is formed to TiO2 body by the reaction of BaTiO3 and BaO and its structure is very porous. 4. BaTiO3 changes immediately to Ba2TiO4 by the reaction of BaO. But BaTiO3 which formed by the reaction of TiO2 and Ba2TiO4 exsists as layer because the diffusion distance of Ba2+ is far.

• Journal of the Korean Chemical Society
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• v.38 no.4
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• pp.309-318
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• 1994

The stable defect structure and the single phase region of La$_2O_3$-modified BaTi$O_3$ have been studied by X-ray diffractometer and scanning electron microscope. The stable defect structure of La$_2O_3$-modified BaTi$O_3$ has been identified as [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$ which consists of La$^{3+}$ ion substitution for Ba$^{3+}$ ion in the lattice structure and the formation of Ti vacancies for the charge compensation. When 3 mol% of La$_2O_3{\cdot}3/2TiO_3$ was added to BaTi$O_3$, the unit cell structure was transformed from tetragonal to cubic and the solubility limit was about 14 mol%. When La$_2O_3{\cdot}3/2TiO_2$ was added above this solubility limit, the second phase, La$_4Ba_2Ti_5O_{18}$, was formed. In the La$_2O_3$-modified BaTi$O_3$, it was found by the liquid phase sintering process that the sinterability was decreased by excess BaO but increased by excess Ti$O_2$.