• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.26-27
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties were investigated for selective electroless nickel plating of Si farers in order to obtain an optimum condition of contact hole filling. According to RCA prosess, p-type si 1 icon (100) surface was cleaned out and activated. The effects of temperture, DMAB concentration, time, and stirring iwere investigated for activation of p-type Si(100) surface. The optimal activation condition obtained was 0.5M HF, 1mM PdCl$_2$, 2mM EDTA, 7$0^{\circ}C$, 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentration, pH, and plating ti me were studied. The optimal plating condition found was 0. 10M NiS0$_4$.$H_2O$, 0.lIM Citrate, pH 6.8, 6$0^{\circ}C$, 30 minutes. The contact resistence of fi]ms wascomparatively low. It took 30 minutes to obtain 1$\mu$m thick film with 8$\mu$M DMAB concentration. The film surface roughness was improved with increasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained with the condition of temperature 6$0^{\circ}C$ and pH 6.8. The micro-victors hardness of film was about 600Hv and was decreased wi th increasing particle size of plating layer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• Transactions of the Korean Society of Automotive Engineers
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• v.22 no.4
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• pp.111-120
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• 2014

The aim of this study is to develop an integrated urea-SCR catalytic filter system for reducing soot and $NO_X$ emissions simultaneously in diesel engines. In this study, the characteristics of exhaust emissions relative to reactive activation temperature under four kinds of engine loads are experimentally investigated by using a four-cycle, four-cylinder, direct injection type, water-cooled turbo intercooler ECU common-rail diesel engine with the integrated urea-SCR $MnO_2-V_2O_5-WO_3/TiO_2/SiC$ catalytic filter system operating at three kinds of engine speeds. The urea-SCR reactor is used to reduce $NO_X$ emissions, and the catalytic filter system is used to reduce soot emissions. The reactive activation temperature is very important for reacting a reducing agent with exhaust emissions. The reactive activation temperatures in this experiment is applied to 523, 573 and 623 K. The fuel is sprayed by the pilot and main injections at the variable injection timing between BTDC $15^{\circ}$ and ATDC $1^{\circ}$ according to experimental conditions. It is found that the $NO_X$ conversion rate is the highest as 83.9% at the reactive activation temperature of 523 K in all experimental conditions of engine speed and load, and the soot emissions shown by the average reduction rate of approximately 93.3% are almost decreased below 0.6% in all experimental conditions regardless of reactive activation temperatures. Also, the THC and CO emissions by oxidation reaction of Mn, V and Ti are shown in the average reduction rates of 70.3% and 38% regardless of all experimental conditions.

• Membrane Journal
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• v.21 no.2
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• pp.201-211
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• 2011

The effects of humic acid (HA), photo-oxidation and adsorption were investigated in hybrid process of ceramic ultrafiltration and photocatalyst for drinking water treatment. UF, photocatalyst, and UV radiation processes were investigated in viewpoints of membrane fouling resistance $(R_f)$, permeate flux (J), and total penneate volume $(V_{\Upsilon})$ at 2 and 4 mg/L of HA respectively. As decreasing HA, $R_f$ decreased dramatically and J increased, and finally $V_{\Upsilon}$ was the highest at 2 mg/L HA. Average treatment efficiencies of turbidity decreased as increasing HA, but treatment efficiency of HA was the highest at 4 mg/L HA. It was because most of HA was removed by membrane and some HA passing through the membrane was adsorbed or photo-oxidized by photocatalyst at low HA, and therefore treated water quality was almost same at 2 and 4 mg/L HA, but feed water quality was higher at 4 mg/L. At effect experiment of photo-oxidation and adsorption, J of UF + $TiO_2$ + UV process was maintained at the highest, and ultimately $(V_{\Upsilon})$ after 180 minutes' operation was the highest. As results of comparing the treatment efficiencies of turbidity and HA, photocatalyst adsorption had more important role than photo-oxidation when HA increased from 2 to 4 mg/L.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.255-255
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• 2015

국제핵융합실험로(ITER)의 3대 목표 중 하나는 핵융합로 개발을 위한 삼중수소증식블랑켓 개념을 시험하고 검증하는 것이며, 이를 위해 시험증식블랑켓(TBM, Test Blanket Module) 프로그램을 마련, 각국이 참여할 수 있도록 하고 있다. 한국도 2012년 국가핵융합위원회 결정에 따라, EU, 일본, 중국, 인도와 함께 TBM 프로그램에 참여하고 있으며, 2021년 설치를 목표로 헬륨냉각 고체증식재 개념의 HCCR (Helilum Cooled Ceramic Reflector) TBM을 설계, 개발하고 있다. 한국형 TBM은 총 4개의 서브모듈과 하나의 후벽(Back Manifold, BM) 으로 구성되며, 각 서브모듈은 플라즈마와 대면하는 일차벽(First Wall, FW), 증식재와 증배재, 반사재를 담고 있는 증식영역(Breeding Zong, BZ), 냉각재 매니폴드 및 구조물 역할을 하는 측벽(Side Wall, SW) 등의 기능부품으로 구성되어 있다. 냉각재는 8 MPa, $300-500^{\circ}C$의 고온고압헬륨을 사용하고, Li2SiO4 혹은 Li2TiO4 형태의 Li 세라믹 증식재를 사용하며, 중성자 증배를 위해 Be 증배재 및 흑연 반사재를 사용한다 [1-3]. 2015년 2월 개념설계검토(CDR, Conceptual Design Review)를 위해, TBM-shield를 포함한 TBM-set 설계가 완료되었으며, 열수력, 구조, 지진, 전자기, 복합하중에 대한 평가가 진행되었다. 본 논문에서는 이 중 H/He-phase에 시험될 EM-TBM과 D-T phase에 시험될 INT-TBM에 대한 열수력 성능 결과를 소개하였다[5]. 각각의 열부하 조건은 0.17과 $0.3MW/m^2$이며, 중성자 조사는 D-T phase 에서만 고려되었다. 구조재 및 사용된 기능소재별 온도 요건을 정의하고, 성능해석 결과와 비교하였으며, 이를 통해 모든 온도 요건을 만족함을 최종 확인하였다. 이러한 온도 분포는 열응력 평가를 위해 구조해석 입력자료로 활용되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.228-228
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• 2010

본 연구에서는 공진주파수 수식을 이용한 MATLAB과 Modal 해석법을 사용한 ANSYS로 공진주파수 특성을 시뮬레이션 하였다. 외팔보의 시뮬레이션 결과에서는 길이가 길어짐에 따라, 또는 proof mass의 크기가 커짐에따라 공진주파수 특성이 낮아지는 결과가 나타났다. 따라서 본 실험에서의 외팔보는 낮은 공진 주파수를 가지기 위해 Si proof mass를 사용하여 제작하였다. 외팔보 소자는 Silicon-on-insulator wafer를 사용하여 SiO2/Ti/Pt/PZT/Pt 박막을 증착하였고, 마스크를 사용한 식각 공정으로 제작하였다. 이때의 MATLAB, ANSYS 시뮬레이션 결과와 실험에서 제작된 소자는 유사한 공진주파수 특성을 나타내었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.101-107
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• 1995

To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1229-1231
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• 1997

In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.