• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1480-1484
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• 2012

We report a series of novel imidazolium iodides based ionic liquids (NMIPHI, NAIPHI, and NBIPHI) with different functional groups for the development of a quasi-solid type electrolyte for dye-sensitized solar cells (DSSCs). The diffusion coefficients of redox ions ($I^-$ and $I_3{^-}$) are dependent on the molecular weight and it was higher for lighter salts. Among the three ionic liquids, NMIPHI showed highest efficiency of 4.18% when it was used in a liquid electrolyte of a DSSC with $ca$. 6 ${\mu}m$ thick $TiO_2$ mesoporous film. Even though the efficiency was $ca$. 19% lower than that obtained from a liquid electrolyte composed of PMII. When NMIPHI was mixed with PMII with a molar ratio of 1:1 in a solvent free electrolyte, the efficiency of the DSSCs was enhanced compared to that based on pristine PMII.

• Coupled systems mechanics
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• v.1 no.2
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• pp.205-217
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• 2012

A smart beam made of magneto-electro-elastic (MEE) material having piezoelectric phase and piezomagnetic phase, shows the coupling between magnetic, electric, thermal and mechanical under thermal environment. Product properties such as pyroelectric and pyromagnetic are generated in this MEE material under thermal environment. Recently studies have been published on the product properties (pyroelectric and pyromagnetic) for magneto-electro-thermo-elastic smart composite. Hence, the magneto-electro-elastic beam with different volume fractions, investigated under uniform temperature rise is the main aim of this paper, to study the influence of product properties on clamped-free boundary condition, using finite element procedures. The finite element beam is modeled using eight node 3D brick element with five nodal degrees of freedom viz. displacements in the x, y and z directions and electric and magnetic potentials. It is found that a significant increase in electric potential observed at volume fraction of $BaTiO_3$, $v_f$ = 0.2 due to pyroelectric effect. In-contrast, the displacements and stresses are not much affected.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.988-991
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• 2004

In the present investigation, we tried AR coating simulation by using the "Essential Macleod optical coating design and analysis" program. After various run of the program we selected appropriate materials which have specific refractive indices and for that thickness was optimized to get the low reflectance. By comparing the simulated results for the different materials,we found that $SiO_2$ and TiN are the appropriate materials for this Flat panel device (FPD) application. Thin films of these materials were deposited using RF magnetron sputtering and Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD) methods on Polyethyleneterephthalate (PET) substrates. Spectroscopic ellipsometer (SE MF-1000) and UV-Vis spectrophotometer (SCINCO) were used for the optical characterization. The obtained experimental results are in good agreement with the simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.152-156
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• 2017

In this paper, $Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ ceramics were fabricated by the conventional solid state method to obtain excellent dielectric properties for ultrasonic generators. The effects of 2nd calcination temperature on their microstructure and piezoelectric properties were systematically investigated. The tetragonality increased in the ceramics when 2nd calcination temperature increased to the optimized temperature at $750^{\circ}C$. At that temperature, excellent physical properties ($d_{33}=352\;pC/N$, ${\varepsilon}_r=1,687$, $k_p=0.570$, $Q_m=1,640$) were obtained for ultrasonic generator application.

• Proceedings of the KAIS Fall Conference
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• 2011.05b
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• pp.836-839
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• 2011

염료감응형 태양전지의 상대전극으로 MWCNT(multi-walled carbon nanotube)의 농도 (0.01~0.06g)를 달리하여 FTO(fluorine-doped tin oxide) glass에 분산시켜 상대전극을 만들었다. 그리고 glass/FTO/$TiO_2$/Dye(N719)/electrolyte(C6DMII,GSCN)/MWCNT/FTO/glass 구조를 가진 0.45$cm^2$급 DSSC(dye-sensitized solar cells) 소자를 만들었다. 소자의 미세구조, 분산정도, 광특성은 각각 광학현미경, SEM, source measure unit (Keithley model 2400) 장비를 이용하여 확인하였다. MWCNT 농도 증가와 FTO의 거친 표면형상에 따라 비선형적으로 MWCNT 분산면적이 증가하였고, MWCNT 농도 0.06g일 때 FTO 표면에 전체적으로 MWCNT가 완전히 분산됨을 확인하였다. 소자의 광변환 효율은 MWCNT 분산면적에 비례하는 효율을 보였고, MWCNT 분산농도인 0.06g 일 때 4.49%의 광변환 효율을 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.20-25
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• 2001

To develop the piezoelectric actuator, the structural, dielectric and piezoelectric properties and electric fieldinduced strain of the ceramics(Pb$\_$1-2/Ba$\_$x/)[Mg$\_$1/2/W$\_$1/2/)$\_$0.03/-Ni$\_$1/3/Nb$\_$2/3/)$\_$0.12/-(Zr$\_$0.5/Ti$\_$0.5/)$\_$0.85/]O$_3$(x=0, 0.01, 0.03, 0.05, 0.07, 0.1) were investigated with the substitution of Ba. The tetragonality of crystal structure and grain size decreased by the substitution of Ba. Curie temperature decreased due to the decrease of the tetragonality, and dielectric constants increased with the substitution of Ba. The coercive field, remnant polarization and electromechanical coupling factor also decreased, whereas the piezoelectric constatns d$\_$33/ and d$\_$31/ were showed the highest value of 430 and 209(x10$\^$-12/C/N), respectively, because of the increase of dielectric constant. The strain induced by 60Hz AC electric field had the maximum value of 204x10$\^$-6/Δℓ/ℓ at the substitution of Ba 3mol%. As the applied electric field approaches to the coercive field, the piezoelectric element is depolarized and the electric field induced strain revealed non-linearity.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.220-224
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• 2009

The effect of addition of single and binary additives on the performance of dye-sensitized $TiO_2$ solar cells based on 1,2-dimethyl-3-propylimidazolium iodide (DMPII) in ethylene carbonate (EC) and gamma-butyrolactone (GBL) has been evaluated at different cell temperatures in the $30-120^{\circ}C$ range. The electrolyte containing a single additive, 2-(dimethylamino)-pyridine (DMAP) showed best performance, which showed further enhancement for an electrolyte containing binary additives, DMAP and 5-chloro-1-ethyl-2-methylimidazole (CEMI) in equal molar ratio. The performance of the dye sensitized solar cell (DSC) based on electrolyte containing binary additives were found to be better than an acetonitrile based electrolyte. The dependence of different photovoltaic parameters (Voc, Jsc, ff, n) of the DSC upon temperature has been studied over the $30-120^{\circ}C$ range and only a small decrease in conversion efficiency has been observed. Thus the electrolyte containing binary additives (DMAP, CEMI) in EC/GBL solvent and show better performance in the investigated temperature range ($30-120^{\circ}C$).