• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.432-437
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• 2012

Electrical properties of the laminated SMD-type PTC thermistor for microcircuit protection were investigated as a function of calcination and sintering temperature. $BaTiO_3$ with $Y_2O_3$ and $MnO_2$ were calcined at 1000 to $1150^{\circ}C$ for 2h and the laminated SMD-type PTC thermistor was sintered at 1350 to $1400^{\circ}C$ for 2h in a reduced atmosphere (1% $H_2/N_2$). Sintered density of the sample was dependent on the calcination and sintering temperature. Electrical properties of the sintered samples were strongly dependent on the densities of samples. For the samples with density below 4.6 g/$cm^3$, the insulator characteristics were observed, while PTC jump characteristics (R150/R30) were disappeared for the sample with density above 5.05 g/$m^3$. Optimal PTC characteristics were obtained for the sintered samples with density of 5.05 g/$m^3$. The laminated SMD-type PTC thermistor prepared by calcination at $1100^{\circ}C$ for 2h and sintering at $1270^{\circ}C$ for 2h showed the room temperature resistivity of $11{\Omega}{\cdot}cm$ and PTC jump characteristics of $10^2$ order.

• Macromolecular Research
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• v.8 no.5
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• pp.238-242
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• 2000

The new trisiloxane-bridged heterometallic dinuclear metallocenes, hexamethyltrisiloxanediyl(cyclopentadienyltitanium trichloride) (cyclopentadienylindenyl zirconium dichloride) , $C_3ITi-Cp(CH_3)_2Si-O-Si(CH_3)_2-O-Si(CH_3)_2-Cp-ZrIndCI_2$ (1) and hexamethyltrisiloxanediyl (cyclopentadienylindenylhafnium dichloride) (cyclopentadienylindenyl zirconium dichloride), $C_2IndHf-Cp(CH_3)_2Si-O-Si(CH_3)_2-Cp-ZrIndCl_2$ 2) connecting two dissimilar metallocenes were synthesized and used for ethylene polymerization in the presence of modified methylaluminoxane (MMAO) cocatalyst. The catalytic activity of heterometallic dinuclear metallocenes, 1 and 2 was lower than that of corresponding mononuclear metal-locene as well as two physically mixed catalysts, $CpTiCl_2/Cp_2ZrCl_2 and Cp_2HfCl_2/Cp_2ZrCl_2$. On the tither hand, MWD of PE obtained with 1 and 2 was remarkably broader ($M_w/M_n$) became up to 9.4) than those of PEs prepared with the corresponding mononuclear metallocenes and mixed catalysts. With analysis by GPC and CFC, it was found that PE produced by the heterometallic dinuclear metallocenes exhibited the definite bimodal GPC curves that should cause the broadening of MWD.

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.687-693
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• 2004

Composite membranes with a titania layer were prepared by soaking-rolling method with the titania sol of nanoparticles formed in the sol-gel process and investigated regarding the vapor permeation of various organic mixtures. The support modification was conducted by pressing $SiO_2$ xerogel of 500 nm in particle size under 10 MPa on the surface of a porous stainless steel (SUS) substrate and designed the multi-layered structure by coating the intermediate layer of ${\gamma}-Al_2O_3$. Microstructure of titania membrane was affected by heat-treatment and synthesis conditions of precursor sol, and titania formed at calcination temperature of 300$^{\circ}C$ with sol of [$H^+$]/[TIP]=0.3 possessed surface area of 210 $m^2$/g, average pore size of 1.25 nm. The titania composite membrane showed high $H_2/N_2$ selectivity and water/ethanol selectivity as 25-30 and 50-100, respectively. As a result of vapor permeation for water-alcohol and alcohol-alcohol mixture, titania composite membrane showed water-permselective and molecular-sieve permeation behavior. However, water/methanol selectivity of the membrane was very low because of chemical affinity of permeants for the membrane by similar physicochemical properties of water and methanol.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.458-463
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• 2003

In order to develope piezoelectric transformer for the ballast of fluorescent lamp, a new shape and electrode pattern of piezoelectric transformer has been investigated in this work. The composition of piezoelectric ceramics was 0.95Pb(Zr$_{0.51}$Ti$_{0.49}$)O$_3$+0.03Pb(Mn$_{1}$3/Nb$_{2}$3/)O$_3$+0.02Pb(Sb$_{1}$2/Nb$_{1}$2/)O$_3$. The sample prepared by this composition system showed the characteristics which has about 1200 of relative dielecric constant, 1100 of the mechanical quality factor, 0.53 of the electromechanical coupling coefficient, 320 pC/N of the piezoelectric constant d$_{33}$, 0.3 % of the dissipation factor. Diameter and thickness of disk-type piezoelectric transformer was 45 mm and 4 mm, respectively. The driving and generating electrode with their gap of 1mm were fabricated on the top surface. But the common electrode was fabricated on the whole bottom surface. The electrode surface ratio of driving and generating part on the top surface ranges from 1.4:1 to 3:1. We investigated the electrical characteristics with the variation of the electrode surface ratio of driving and generating part in the range of load resistance of 100 $\Omega$～70 k$\Omega$. The set-up voltage ratio of this piezoelectric transformer increases with increasing both the electrode surface of driving part and the load resistance. The set-up voltage ratio at no load resistance was more than 60 times. On the other hand, the efficiency decreases with increasing the electrode surface of driving part. In the case of the electrode surface of both 1.4:1 and 2:1, maximum efficiency showed above 97 % at load resistance of 2 k$\Omega$. However, in the case of the electrode surface of 3:1, maximum efficiency showed about 94 % at load resistance of 3 k$\Omega$.>.>.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.111-115
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• 2003

200nm 정도의 두께를 가진 SBT 박막이 liquid delivery MOCVD 공정에 의해 (111) oriented Pt/Ti/$SiO_2$/Si 기판 위에 증착되었다 이 실험에서는 $Sr(TMHD)_2$tetraglyme, $Bi(ph)_3$ 그리고 $Ta(O^iPr)_4$(TMHD)를 출발 물질로 사용하였다. Sr 출발 물질의 열적 안정화를 위해서 adduct로 tetraglyme를 사용하여 실험하였고 유기 용매로는 n-butyl acetate를 사용하였다 Substrate temperature와 reactor pressure는 각각 $570^{\circ}C$와 5Torr로 유지시켰다. 또한 vaporizer의 용도는 $190-200^{\circ}C$, 그리고 delivery line 의 온도는 vaporizer 보다 높게 유지 $(220-230^{\circ}C)$하여 출발 용액을 분당 0.1ml로 50분간 주입하였다. 수송가스로 Ar, 산화제로 $O_2$ 가스를 사용하였다. 제조한 SBT 박막은 $750^{\circ}C$에서 열처리한 후 인가전압 3V와 5V에서 $2P_r$값이 각각 6.47, $8.98{\mu}C/cm^2$이었으며, $2E_c$값은 인가전압 3V와 5V에서 각각 2.05, 2.31V이었다 그리고 $800^{\circ}C$에서는$750^{\circ}C$에서 열처리한 SBT 박막보다 다소 우수한 이력특성을 나타내어 $2P_r$ 값은 인가전압 3V와 5V에서 각각 7.59, $10.18{\mu}C/cm^2$ 이었으며, $2E_c$값은 인가 전압 3V와 5V에서 각각 2.00, 2.21V 이었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.