• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.5-8
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1546-1548
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/ $SiO_2$/Si) using RF magnetron sputtering method. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The dielectric constant is 213 at annealing temperature of 750[$^{\circ}C$] and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8}A/cm^2$ at annealing temperature of 750[$^{\circ}C$].

• 센서학회지
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• 제13권2호
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• pp.85-89
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• 2004

This paper represents the development of high sensitivity photo-sensor for the fluorescence detection in the integrated biological analysis system. The finger-type PIN photodiodes were fabricated as the photo-sensor, and had a high sensitivity ($I_{light}/I_{dark}$ = 8720). The interference filter consisted of $TiO_{2}$ and $SiO_{2}$ was directly deposited on the photodiodes. Deposited filter with 95.5% reflection under 532 nm and 98% transmission over 580 nm exceedingly decreased the magnitude of background signal in the detection. The PDMS micro-fluidic channels are bonded on the photodiode by $O_{2}$ plasma treatment. The detection current was proportional to two primary parameters (light intensity, concentration), and the on-chip detection system could detect fluorescence signals down to 100 nM concentration (LOD = Limit of detection of rhodamine).

• 한국응용과학기술학회지
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• 제20권2호
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• pp.148-153
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• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.206-210
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• 1997

In the fields of the optics, precise machine, semiconductors, the micro-positioning actuators are required for the control of position in the submicron range. PNN-P2N-PZT ceramics were fabricated with various mole ratio of the PZT[Pb(Zr$_{1}$2//Ti$_{1}$2)O$_3$]. PNN (Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$]and PZN[Pb(Zn$_{1}$3//Nb/sbu 2/3/)O$_3$] powders prepared by double calcination and PZT powders prepared by molten- salt synthesis method. The relative permittivity of specimen with PZT 0.3 mole ratio was shown 5,320 and appeared the relaxor ferroelectric feature. The maximum Piezoelectric coefficient d$_{31}$ to be used for evaluation the displacement of piezoceramics in PNN-PZN-PZT ceramics was 324$\times$10$^{-12}$ (C/V) at the vicinity of morphotropic phase boundary and was larger than that of solid PZT ceramics(120$\times$10$^{-12}$ C/V).

• 자원환경지질
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• 제31권3호
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• pp.249-264
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• 1998

The Creataceous volcanic rocks distributed in the southeastern part (Kyeongsang basin) of Korea peninsula are composed of basalt, basaltic andesite, andesite, dacite and rhyolite. The variation of major elements show that contents of MgO, CaO, $FeO^T$, $Al_2O_3$, $TiO_2$ and $P_2O_5$ decrease with increasing of $SiO_2$, but $K_2O$ contents are increased slightly, $Na_2O$ widely dispersed. We can show slightly inflection point and low frequency of dacites in range between 63-65 wt.% $SiO_2$, while continuous trend exit in variation diagram. Variation trends in Harker diagrams for the major, minor, trace and REEs suggest that the BAV (basaltic to andesitic volcanics) and DRV (dacitic to rhyolitic volcanics) are not related to a simple crystal fractionation process. In the regime of under 65 wt. % in silica content, fractionation of olivine and clinopyroxene is predominant, while that of plagioclase happens strongly higher than 65 wt.% (e.g., $SiO_2$, vs. Eu and Sr, MgO vs. $Al_2O_3$ and CaO). The latter means low-pressure fractional crystallization for DRV. On the discriminant diagram, DRV are located in more mature environment than BAV. The $(Ce/Sm)_N$ vs. CeN digram shows that these two classes cannot be related to crystal fractionation. If they had been produced by fractionation, although they plotted in a slightly elongate cluster along the same horizontal trend, DRV should lie to the right of these primitive compositions. These diagrams clearly rule out a simple fractionation throughout from BAV to DRV. BAV had been influenced greatly subductiong slab as shown by K/Yb vs. Ta/Yb. We suggest that BAV primitive magma generated higher degree of partial melting than DRV primitive magma. LILE (K, Ba, $Rb{\pm}Th$) enriched characteristics as shown in BAV are inherited from subducting slab fluids and/or higher degree of partial melting of mantle material. However, lower degree of partial melting of mantle relative to BA V and contamination at high-level magma reservoir caused LILE enrichment to DRV.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.258-258
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• 2016

최근 디스플레이 산업의 발전에 따라 고성능 디스플레이가 요구되며, 디스플레이의 백플레인 (backplane) TFT (thin film transistor) 구동속도를 증가시키기 위한 연구가 활발히 진행되고 있다. 트랜지스터의 구동속도를 증가시키기 위해 높은 이동도는 중요한 요소 중 하나이다. 그러나, 기존 백플레인 TFT에 주로 사용된 amorphous silicon (a-Si)은 대면적화가 용이하며 가격이 저렴하지만, 이동도가 낮다는 (< $1cm2/V{\cdot}s$) 단점이 있다. 따라서 전기적 특성이 우수한 산화물 반도체가 기존의 a-Si의 대체 물질로써 각광받고 있다. 산화물 반도체는 비정질 상태임에도 불구하고 a-Si에 비해 이동도 (> $10cm2/V{\cdot}s$)가 높고, 가시광 영역에서 투명하며 저온에서 공정이 가능하다는 장점이 있다. 하지만, 차세대 디스플레이 백플레인에서는 더 높은 이동도 (> $30cm2/V{\cdot}s$)를 가지는 TFT가 요구된다. 따라서, 본 연구에서는 차세대 디스플레이에서 요구되는 높은 이동도를 갖는 TFT를 제작하기 위하여, amorphous In-Ga-Zn-O (a-IGZO) 채널하부에 화학적으로 안정하고 전도성이 뛰어난 SnO2 채널을 얇게 형성하여 TFT를 제작하였다. 표준 RCA 세정을 통하여 p-type Si 기판을 세정한 후, 열산화 공정을 거쳐서 두께 100 nm의 SiO2 게이트 절연막을 형성하였다. 본 연구에서 제안된 적층된 채널을 형성하기 위하여 5 nm 두계의 SnO2 층을 RF 스퍼터를 이용하여 증착하였으며, 순차적으로 a-IGZO 층을 65 nm의 두께로 증착하였다. 그 후, 소스/드레인 영역은 e-beam evaporator를 이용하여 Ti와 Al을 각각 5 nm와 120 nm의 두께로 증착하였다. 후속 열처리는 퍼니스로 N2 분위기에서 $600^{\circ}C$의 온도로 30 분 동안 실시하였다. 제작된 소자에 대하여 TFT의 전달 및 출력 특성을 비교한 결과, SnO2 층을 형성한 TFT에서 더 뛰어난 전달 및 출력 특성을 나타내었으며 이동도는 $8.7cm2/V{\cdot}s$에서 $70cm2/V{\cdot}s$로 크게 향상되는 것을 확인하였다. 결과적으로, 채널층 하부에 SnO2 층을 형성하는 방법은 추후 높은 이동도를 요구하는 디스플레이 백플레인 TFT 제작에 적용이 가능할 것으로 기대된다.

• 센서학회지
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• 제16권2호
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• pp.120-125
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• 2007

The effect of $MnO_{2}$ as a sintering additive on the microstructures and the piezoelectric properties, especially mechanical quality factor, of 0.05 Pb$(Sb_{0.5}Nb_{0.5})O_{3}$-0.95 Pb$(Zr_{0.52}Ti_{0.48})O_{3}$ (PSN-PZT) piezoelectric ceramics was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the sample were examined using XRD and FE-SEM, respectively. A study on the influence of $MnO_{2}$ additives on the dielectric and piezoelectric properties showed that the $MnO_{2}$-added PSN-PZT system exhibited a high mechanical quality factor and well-situated piezoelectric properties. The optimized results of $d_{33}$ (319 pC/N), $k_{p}$ (55 %), and $Q_{m}$ (751.24) were obtained at 0.2 wt% $MnO_{2}$ added PSN-PZT piezoelectrics.