• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.119-120
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• 2011

Kawazoe는 1997년 p-type TOS를 만들기 위해서는 3가지가 충족되어야 한다고 언급한바 있다. 첫 번째, 가시광영역에서 투명하기 위해서 cation의 d10s0이 가득 차야 한다. 가득 차지 않은 d10 shell은 광 흡수가 가능하여 투과도를 떨어뜨린다. N-type을 예로 들어 ZnO, TiO, In2O3가 각각 Zn2+, Ti4+, In3+가 되어 d shell을 가득 차게 만드는 것을 볼 수 있다. 두 번째, cation d10s0 shell은 산소의 2p shell과 overlap 되어야 한다. 이 valence band는 홀 전도를 더욱 좋게 한다. 예를 들어 Cu1+(3d), Ag1+(4d)가 해당한다. 세 번째로, 양이온과 산소간의 공유결합을 강하게 하기 위해서 결정학적 구조는 매우 중요하다. Delafossite 구조는 산소가 pseudo-tetrahedral 구조로서 공유결합에 유리하다. 이러한 환경은 O2- (2p6)을 형성하고 홀의 이동도를 증가시킨다. 예를 들어 Cu2O의 경우 앞의 2가지를 만족시키지만 광학적 특성에서 좋지 않다. 그 이유가 3번째 언급한 결정학적인 요인에 있다. 결정 계의 환경은 Cu2O를 따라가면서 3차원적인 연결을 2차원적으로 변형된 delafossite 구조에서는 quantum well이 형성되어 band gap이 커진다. 본 연구에서는 전기적 이방성을 가지고 있는 delafossite CuCrO2 상에서 우선배향을 일으키는 인자 중 기판을 변화시켜 실험을 진행하였다. 결과적으로 기판변화를 통해 우선배향조절이 가능하였으며 CuCrO2 박막을 시켰으며, 결정방향에 따른 전기적 물성의 이방성에 관한 연구는 계속 진행 중에 있다. c-plane sapphire 기판위에는 [00l]로 성장하는 반면, c-plane STO 기판 위에는 [015] 방향으로 성장하는 것을 확인하였다. 이러한 원인은 기판과 증착되는 박막간의 mismatch를 최소화 하여 strain을 줄이고, 계면에서의 Broken boning 수를 줄여 계면에너지를 낮추는 방법이기 때문일 것으로 예상된다. C-plane sapphire 기판위에 증착될 경우 증착온도가 증가함에 따라 c-축으로의 성장이 온전해지며 이에 따라 캐리어농도의 감소와 모빌리티의 증가가 급격하게 변하는 것을 확인할 수 있다. 반면 c-plane STO 기판에서는 증착온도에 따른 박막의 배향변화가 없으며 전기적 물성 변화 또한 비교적 작은 것을 간접적으로 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.90-94
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• 2016

In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

• Economic and Environmental Geology
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• v.43 no.3
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• pp.269-278
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• 2010

We investigated characteristics of the coloring material of Dancheong pigments and hope that this study contributes the revival of traditional Dancheong pigments color. For this purpose, we collected Dancheong fragment samples that fell off naturally from old wooden buildings in Gwangju and Jeonnam and analyzed the natural coloring material by XRD and EDS-SEM analysis method. In white pigments of Dancheong fragments, it is confirmed that gypsum$(CaSO_{4}{\cdot}2H_{2}O)$, quartz$(SiO_{2})$, white lead$(PbCO_{3})$ and calcite$(CaCO_{3})$ which have been used for white pigments since ancient times and $TiO_{2}$ which is common used in modern times. In red pigments of Dancheong fragments, it is confirmed that hematite$(Fe_{2}O_{3})$ and red lead$(Pb_{3}O_{4})$, which have been used for red pigments since ancient times and C.I. pigment orange $13(C_{32}H_{24}C_{12}N_{8}O_{2})$ but there is no cinnabar(HgS) which has been used since B.C. 3000 in China. In yellow pigments of Dancheong fragments, it is confirmed that crocoite$(PbCrO_{4})$ and massicot(PbO). In blue pigments of Dancheong fragments, it is confirmed that sodalite$(Na_{4}BeAlSi_{4}O_{12}Cl)$ and nosean $(Na_{8}Al_{6}Si_{6}O_{24}SO_{4})$ as coloring material of blue pigment and C.I. pigments blue $29(Na_{7}Al_{6}Si_{6}O_{24}S_{3})$ which is used in modern times. In green pigments of Dancheong fragments, it is confirmed that calumetite$(Cu(OHCI)_{2}{\cdot}2H_{2}O)$, escolaite(Cr2O3), dichromium trioxide$(Cr_{2}O_{3})$, emerald green$(C_{2}H_{3}As_{3}Cu_{2}O_{8})$, and C.I. pigments green$(C_{32}H_{16}-XCl_{x}Cu_{8})$ which is used in modern time. In black pigments of Dancheong fragments, Chiness ink(carbon black) is confirmed.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.18-18
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• 2010

최근에 건조되는 선박이나 구조물들은 점차 대형화 되어가고, 이에 사용되는 판재들은 점차 고강도 극후판재화 되어가고 있다. 극후판재의 용접성을 향상시키기 위해서는 대입열 용접이 주로 적용되고 있는 실정인데, 30 mmt 이상의 후판을 1 pass로 용접하기 위해서는 EGW(Electro-gas welding) 기법을 사용한다. 대입열 용접은 용접입열(heat input)이 매우 높아 용착금속과 열영향부의 냉각속도가 매우 느려 용접열영향부에서 특히 fusion line 근처의 열영향부는 결정립 조대화 및 취약한 미세조직을 형성함으로서 저온인성을 크게 저하시키고, 연화 현상(softening effect)을 발생시켜 강도가 저하되는 문제점이 주로 발생하였다. 하지만 이런 문제점을 해결하기 위해 대입열용접에 사용된는 강재의 미세조직을 제어하여 AlN, TiN, $TiO_2$ 등의 석출물을 이용한 용접열영향부의 저온인성을 향상시켰다. 이러한 문제점이 발생하는 대입열용접에서 저온인성 시험은 주로 fuison line + 1, 2mm에서 수행한다. 하지만 대입열 용접시 용착금속의 냉각속도도 매우 느리기 때문에 용착금속의 위치에 따라 저온 인성 특성이 다르게 나타날 수 있다. 본 연구에서는 EGW 용착금속의 위치에 따른 저온인성 특성을 평가하기 위해 EH-36N, 40mmt 판재를 사용하여 1pole EG 용접 하였다. 용착금속의 저온인성 특성을 평가하기위해 충격 시편의 노치 위치가 fusion line - 2mm와 용접부 중앙을 기준으로 4곳을 선정하여 충격시험을 수행하였다. 또한 용착금속의 경도 분포를 알아보기 위해 micro vickers hardness tester(mitutoyo UR-501)을 사용해 hardness mapping 시험을 하였다. 용착금속의 저온인성은 미세조직과, 산소량에 따라 변화 할 수 있기 때문에 용착금속 위치를 달리하여 미세조직과 산소량도 각각 분석하였다. 용착금속의 저온인성을 향상시킬 수 있는 침상형페라이트와 비금속개재물의 상관관계에 관해 검토 하였다.

• The Journal of Korean Philosophical History
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• no.57
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• pp.57-90
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• 2018

In this discussion, as a way to verify the existence of the system to regulate Zhou dynasty's $z{\bar{o}}ng-mi{\grave{a}}o$(宗廟) numbers, the discussion was focused on '$mi{\grave{a}}o$ (廟)' and '$g{\bar{o}}ng$(宮)' in the records of "$Ch{\bar{u}}n-qi{\bar{u}}$(春秋)". As for the parts where the contents of scripture sentences were not specific, the context of the case was investigated through the writings in "$Zu{\breve{o}}-zhu{\grave{a}}n$(左傳)" and other materials. In the cases of the usage of the letter, '$mi{\grave{a}}o$(廟 : a ruler's house, a nation's royal court)', in the scripture sentences in "$Ch{\bar{u}}n-qi{\bar{u}}$(春秋)", the followings need to be noticed. In $t{\grave{a}}i-mi{\grave{a}}o$(太廟) of State $L{\check{u}}$(魯), nationwide events and a ruler's political ancestral rite, $d{\grave{i}}$(?) ritual, were performed, and fancy tools for ancestral rites used in those rituals were equipped. As for the $z{\bar{o}}ng-mi{\grave{a}}o$(宗廟) of a ruler of those times, a ritual of royal court, $ch{\acute{a}}o$(朝) rite, was performed. The usage case of the letter, '$g{\bar{o}}ng$(宮 : house)', is as the following. In $g{\bar{o}}ng$(宮) where a ruler's personal family lived was a family ancestral rite for them carried out. The record about the ornate decorating for the $hu{\acute{a}}n-g{\bar{o}}ng$ house(桓宮), which can be said to have been the political base of $s{\bar{a}}n-hu{\acute{a}}n-sh{\grave{i}}$(三桓氏), three politically noble families of State $L{\check{u}}$(魯), is outstanding. The $x{\bar{i}}-g{\bar{o}}ng$ house(西宮) during $X{\bar{i}}-g{\bar{o}}ng$(魯 僖公)'s reign and a $x{\bar{i}}n-g{\bar{o}}ng$ house(新宮 : a newly built house) destroyed by fire at the third year of $Ch{\acute{e}}ng-g{\bar{o}}ng$(魯 成公), are assumed to have been a ruler's another house, such as the $ch{\check{u}}-g{\bar{o}}ng$ house(楚宮) in which $Xi{\bar{a}}ng-g{\bar{o}}ng$(魯 襄公) used to enjoy staying, which is different from the viewpoint that it might be a $m{\acute{i}}-g{\bar{o}}ng$ shrine(?宮 : a house constructed as a shrine for the deceased father or the deceased grand father) that had been formed since Han dynasty. It has been discussed that, regarding the records that the '$w{\check{u}}-g{\bar{o}}ng$ house(武宮) was built' and that the '$y{\acute{a}}ng-g{\bar{o}}ng$ house(煬宮) was built', certain buildings were established with the symbols of '$w{\check{u}}$(武 : martial arts and force of arms)' and '$y{\acute{a}}ng$(煬 : to burn and get rid of everything)', and the events that a lord stood as its lord continued. Therefore, its main goal was not the performance of a dutiful ancestral rite by a ruler of those times for deceased rulers, for instance, $W{\check{u}}-g{\bar{o}}ng$(魯 武公) or $Y{\acute{a}}ng-g{\bar{o}}ng$(魯 煬公), but display of certain political symbolism through the ritual. This symbolism is most obvious with the $hu{\acute{a}}n-g{\bar{o}}ng$ house(桓宮) and the $x{\bar{i}}-g{\bar{o}}ng$ house(僖宮). As a consequence, all $mi{\grave{a}}os$(廟) and $g{\bar{o}}ngs$(宮) in scripture sentences had the functions of a shrine in some part, but it has been verified that they were not the buildings set up as a shrine to follow '$z{\bar{o}}ng-mi{\grave{a}}o$(宗廟)'s number regulation system' of '$ti{\bar{a}}nz{\check{i}}-7-mi{\grave{a}}o$(天子七廟 : an emperor owns seven $mi{\grave{a}}os$(廟))' or '$zh{\bar{u}}h{\acute{o}}u-5-mi{\grave{a}}o$(諸侯五廟 : a lord owns five $mi{\grave{a}}os$(廟))'.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.29-32
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• 2012

Lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ti_{0.83})O_3$ (hereafter 0.98NKN-0.02LST) ceramics doped with $Ag_2O$ were prepared using a conventional mixed oxide method. The specimen showed superior structural and electrical properties when 1 mol% $Ag_2O$ was doped. For the 0.98NKN-0.02LST+1.0mol%$Ag_2O$ ceramics sintered at $1,100^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 207 pC/N. The 0.98NKN-0.02LST+1.0 mol%$Ag_2O$ ceramics are a promising candidate for lead-free piezoelectric materials.

• Journal of the Korean Magnetics Society
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• v.7 no.2
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• pp.90-96
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• 1997

We have studied crystallographic and magnetic properties of $NdFe_{10.7}Ti_ {1.2}Mo_{0.1}$ by Mossbauer spectroscopy, X-ray diffraction and vibrating sample magnetometer (VSM). The alloys were prepared by arc-melting under an argon atmosphere. The $NdFe_{10.7}Ti_{1.2}Mo_{0.1}$ has pure a single phase, whereas $NdFe_{10.7}Ti_{1.3}$ contains some $\alpha$-Fe, conformed with X-ray diffractometry and Mossbauer measurements. The $NdFe_{10.7}Ti_ {1.2}Mo_{0.1}$ has a $ThMn_{12}-type$ tetragonal structure with $a_0=8.637{\AA}$ and $c_0=4.807{\AA}$. The Curie temperature ($T_c$) is 600 K from the result of Mossbauer measurement performed at various temperatures ranging from 13 to 800 K. Each spectrum of below $T_c$ is fitted with five subspectra of Fe sites in the structure ($8i_1, 8i_2, 8j_2, 8j_1, 8f$). The area fractions of the subspectra at room temperature are 12.3%, 14.0%, 21.0% 11.8%, 40.9%, respectively. Magnetic hyperfine fields for the Fe sites decrease in the order, $H_{hf}(8i)>H_{hf}(8j)>H_{hf}(8f)$. The abrupt changes in the magnetic hyperfine field, an magnetic moment observed at about 160 K in $NdFe_ {10.7} Ti_{1.2}Mo_{0.1}$ are attributed to spin reorientations. The average hyperfine field of the $NdFe_{10.7}Ti_{1.2}Mo_{0.1}$ shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.34(T/T_C)^{3/2}-0.14(T/T_C)^{5/2}$ for $T/T_c<0.7$, indicative of spin wave excitation. The Debye temperatures of $NdFe_{10.7}Ti_{1.2}Mo_{0.1}$ is found to be Θ=340$\pm$5 K.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.3
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• pp.330-336
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• 2005

The ozone injection method was proposed to improve the catalytic process for the removal of nitrogen oxides ($NO_x$). Nitric oxide (NO) in the exhaust gas was first oxidized to nitrogen dioxide ($NO_2$) by ozone produced by dielectric barrier discharge, and then the exhaust gas containing the mixture of NO and $NO_2$ was directed to the catalytic reactor where both NO and $NO_2$ were reduced to $N_2$ in the presence of ammonia as the reducing agent. A commercially available $V_2O_5-WO_3/TiO_2$ catalyst was used as the catalytic reactor. The $NO_2$ content in the mixture of NO and $NO_2$ was changed by the amount of ozone added the exhaust gas. The effect of reaction temperature, initial $NO_x$ concentration, feed gas flow rate, and ammonia concentration on the removal of $NO_x$ at various $NO_2$ contents was examined and discussed. The increase in the content of $NO_2$ by the ozone injection remarkably improved the performance of the catalytic reactor, especially at low temperatures. The present ozone injection method appears to be promising for the improvement of the catalytic reduction of $NO_x$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.3
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• pp.42-51
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• 1981

Boron was predeposited into p (100) Si wafer at 94$0^{\circ}C$ for 60minutes to make the back surface field. High tempreature diffusion process at 1145$^{\circ}C$ for 3 hours was immediately followed without removing boron glass to obtain high surface concentration Back boron was annealed at 110$0^{\circ}C$ for 40minutes after boron glass was removed. N+ layer was formed by predepositing with POCI3 source at 90$0^{\circ}C$ for 7~15 minutes and annealed at 80$0^{\circ}C$ for 60min1es under dry Of ambient. The triple metal layers were made by evaporating Ti, Pd, Ag in that order onto front and back of diffused wafer to form the front grid and back electrode respectively. Silver was electroplated on front and back to increase the metal thickness form 1~2$\mu$m to 3~4$\mu$m and the metal electrodes are alloyed in N2 /H2 ambient at 55$0^{\circ}C$ and followed by silicon nitride antireflection film deposition process. Under artificial illumination of 100mW/$\textrm{cm}^2$ fabricated N+PP+ cells showed typically the open circuit voltage of 0.59V and short circuit current of 103 mA with fill factor of 0.80 from the whole cell area of 3.36$\textrm{cm}^2$. These numbers can be used to get the actual total area(active area) conversion efficiency of 14.4%(16.2%) which has been improved from the provious N+P cell with 11% total area efficiency by adding P+ back.