• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.282-282
• /
• 2013

The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

• 제어로봇시스템학회논문지
• /
• 제14권4호
• /
• pp.365-368
• /
• 2008

Feasibility test for radical reactions in organic light emitting diode(OLED) has been applied on OLED consisting of hole transport layer(HTL) and electron transport layer(ETL). Organic molecules such as 4,4',-Bis[N-(1-naphthyl)-N-phenylamino] biphenyl(NPD) and 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine(m-MTDATA) are chosen for hole transport layer(HTL) and Bathocuproine(BCP) for electron transport layer(ETL) in this study. Informations on energy and shape of frontier orbitals and data on radical reactions of simple aromatics from semiconductor($TiO_2$) photocatalysis have provided basis for determining feasibility for radical reactions in OLED. The outcome of our feasibility test would be useful in designing optimum molecule for organic layer with a view to extending the lifetime of OLED.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.234-237
• /
• 2000

In this paper, the structural, dielectric and piezoelectric properties of the Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.035}$- $_Mn_{1}$3/N $b_{2}$3/)$_{0.065}$-(Z $r_{0.49}$, $Ti_{0.51}$)$_{0.90}$] $O_3$ ceramics were investigated with respect to the variation of the milling time. Grain size was decreased as the increase of milling time. As the milling time is increased, the particle size of the powder was decreased. Dielectric constant and electromechanical coupling factor (Qm)were slowly increased with the increase of milling time. The highest value of Qm was 1,497 at milling time 8 hour. Temperature coefficient of resonant frequency(TC $F_{r}$) was moved to positive side with the increase of milling time.e.e.e.e.e.e.

• Nuclear Engineering and Technology
• /
• 제53권8호
• /
• pp.2564-2569
• /
• 2021

The neutronic analysis of Helium Cooled Ceramic Reflector (HCCR) breeding blankets has been performed using the 3D Monte Carlo code MCNPX and ENDF nuclear data library. This study aims to reduce ⁶Li percentage in the breeder zones as much as possible ensuring tritium self-sufficiency. This work is devoted to investigating the effect of ⁶Li percentage on the HCCR breeding blanket's neutronic parameters, such as neutron flux and spectrum, Tritium Breeding Ratio (TBR), nuclear power density, and energy multiplication factor. In the ceramic breeders at the saturated thickness, increasing the enrichment of ⁶Li reduces its share in the tritium production. Therefore, ceramic breeders typically use lower enriched Li from 30% to 60%. The investigation of neutronic analysis in the suggested geometry shows that using 60% ⁶Li in Li₂TiO₃ can yield acceptable TBR and energy deposition results, which would be economically feasible.

• 한국전기전자재료학회논문지
• /
• 제18권3호
• /
• pp.248-252
• /
• 2005

The effects of electric field strength and mechanical compressive stress on the displacement of multilayered ceramic actuator, stacked alternatively 0.2 (PbM $n_{1}$3/N $b_{2}$3/ $O_3$)-0.8(PbZ $r_{0.475}$ $Ti_{0.525}$ $O_3$) ceramic thin films and 70Ag-30Pd electrodes were investigated. Because the actuators were designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. so the polarization and strain were affected by the amount of 180$^{\circ}$domain, electric field strength and mechanical compressive stress. Consequently, the change of polarization, displacement with respect to field strength, and mechanical compressive stress were likely to be caused by readiness of the domain wall movement around the ceramic-electrode interfaces.ces.

• Transactions on Electrical and Electronic Materials
• /
• 제4권1호
• /
• pp.15-20
• /
• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• 한국전기전자재료학회논문지
• /
• 제29권6호
• /
• pp.332-336
• /
• 2016

In this study, in order to develop the composition ceramics for ultrasonic sensor with high $d_{33}*g_{33}$, $Pb_{1-3x/2}Bix(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$(PMW-PNN-PZT) system ceramics were prepared using CuO as sintering aids. And then, their microstructure, piezoelectric and dielectric characteristics were systemetically investigated with bismuth substitution. The PMW-PNN-PZT ceramic specimens could be sintered at sintering temperature of $940^{\circ}C$ by adding sintering aids. At x=0.015 specimen, the density, electromechanical coupling factor($k_p$), dielectric constant, piezoelectric constant($d_{33}$) and piezoelectric figure of merit($d_{33}*g_{33}$) indicated the optimal properties of $7.90g/cm^3$, 0.67, 2,511, 628 pC/N, and $17.7pm^2/N$, respectively, for duplex ultrasonic sensor application.

• Journal of information and communication convergence engineering
• /
• 제2권2호
• /
• pp.93-96
• /
• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.802-805
• /
• 2004

압전 액츄에이터는 다른 종류의 액츄에이터와 비교할 때 높은 강성, 빠른 응답성의 우수한 특성을 가지고 있다. 벤더형 액츄에이터는 높은 변위의 장점을 가지나 높은 전기장과 기계적 부하인가시에는 내부 응력이 증가하므로서 신뢰성이 감소한다는 단점을 가지고 있다. 이러한 단점을 보완하기 위하여 여러 방법으로 내부 응력을 줄이려는 시도가 있으며 그중 하나는 경사기능 소재나 경사기능 구조를 가지는 액츄에이터의 개발이다. 본 연구에서는 경사기능 특성을 모사한 액츄에이터 구조를 제작하고 그 특성을 조사하였다. 두 가지의 압전상수 d31= - 220 pC/N, d31 =- 100 pC/N를 가지는 세라믹층을 적층하여 벤더형 액츄에이터의 특성을 관찰하였다. 그 결과 두 종류의 세라믹층으로 적층한 액츄에이터가 한가지 특성의 세라믹으로 제작한 액츄에이터 보다 전압인가시 20%이상의 우수한 변위 특성을 나타내었다. 이러한 변화는 내부 응력의 감소에 기인한 것으로 예상된다.

• 대한전기학회논문지
• /
• 제41권5호
• /
• pp.508-516
• /
• 1992

In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.