• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.334-337
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• 2017

In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Korea-Australia Rheology Journal
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• v.15 no.1
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• pp.9-17
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• 2003

The rheological behaviour of anatase $TiO_2$ with organic coating has been investigated extensively in this study. The yield stress was measured over a wide range of solids concentration and pH using stress-controlled and speed-controlled rheometers. The organic treatment leads to a shift of the isoelectric point (IEP) from around pH 5.5 to pH 2.4. A maximum yield stress occurs in the vicinity of the isoelectric point determined by electrokinetic measurements. The transition of rheological behaviour between elastic solid and viscous liquid is represented by a stress plateau in a plot of stress against strain. It is hypothesised that the slope of the stress plateau reflects the uniformity of the structure, and hence the distribution of bond strength. Altering the concentration and the surface chemistry can vary the bond strength and its distribution. therefore, resulting in different type of failure: "ductile-type" or "brittle-type". pH and volume fraction dependence of yield stress could be described quantitatively using existing models with reasonable agreement.easonable agreement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.92-95
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained at SCT15 thin film. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.3
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• pp.223-230
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• 2002

Titania photocatalytic oxidation reactors were studied to investigate degradation efficiencies of hydrocarbons. In general, it is well known phenomena that thin layered titania oxidizes most of hydrocarbons to carbon dioxide and water under UV light. In this study, degradation efficiencies were measured due to changes in reactor structures, UV sources, the number of titania coatings, and various hydrocarbon chemicals. It was proven that gas degradation efficiencies are related to such factors as UV transmittance of coating substance, collision area of surface, and gas flow rate. For packing type annular reactor, about 98% degradation efficiency was achieved for achieved for propylene of 500 ppm level at a flow rate of 100 ml/min. Several gases were also tested for double-coated titania thin film under the condition of continuous flow of 100 ml/min and 365 nm UV source. It was shown that degradation efficiencies were decreasing in the order: $C_3$ $H_{6}$, n-C$_4$ $H_{10}$, $C_2$ $H_4$, $C_2$ $H_2$, $C_{6}$ $H_{6}$ and $C_2$ $H_{6}$./. 6/./.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.20-20
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• 2010

The effect of excimer laser annealing on the structural and dielectric behaviors of $PbZr_{0.52}Ti_{0.48}O_3$ (PZT) thin films has been investigated. The amorphous PZT thin films were prepared on Pt/Ti/$SiO_2$/Si substrates by a sol-gel method. The PZT precursor was prepared from lead acetate, zirconium acetylacetonate, and titanium isopropoxide. The starting materials were dissolved in n-propanol and 1,3-propanediol. After, the amorphous PZT thin films were laser-annealed (using KrF excimer laser) as a function of the laser energy density and the number of laser pulse. Structural properties of PZT thin films are characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric characterization was done on a RT66A test system and a Agilent 4294A impedance analyzer. The PZT thin films show that excimer laser irradiation drastically improved the crystallization and dielectric properties of the PZT thin films, depending on the energy density and the pulse number.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.559-563
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.472-473
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• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Nuclear Engineering and Technology
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• v.47 no.7
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• pp.814-826
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• 2015

The most important advantage of nanoparticles is the increased thermal conductivity coefficient and convection heat transfer coefficient so that, as a result of using a 1.5% volume concentration of nanoparticles, the thermal conductivity coefficient would increase by about twice. In this paper, the effects of a nanofluid ($TiO_2$/water) on heat transfer characteristics such as the thermal conductivity coefficient, heat transfer coefficient, fuel clad, and fuel center temperatures in a VVER-1000 nuclear reactor are investigated. To this end, the cell equivalent of a fuel rod and its surrounding coolant fluid were obtained in the hexagonal fuel assembly of a VVER-1000 reactor. Then, a fuel rod was simulated in the hot channel using Computational Fluid Dynamics (CFD) simulation codes and thermohydraulic calculations (maximum fuel temperature, fluid outlet, Minimum Departure from Nucleate Boiling Ratio (MDNBR), etc.) were performed and compared with a VVER-1000 reactor without nanoparticles. One of the most important results of the analysis was that heat transfer and the thermal conductivity coefficient increased, and usage of the nanofluid reduced MDNBR.