• Title/Summary/Keyword: TiN-M

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Irradiation-resistant Properties of Structurally Controlled Molybdenum Alloys Through a Multi-step Internal Nitriding

  • Nakahara, Takayuki;Okamoto, Yoshihisa;Nagae, Masahiro;Yoshio, Tetsuo;Kurishita, Hiroaki;Takada, Jun;Hiraoka, Yutaka;Takida, Tomohiro
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1161-1162
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    • 2006
  • In order to overcome the recrystallization embrittlement and irradiation embrittlement of Mo, which are major problems for its fusion applications, internally nitrided Mo alloys were prepared by a novel multi-step internal nitriding. Neutron irradiation was performed in the Japan Material Testing Reactor (JMTR). After irradiation, nitrided Mo alloys exhibited $\iota$ ower ductile-brittle transition temperature than irradiated TZM. These results suggested that multi-step internal nitriding was effective to the improvement in the embrittlement by irradiation. Transmission electron microscope observation revealed that TiN particles precipitated by nitriding acted as a sink for irradiation-induced defects.

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Effect of Vacuum Annealing on Thin Film Nickel Silicide for Nano Scale CMOSFETs

  • Zhang, Ying-Ying;Oh, Soon-Young;Kim, Yong-Jin;Lee, Won-Jae;Zhong, Zhun;Jung, Soon-Yen;Li, Shi-Guang;Kim, Yeong-Cheol;Wang, Jin-Suk;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.10-11
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    • 2006
  • In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at $600^{\circ}C$ due to the thin thickness (15 nm) of the nickel silicide. However, the sheet resistance maintained stable characteristics up to $600^{\circ}C$ for 30 min after vacuum annealing. Therefore, the low resistance of thin film nickel silicide was obtained by vacuum annealing at $600^{\circ}C$.

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Dye-sensitized solar cells using size dependent SBM binder

  • Park, Gyeong-Hui;Kim, Eun-Mi;Jo, Hong-Gwan;Wang, Gyo;Hong, Chang-Guk;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.116-116
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    • 2009
  • $TiO_2$ pastes was synthesized to obtained of high efficiency dye-sensitized solar cells using size dependent co-polymer. SBM co-polymer binder is consist of styrene, n-butyl acrylate, and methacrylic acid (SBM) monodisperse co-polymer binder materials and this $TiO_2$ pastes were applied of dye-sensitized solar cells (DSSCs). The photoanodes were characterized by ATR-Fourier Transform spectrometer, X-ray diffraction (XRD) and morphology was investigated by field emission scanning electron microscopy (FE-SEM). The photoelectrochemical properties of the thin films and the performance of DSSCs were measured by photovoltaic-current density, AC impedance and monochromatic incident photon-to-current conversion efficiency (IPCE). DSSC based on the 100nm size co-polymer binder was obtained conversion efficiency of 8.1% under irradiation of AM 1.5(100 $mWcm^2$).

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Study on the Fabrication of Embedded Capacitor Films for PWB substrate (PWB 기판용 Embedded Capacitor필름 제작에 관한 연구)

  • 이주연;조성동;백경욱
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.21-27
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    • 2001
  • Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

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Coarsening Mechanism in Cemented Carbides and Suggestion for Suppression of Grain Growth (Cemented Carbides에서의 입성장 기구와 입성장 억제를 위한 제안)

  • Choi, K.;Choi, U.S.;Hwang, N.M.;Kim, D.Y.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2001.04a
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    • pp.14-14
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    • 2001
  • WC-Co 계의 입성장 억제는 현재 초경합금 분야에서 공학적으로 가장 중요한 이슈들 중의 하나이다 VC를 비롯한 입방정 탄화물이나 $Cr_3C_2$ 등의 여러 가지 탄화 물이 혼합되어 입성장 억제에 이용되는데 입성장 억제의 효과는 대략적으로 용해되는 탄화물의 양에 의존하고 있는 것으로 추정된다. 보다 효율적으로 입성장 억제를 실현하려면 입성장 기구를 명확히 할 필요가 있다. 최 등[1]은 VC가 WC 입자 표면 에서의 edge energy를 증가시켜서 2차원 핵생성의 에너지 장벽을 올리게 하고 이에 따라 입성장이 억제된다는 모델을 제안하였다. 이러한 모텔을 입증하기 위해서는 이론적으로만 예측이 가능한 edge energy보다 좀 더 명확한 물리적인 변수가 제시되어야 할 것이다. 여기서는 또 다른 계인 NbC- TiC-Co 계에서 NbC와 TiC의 버에 따른 입성장 거동과 입자의 형상간의 관계로부터 업성장과 edge energy 그리 고 edge energy와 입자 형상간의 관계를 알아보고 이로부터 좀 더 구체적인 의미 에서의 입성장 모텔과 입성장 억제기구를 제시하고자 한다.

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Fabrication of the 7$\times$7 mm Planar Inductor for 1W DC-DC Converter (1W DC-DC 컨버터를 위한 7$\times$7 mm 평면 인덕터의 제조)

  • Bae, Seok;Ryu, Sung-Ryong;Kim, Choong-Sik;Nam, Seoung-Eui;Kim, Hyoung-June;Min, Bok-Ki;Song, Jae-Sung
    • Journal of the Korean Magnetics Society
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    • v.11 no.5
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    • pp.222-225
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    • 2001
  • The planar type inductors have a good potential for the application of miniaturized low power DC-DC converters. For those high quality application, the reduction of coil loss and also magnetic films which have good high frequency properties are required. Fabricated inductor was consisted of FeTaN/Ti magnetic film and electroplated Cu coil thickness of 100$\mu\textrm{m}$ and $SiO_2$ as a insulating layer. The inductor was designed double rectangular spiral shape for magnetic field highly confining within the device. The measured value of inductance and resistance were 980 nH and 1.7 $\Omega$ at 1 MHz as operating frequency of device. The Q factor is 3.55 at 1 MHz.

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An Overview on the Physicochemical Properties and Photocatalytic Pollutant Removal Performances of TiO2-incorporated Cementitious Composites (TiO2 혼입 시멘트 복합체의 물리·화학적 특성 및 광촉매 반응을 이용한 오염물 제거 성능에 대한 개요)

  • Seo, J.H.;Yoon, H.N.;Kim, S.H.;Bae, S.J.;Jang, D.I.;Kil, T.G.;Park, S.M.;Lee, H.K.
    • Composites Research
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    • v.33 no.2
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    • pp.68-75
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    • 2020
  • Recently, the use of TiO2 as a phtocatalyst has been diversely investigated due to its excellent durability performance and high photocatalytic reaction efficiency. Active researches have particularly focused on the development of TiO2-incorporated cementitious composites in order to remove the atmospheric pollutants. Furthermore, the potential utilization of TiO2-incorporated cementitious composites as road accessories such as tunnels, road median separators and soundproof walls in the form of tiles, blocks and structural components has been widely examined. In this regard, a thorough understanding on the material characteristics of TiO2-incorporated cementitious composites should be preceded. The present overview article, therefore, revisits previous studies of TiO2-incorporated cementitious composites and summarizes their various physicochemical properties and atmospheric pollutants removal performance.

Microstructure and dielectric properties with a contents Ca of (Sr.Ca)$TiO_3$-based grain boundary layer ceramics ((Sr.Ca)$TiO_3$계 입계층 세라믹의 Ca변화량에 따른 미세구조 및 유전특성)

  • 최운식;김충혁;이준웅
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.534-542
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    • 1994
  • Microstructures and dielectric properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.006Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramic were investigated. The specimens fired in a reducing atmosphere(N$_{2}$) were painted on the surface with CuO paste, and then annealed at 1100.deg. C for 2 hr. SEM and EDAX revealed that CuO penetrated rapidly into the bulk along the grain boundaries during the annealing. Grain size increased with increasing Ca content up to 15[mol%], but decreased with further addition. In the specimens with 10-15[mol%l of Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss(tan .delta[%]) <0.3[%] and capacitance change rate with temperature <.+-.[%], respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over 10$^{6}$ [Hz].z].

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The Piezoelectric and Dielectric Properties of PZT-PMFW Piezoelectric Ceramics (PZT-PMFW 압전 세라믹의 압전 및 유전 특성)

  • 이종섭;이문주;이용희;정수현;임기조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.689-692
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    • 2001
  • In this paper, the pizoelectric and dielectric properties of 0.95Pb(ZrxTil-x)O$_3$- 0.05Pb(Mn$\_$0.2/Fe$\_$0.4/W$\_$0.4/)O$_3$piezoelectric ceramics is investigated as a function of Zr/Ti mole ratio. Also, MPB(Morphotropic Phase Boundary) and optimal sintering temperature is studied using XRD and SEM. As a results, when Zr/Ti mole ratio is 52/48, electromechanical coupling factor, k$\_$p/, is 58[%], permittivity, $\varepsilon$$\^$T/$\_$33//$\varepsilon$0, is 1360 and piezoelectric strain constant, d$\_$33/ is 265[pC/N] and the piezoelectric and dielectric properties become maximum. Phase transition temperature of its ternary piezoelectric system is about 350[$^{\circ}C$]. From the XRD analysis, when Zr/Ti mole ratio is 52/48, tetragonal phase transits to rhombohedral phase. Also, From measuring results of the sintering density, when sintering temperature is 1050[$^{\circ}C$], sintering density become maximum and is about 7930[kg/㎥], and average grain size is about 2-3[$\mu\textrm{m}$].

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Dielectric and electrostrictive properties of (Pb,Ba)(Zr,Ti))$O_3$ ceramics with $Y_2O_3$addition ((Pb,Ba)(Zr,Ti)$O_3$계 세라믹스의 )$Y_2O_3$첨가에 따른 유전 및 전왜 특성)

  • 김규수;윤광희;윤현상;홍재일;유주현;박창엽
    • Electrical & Electronic Materials
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    • v.9 no.6
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    • pp.551-557
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    • 1996
  • To decrease the hysteresis of electric field induced strain, $Y_{2}$ $O_{3}$ dopant of which amount is 0-0.8wt% was added to the (P $b_{0.73}$B $a_{0.27}$)(Z $r_{0}$ 75/ $Ti_{0.25}$) $O_{3}$ ceramics. Electromechanical coupling coefficients of the specimen with 0.1 Wt% $Y_{2}$ $O_{3}$ were $k_{p}$=26.9% and $k_{31}$ =20.4%, which exhibited the maximum value at the constant bias electric field of 10 kV/cm. At the same $Y_{2}$ $O_{3}$ addition amount, electric field piezoelectric constant ( $d_{3l}$) and strain(.DELTA.l/l) showed the maximum values of 139.6*10$^{-12}$ [C/N] and 126*10$^{-6}$ .DELTA. l/l respectively at 10 kV/cm electric field. And the hysteresis of strain showed the minimum value of 17.5%. So, we propose that it is possible to apply PBZT system with $Y_{2}$ $O_{3}$ dopant to the electrostrictive actuator.r.r.

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