• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.49-51
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• 1997

New complex perovskite compounds (Na0.5Sr0.5)(Ti0.5Nb0.5)O3, (Na0.5Sr0.5)(Zr0.5Ti0.5)O3 and (Na0.5Sr0.5)(Ti0.5Ta0.5)O3 have been prepared. The crystal structures of these compounds were determined by powder X-ray Rietveld analysis. The crystal structure of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 and (Na0.5Sr0.5)(Zr0.5Ta0.5)O3 was Pmmn, and that of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 was I4/mmm. All these compounds showed the superstructure due to the oxygen octahedron distortion. The selected bond distances and bond angles were calculated by the OFFER. The octahedron distortion for each sample, which was measured from the bond distances and bond angles, showed the following order: (Na0.5Sr0.5)(Z0.5Ta0.5)O3> (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 > (Na0.5Sr0.5)(Ti0.5Ta0.5)O3. Dielectric properties were measured for the samples. In this study, the crystal structure and dielectric properties of the new complex perovskite structures and discussed.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.1
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• pp.128-133
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• 2010

The Titanium has many superior characteristics which are specific strength, heat resistance, corrosion resistance, organism compatibility, non-magnetic and etc. and their quantity are abundant. this study performed turning operation of Ti-6Al-4V alloy using the TiAlN Coated Tool which treated Physical Vapor Deposition. Experimental works are also executed to measure cutting force, tool wear, chip figuration and surface roughness for different cutting conditions. As a result of study. Cutting depth influences on the cutting force much more than the feed rate and the value of the cutting force is the most stable at the depth of 1.0mm. And tool wear was serious at over 100m/min of cutting speed and cutting condition was excellent at 1.0mm of cutting depth.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.50-50
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• 1988

The controlled Ti(CO2H5)4 hydrolysis reactions for the synthesis of Spherical Monodispersed Titania powders are described. Increasing the concentration of TEOT and the molar ratio of water to TEOT in alcohol solution decrease the reaction time and the particle size. The reaction time is delalyed by increasing the chain length and the number of carbon branches of alcohol as a solvent. The prepared powders with an average diameter of 0.8μ and the spherical monodispersed transfer to Rutile phase at 550℃.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.4
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• pp.81-87
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• 2004

The titanium has many superior characteristics such as specific strength, heat resistance, corrosion resistance, organism compatibility, non-magnetic and etc. and their quantity are abundant. This study performed turning operation of Ti-6Al-4V alloy using the TiAlN coated tool which was treated with PVD. Experimental works were also executed to measure cutting force, chip figuration and surface roughness for different cutting conditions. As a result of study, tool wear was serious at the condition over 100m/min of cutting speed. The excellent cutting condition of cutting depth was at 1.0mm.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.46-52
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• 1998

Barium titanate owes its great importance to the fact that its dielectric constant is about 100 times higher than that of conventional dielectric materials provided its compositional and structural purity is extremely high. The value of crystalline BaTiO3 bodies as used, for instance, in computer elements, magnetic amplifiers, memory device, ets., depend on boththe compositional and the structural purity of the BaTiO3 crystals. This purity will, in turn, depend on the purity of the raw materials used in manufacturing the BaTiO3 compound and on the particularmethods of manufacture which determine the size, homogeneity, and the structural purity of the crystals. This paper reviews the important theoretical considerations, processing techniques and applications related to sol-gel derived thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.360-361
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• 2008

A new kind of SBM co-polymer binder as styrene, n-butyl acrylate, and methacrylic acid (SBM) monodisperse co-polymer binder materials basted on $TiO_2$ pastes was synthesized and this $TiO_2$ pastes were applied of dye-sensitized solar cells (DSSCs). The SBM co-polymer binder was prepared by soap-free emulsion copolymerization using a PEG-EEM macromonomer. The photoanodes were characterized by morphology investigated from field emission scanning electron microscopy (FE-SEM). The photoelectrochemical properties of the thin films and the performance of DSSCs were measured by photovoltaic-current density. DSSC based on the emulsion co-polymer binder was obtained conversion efficiency of 7.1% under irradiation of AM 1.5($100mWcm^{-2}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.264-271
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• 2006

RF sputtering process was applied to produce thin hydroxyapatite(HAp) films on Ti-6Al-4V alloy substrates. The effects of different heat treatment conditions on the chemical composites between HAp thin films and Ti-6Al-4V alloy substrates were studied. After deposition, the HAp thin films were heat treated for 1h at $400^{\circ}C,\;600^{\circ}C\;and\;800^{\circ}C$ under the atmosphere, and analyzed O/M, FESEM-EDX and ESCA, respectively. Experimental results represented that interface of HAp thin films and Ti-6Al-4V alloy substrates was composed Ti-OH, TiO, TiN, $Al_2O_3,\;V_2O_3,\;VO_2$. pyrophosphate and decreased carbide followed by the increase of heat treatment temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.