• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1994년도 특별강연 및 추계학술발표 개요집
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• pp.166-168
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• 1994

• 전기화학회지
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• 제15권3호
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• pp.149-153
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• 2012

The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

• 한국주조공학회지
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• 제20권5호
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• pp.300-306
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• 2000

The objective of this work was to investigate the effects of SiC particle size(50, 100 ${\mu}m$) and additional elements such as Si, Cu and Ti on aging behavior in Al-5Mg-X(Si,Cu,Ti)/SiCp composites fabricated by pressureless infiltration method using hardness and wear test, scanning electron microscopy(SEM) and differential scanning calorimetry(DSC). The peak aging time in Al-5Mg-X(Si, Cu, Ti)/SiCp(50, 100 ${\mu}m$) composites is shorter than Al-5Mg-0.3Si alloy.The peak aging time of 50 ${\mu}m$ SiC particle reinforced Al-5Mg-X(Si,Cu,Ti) composites is shorter than those of 100 ${\mu}m$ SiC particle reinforced of Al-5Mg-X(Si,Cu,Ti) composites. The Al-5Mg-0.3Si-0.1Cu-0.1Ti/SiCp(50 ${\mu}m$) composites aged at $180^{\circ}C$ has higher hardness and better wear resistance than any other aged composite.The aging effect is promoted by the addition of Si and Cu in Al-5Mg/SiCp composites, so the wear resistance of Al-5Mg/SiCp composites with Si and Cu elements is enhanced by the aging treatment.

• 한국재료학회지
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• 제7권10호
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• pp.884-890
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• 1997

Sputtering 방법을 통해 Si기판 위에 Ti와 TiN박막을 증착하고 저압 반응관내에서 Cu*hfac)(TMVS)를 precursor로 사용 MOCVD Cu박막을 증착하여 Cu/TiN/Ti/Si구조의 다층박막을 제조하였고 이에 대한 열처리 방식 및 분위기 변화 등을 통해 열처리 조건에 따른 Cu 박막의 특성 변화에 대해 조사하였다. 열처리 방식으로는 Cu박막을 형성한 후 공기 중에 노출이 없이 바로 열처리하여 Cu산화물 형성을 억제할 수 있는 in-situ열처리 방식이 유리하고, 열처리 분위기로는 Cu 박막의 표면이나 결정립계 내에 존재하는 Cu 산화물을 환원시켜 줄 수 있는 H$_{2}$(10%)/Ar분위기가 표면평탄화, 결정립 크기 증가 및 비저항 감소측면에서 우수한 특성의 Cu박막을 얻을 수 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.169-169
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• 2000

최근 반도체 소자의 초고집적화 현상에 따라 기존의 Al-base 합금에 대한 한계에 달하면서 그에 대한 대체 물질로 Cu가 관심을 모으게 되었고 그럼으로써 Cu metallization을 위한 많은 연구가 진행되어 왔다. Cu는 Al-base 합금계보다 비저항이 낮고, 녹는점이 높으며, 또한 electromigration 특성이 뛰어난 것으로 알려져 있다. 공학적인 면에서 이미 이들 계에 대한 adhesion 및 전기적 특성에 대한 많은 연구가 있어왔지만, 이들 특성 변화에 대한 물리적 의미를 제공할 만한 기초 자료들이 부족한 상태이다. 본 연구에서는 부도체인 polyimide 박막과 diffusion barrier인 TiN 박막위에서의 Cu 박막성장에 따르는 interface chemical reaction의 변화를 XPS를 이용하여 관찰함으로서 이들 계에 있어서의 adhesion과의 관계를 조사하였다. 그리고 XPS를 이용한 modified surface accumulation method를 적용시켜 TiN diffusion barrier를 통한 Cu의 grain boundary diffusion 상수들을 측정하였다. Cu/TiN system의 경우에는 interface chemical reaction이 일어나지 않았지만 Cu/polymide system에 있어서는 boundary diffusivity는 특히 40$0^{\circ}C$에서 $650^{\circ}C$ 영역에서, Db=60$\times$10-11exp[-0.29/(kBT)]cm2/sec 이었다.

• 한국분말재료학회지
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• 제14권5호
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• pp.292-297
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• 2007

The present study was focused on the synthesis of a $TiB_2$ dispersed copper matrix composite material by the combination of the mechanical milling and plasma activated sintering processes. The $Cu/TiB_2$ mixed powder was prepared by the combination of the mechanical milling and reduction processes using the copper oxide and titanium diboride powder as the raw material. The synthesized $Cu/TiB_2$ mixed powder was sintered by the plasma activated sintering process. The hardness and electric conductivity of the sintered bodies were measured using micro vickers hardness and four probe method, respectively. The relative density of $Cu/TiB_2$ composite material sintered at $800^{\circ}C$ showed about 98% of theoretical density. The $Cu-1vol%TiB_2$ composite material has a hardness of about 130Hv and an electric conductivity of about 85% IACS. The hardness and electric conductivity of $Cu-3vol%TiB_2$ composite material were about 140 Hv and about 45% IACS, respectively.

• 한국재료학회지
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• 제15권12호
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• pp.824-828
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• 2005

In this study the effect of the content of $TiB_2$ on wear properties was investigated. $Cu-TiB_2$ composites have been fabricated by hot extrusion. Sliding wear tests were peformed by a pin-on-disk type wear test machine under dry condition and loads varied with from 20N to 80N at sliding speed 3.5Hz. The test results showed that the wear losses and the friction coefficients decreased with increasing $Cu-TiB_2$ volume fraction and increasing the size of $Cu-TiB_2$ particle. Wear property of $10{\mu}m,\;5 vol\%\; TiB_2$ specimen was excellent all of the wear specimens. It is thought that the increase of plastic flow resistivity due to uniform distribution of $10{\mu}m,\;5 vol\%\; TiB_2$ wear specimen would improve wear property. The worn surface and wear debris were examined by optical microscope and scanning electron microscope.

• 열처리공학회지
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• 제37권4호
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• pp.172-181
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• 2024

In this study, the effect of addition of Ti and Co elements on microstructural evolution and characteristics of vacuum-casted Cu-25%Cr electrical contact material was investigated. The coarse and insoluble Cr phases with an average size of 300 ㎛ in commercial Cu-25%Cr alloy were reduced to tens of micrometers in vacuum casted Cu-25%Cr-X(X=Ti, Co) alloy, which can be interpreted as result controlling coarsening and the work-frame structure of the insoluble Cr phase by the formation of intermetallic compounds such as Cr₂Ti or Cr_0.5Co_1.5Ti around the Cr phase As a result, the electrical properties such as weight loss and fusion resistance against the repeated arc generation of the electrical contact material as well as the mechanical properties were greatly improved.

• Applied Microscopy
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• 제24권4호
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• 한국세라믹학회지
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• 제55권3호
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• pp.267-274
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• 2018

$TiO_2/CuS$ nanocomposites were fabricated by precipitation of nanosized CuS via sonochemical method on electrospun $TiO_2$ nanofibers, and their structure, chemical bonding states, optical properties, and photocatalytic activity were investigated. In the $TiO_2/CuS$ nanocomposite, the position of the conduction band for CuS was at a more negative than that of TiO; meanwhile, the position of the valence band for CuS was more positive than those for TiO, indicating a heterojunction structure belonging to type-II band alignment. Photocatalytic activity, measured by decomposition of methylene blue under visible-light irradiation (${\lambda}$ > 400 nm) for the $TiO_2/CuS$ nanocomposite, showed a value of 85.94% at 653 nm, which represented an improvement of 52% compared to that for single $TiO_2$ nanofiber (44.97% at 653 nm). Consequently, the photocatalyst with $TiO_2/CuS$ nanocomposite had excellent photocatalytic activity for methylene blue under visible-light irradiation, which could be explained by the formation of a heterojunction structure and improvement of the surface reaction by increase in surface area.