• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1192-1198
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• 1996

배선 재료나 salicide 트랜지스터에 적용될 것으로 기대되는 Cu 배선과 Co 단일층 및 Co/Ti 이중층을 사용하여 형성된 코발트 실리사이드간의 열적 안정성에 대하여 조사하였다. 40$0^{\circ}C$열처리후 Cu3Si 막이 CoSi2층과 Si 기판 사이에 형성되었는데, 이것은 Cu 원자의 확산에 기인한 것이다. $600^{\circ}C$에서의 열처리 후에 형성된 최종막의 구조는 각각 Cu/CoSi2/Cu3Si/Si과 TiO2/Co-Ti-Si 합금/CoSi2/Cu3Si/Si였으며, 상부에 형성된 TiO2층은 산소 오염에 의한 것으로 밝혀졌다.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.234-240
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• 2001

The diffusion barrier properties of TiN by using Cu(Mg) alloy film have been investigated. Cu(Mg) alloy film was deposited on air-exposed TiN film. Upon annealing, interfacial MgO of 100 $\AA$ has been formed due to the reaction of Mg with oxygen existed on the surface of TiN. Combined MgO/TiN structure prevented the interdiffusion of Cu and Si up to $800^{\circ}C$. To improve the adhesion of Cu(Mg) alloy film to the TiN, TiN layer was treated by $O_2$ plasma, followed by vacuum annealing at $300^{\circ}C$. It was found that increased oxygen on the surface of TiN film by plasma treatment enhanced segregation of Mg toward the interface, resulting in the formation of dense MgO layer. Improved adhesion characteristics have been formed through this treatment. However, increased power of $O_2$ plasma led to the formation of TiO$_2$ and decreased the Mg content to be segregated to the interface, resulting in the decrease in adhesion property. In addition, the deposition of 50 ${\AA}$ Si on the TiN enhanced the adhesion of Cu(Mg) alloy to TiN without deteriorating the TiN diffusion barrier characteristics.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.478-486
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• 1995

Cu/NbTi multilayer thin films and superconducting wires were fabricated and heat treated with conventional annealing and analyzed by differential scanning calorimetry (DSC) as a basic study for the enhancement of Jc. Interfacial reactions of Cu/NbTi multilayer thin films and superconducting wires were investigated with optical microscope, SEM, and XRD. According to the effective heat of formation (EHF) model, CU$\_$3/Ti was predicted as a first phase. However, considering the crystalline structure and thermodynamics, CuTi was predicted as a first phase. According to the results of DSC and XRD, CU$\_$2/Ti was found to be the first phase, followed by the formation Of CU$\_$4/Ti. The difference in first crystalline phase between the experimental result and the predicted one was discussed. In case of Cu/NbTi superconducting wires, the compounds formed at the Cu/NbTi interface grew with annealing time and the amount of compounds formed in Nb-47wt%Ti alloy was larger than that in Nb-50wt%Ti alloy. It seemed that the incubation time for the formation of compounds in Nb-50wt%Ti alloy was longer than that formed in Nb-47wt%Ti alloy. Also, the diffusion was the rate controlling step for the growth of compounds in all specimens. These compounds were formed at 500-600.deg. C for I hour annealing and, thus, the drawing time below I hour must be required to minimize the growth of compounds for the enhancement of Jc.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.45-47
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• 2004

We have investigated the microstructures and the mechanical properties of TiA1/Cerameti1721 (Ag-Cu-Ti insert metal)/AISI4140 joints at 800$^{\circ}C$ for 60 to 300s using induction brazing method. Two continuous reaction layers of AICuTi and AICu$_2$Ti were formed at the interface between the braze and TiAl, whose thickness increased with the brazing time. The braze consisted of Ag-rich, Ti-rich, CuTi and CuTi$_2$ phases. The maximum tensile strength achieved 296MPa, which was 71% of that of TiAl base metal, for the specimen bonded at 800$^{\circ}C$. Further increase of the brazing temperature and time resulted in constant deterioration of its bonding strength due to large amount of brittle IMC.

• Transactions of Materials Processing
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• v.18 no.4
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• pp.342-346
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• 2009

Forming characteristics for the bundle extrusion of Cu-Ti bimetal wires are investigated, which can identify the process conditions for weak mechanical bonding at the contact surface during the direct extrusion of a Cu-Ti bimetal wire bundle. Bonding mechanism between Cu and Ti is assumed as a cold pressure welding. Then, the plastic deformation at the contact zone causes mechanical bonding and a new bonding criterion for pressure welding is developed as a function of the principal stretch ratio and normal pressure at the contact surface by analyzing micro local extrusion at the contact zone. The averaged deformation behavior of Cu-Ti bimetal wire is adopted as a constitutive behavior at a material point in the finite element analysis of Cu-Ti wire bundle extrusion. Various process conditions for bundle extrusions are examined. The deformation histories at the three points, near the surface, in the middle and near the center, in the cross section of a bundle are traced and the proposed new bonding criterion is applied to predict whether the mechanical bonding at the Cu-Ti contact surface happens. Finally, a process map for the direct extrusion of Cu-Ti bimetal wire bundle is proposed.

• Journal of Environmental Science International
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• v.29 no.12
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• pp.1213-1222
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• 2020

In the current study, a Cu2O/TiO2 photoinduced nanocomposite materials prepared by ultrasonification method was evaluated the photocatalytic oxidation efficiency of volatile organic compounds (BTEX) under visible-light irradiation. The results of XRD confirmed the successful preparation of photoinduced nanocomposite materials. However, diffraction peaks belonging to TiO2 were not confirmed for the Cu2O/TiO2. The possible reason for the absence of Cu2O peak is their low content and small particle size. The result of uv-vis spectra exhibited that the fabricated Cu2O/TiO2 can be activated under visible light irradiation. The FE-SEM/EDS and TEM showed the formation of synthesized nanocomposites and componential analysis in the undoped TiO2 and Cu2O/TiO2. The photocatalytic oxidation efficiencies of benzene, toluene, ethylbenzene, and o-xylene with Cu2O/TiO2 were higher than undoped TiO2. According to light sources, the average oxidation efficiencies for BTEX by Cu2OT-0.5 were exhibited in the orer of 8 W day light > violet LEDs > white LEDs. However, the photocatalytic oxidation efficiencies normalized to supplied electric power were calculated to be in the following order of violet LEDs > white LEDs > 8 W day light, indicating that the LEDs could be a much more energy efficient light source for the photo-oxidation of gaseous BTEX using Cu2O/TiO2.

• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.29-35
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• 1994

The effects of coating of 3$\mu\textrm{m}$ thickness on the mechanical property of alumina after heat treatment at 100$0^{\circ}C$ for 30minutes under $10^{-6}$torr vacuum was quantified in terms of modulus of rupture(MOR) using Weibull plot. While the copper coating did not change MOR of alumina due to the nonwetting behavior of Cu on $Al_2O_3$, the reactive titanium metal coating caused a noticeable 29% reduction in averaged MOr strength. This was related with the combined effects of microcracks in coating formed during heat treatment and good bonding character between Ti and $Al_2O_3$. The effect of cosputtering of Ti and Cu, bilayer coatings of Cu/Ti and Ti/Cu were also investigated. It was found that Ti, cosputtered, Cu/ti and Ti/Cu coatings reduced MOR strength of alumina in the order listed. This was correlated with the amount of Ti at coating/alumina inter-face associated with a coated layer or segregation of Ti during heat treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.8
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• pp.844-851
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• 2005

The purpose of this study was to determine feasibility of application of regenerated or recycled $TiO_2$ on the successive treatment of Cu(II)-EDTA. The recovery of copper, the reuse of $TiO_2$ and the assessment of acute toxicity was studied in the total eight successive photocatalytic reactions. Aqueous solution of $10^{-4}\;M$ Cu(II)-EDTA was treated using an illuminated $TiO_2$ at pH 6 in a circulating reactor. Two different procedures were applied in the reuse of $TiO_2$: i) recycle of $TiO_2$ without acid wash ii) regeneration of $TiO_2$ with acid wash to remove adsorbed copper in a previous experiment. The averaged decomplexation rate constant($k'_{obs}$) of Cu(II)-EDTA in recycle of $TiO_2$ without acid wash was approximately 45% less than that in regeneration of $TiO_2$ with acid wash. Removal of Cu(II) was near complete after 180 minutes in the total eight successive photocatalytic reactions using the regenerated $TiO_2$ after acid wash. In contrast, removal of Cu(II) was minimum at total fifth successive photocatalytic oxidation using the recycled $TiO_2$ without arid wash. The recovered $TiO_2$ was approximately 86% in average in each procedure. The recovered Cu(II) was 67.9% in average. The acute relative toxicity of the treated water rapidly declined at an initial reaction time up to 60 minutes but little declination was observed after 60 minutes due to little degradation of DOC. Relative toxicity of treated water using the recycled $TiO_2$ without acid wash we some what well correlated with the concentration of dissolved Cu(II). From this work, it is suggested that Cu(II)-EDTA can be effectively treated using an integrated cyclic photocatalytic oxidation with recovery of $TiO_2$ and Cu(II).

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.20-23
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• 2011

Amorphous Ti-(50-x)Ni-xCu (at%) (x = 20, 25, 27, 30) alloy ribbons were prepared by melt spinning. Subsequently, the crystallization behavior of the alloy ribbons was investigated by X-ray diffraction and differential scanning calorimetry. ${\Delta}T$ (the temperature gap between $T_g$ and $T_x$) increased from 33 K to 47 K and the wavenumber ($Q_p$) decreased from 29.44 $nm^{-1}$ to 29.29 $nm^{-1}$ with increasing Cu content from 20 at% to 30 at%. The activation energy for crystallization decreased from 188.5 kJ/mol to 170.6 kJ/mol with increasing Cu content from 20 at% to 25 at%; afterwards, the activation energy remained near constant. Crystallization occurred in two-stage: amorphous-B2-$TiCu_2$ in Ti-Ni-Cu alloys with Cu content less than 25 at%, while it occurred in three-stage; amorphous-B2-TiCu-$TiCu_2$ in Ti-Ni-Cu alloys with Cu content more than 27 at%.