• 한국재료학회지
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• 제12권11호
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• 대한화학회지
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• 제57권4호
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• pp.483-488
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• 2013

$CuCl_2$로부터 용액합성법에 의해 CuO를 제조하였다. $CuCl_2$를 용액에 첨가하기 전에 용액내에 anatase형 $TiO_2$ 입자를 분산시켜 CuO가 형성되는 과정에서 $TiO_2$/CuO 결합입자를 합성하였다. 얻어진 $TiO_2$/CuO에 적당량의 글루코스를 가하여 반응시켜 CuO의 일부를 $Cu_2O$로 환원시켰다. 얻어진 시료 $TiO_2/Cu_xO$ (1$TiO_2/Cu_xO$ 복합체는 anatase와는 다르게 가시광선 전 영역에서 흡광이 발생했으며 당연한 결과로 태양광선에서 $TiO_2/Cu_xO$ 복합체의 광촉매 활성은 anatase $TiO_2$에 비하여 매우 뛰어난 것으로 나타났다. 또한 $TiO_2/Cu_xO$ 복합체의 항균성이 대단히 뛰어난 것으로 나타났다.

• 한국재료학회지
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• 제14권4호
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• 대한치과기공학회지
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• 제31권4호
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• pp.31-36
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• 2009

This study evaluated the grindability of series of Ti-Cu alloys in order to develop a Ti alloy with better grindability than commercially pure titanium(CP Ti). Experimental Ti-Xwt%Cu alloys(X=2, 5, 10) were made in an argon-arc melting furnace. Slabs of experimental alloys were ground using a SiC abrasive wheel on an electric handpiece at circumferential speed(15000, 30000rpm) by applying a force(250, 300gr). Grindability was evaluated by measuring the amount of metal volume removed after grinding for 2 minutes. Data were compared to those for CP Ti and Ti-6wt%Al-4wt%V alloy. From results, It was observed that the grindability of Ti-Cu alloys increased with an increase in the Cu concentration compared to CP Ti, particularly the 10wt%Cu alloy exhibited the highest grindability at all speeds. By alloying with Cu, the Ti exhibited better grindability at high speed. The continuous precipitation of $Ti_2Cu$ among the ${\alpha}$-matrix grains made this material less ductile and facilitated more effective grinding because small segments more readily formed. The Ti-10wt%Cu alloy has a great potential for use as a dental machining alloy.

• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• 한국재료학회지
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• 제14권12호
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• pp.829-834
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• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

• 대한치과기공학회지
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• 제31권3호
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• pp.9-14
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• 2009

This study evaluated the mechanical properties of Ti-Cu alloys with the hope of developing an alloy for dental casting with better mechanical properties than unalloyed titanium. Ti-Cu alloys with four concentrations of Cu(2,5,10wt%) were made in an argon-arc melting furnace. The microstructure and micro-Vickers hardness were determined. X-ray diffraction pattern test was performed on the polished specimens. The microstructure of 2%Cu and 5%Cu alloys are shown acicular ${\alpha}Ti$ phase formed on the surfaces of previously formed $\beta$grains. The 10%Cu alloys has essentially a eutectoid structure; this structure includes lamella of ${\alpha}Ti$ and $Ti_2Cu$ phase that transformed from ${\alpha}Ti$ at the eutectoid temperature. The micro-Vickers hardness of CP Ti specimens was significantly(p<0.05) lower than that of any of the other alloys. Among the Ti-Cu alloys, the 10%Cu alloys exhibited a significantly(p<0.05) higher hardness value. but lower than that of Ti-6%Al-4%V alloy. From these results, it was concluded that new alloys for dental castings should be designed as Ti-Cu based alloys if other properties necessary for dental castings were obtained.

• 대한치과기공학회지
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• 제27권1호
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• pp.65-71
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• 2005

Experimental Ti-13%Zr and Ti-13%Zr-5%Cu alloys were made in an argon-arc melting furnace. The grade 2 CP Ti was used to control. The alloys were cast into phosphate bonded $SiO_2$ investment molds using an argon-arc casting machine, and The hardness and microstructures of the castings were investigated in order to reveal their possible use for new dental casting materials and to collect useful data for alloy design. The hardness of the Ti-13%Zr-5%Cu alloy(379Hv) became higher than that of Ti-13%Zr(317Hv) alloy, and the hardness of this alloys became higher than that of CP Ti(247Hv). Increasing in the hardness of the Ti-13%Zr-5%Cu alloy was considered to be solid solution hardening as the Ti-Zr system shows a completely solid solution for both high temperature $\beta$phase and low temperature $\alpha$ phase and also the inclusion of the eutectoid structure($\alpha Ti+Ti_{2}Cu$). No martensitic structures are observed in the specimen made of CP Ti, but Ti-13%Zr and Ti-13%Zr-5%Cu alloys show a kind of martensitic structure. Ti-13%Zr-5%Cu shows the finest microstructure. From these results, it was concluded that new alloys for dental casting materials should be designed as Ti-Zr-Cu based alloys.

• 한국진공학회지
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• 제6권4호
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• pp.314-320
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• 1997

XPS를 이용하여 공기 중에 노출된 TiN박막과 상온 증착된 Cu사이의 계면에서의 화학적 반응과 전자 구조적인 변화를 조사하였다. Ti(2p), O(1s), N(1s), Cu(2p) core-level과 Cu LMM Auger line의 spectrum을 보면, Cu의 증착두께가 증가하여도 peak의 위치 뿐만 아니라 line shape이 전혀 변화하지 않는다. 그리고 XPS에 의한 valence bands를 보아도 전 혀 변화가 없다. 이것은 공기 중에 노출된 TiN박막과 Cu사이의 계면에서 Cu화합물의 어떠 한 형태도 존재하지 않을 뿐만 아니라 전자 구조적인 면에서도 전혀 변화가 없음을 의미한 다. 계면에서 Cu가 화학적 반응을 일으키지 않는 것은 계면접합력을 나쁘게 하는 요인이 된 다. 우리는 계면에서의 화학 반응 또는 전자구조의 변화에 대한 연구를 통하여 Cu와 TiN박 막의 계면접합력을 이해할 수 있었다.

• 한국재료학회지
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• 제16권10호
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.