• 제목/요약/키워드: TiC-Mo

검색결과 214건 처리시간 0.033초

Solvothermal 방법에 의한 $BaTiO_3$ 나노입자의 합성 (Synthesis of $BaTiO_3$ nanoparticle by a solvothermal method)

  • 여기호;문병기;손세모;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.732-734
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    • 2003
  • A solvothermal synthetic method to $BaTiO_3$ nanoparticle has been investigated in toluene solution with $BaTi(OR)_6$ as precursor. A precursor prepared from barium metal with toluene, isopropanol and titanium isopropoxide was used as a starting material. Weight ratio of precursor to solvent prepared in the mixture are 5/100, 10/100, 20/100 and 50/100wt%. At the weight ratio of 50/100wt%, $BaTiO_3$ butterfly twin crystalline(${\fallingdotseq}100nm$) was obtained after synthesis at $250^{\circ}C$ for 20hrs in an autoclave. X-ray diffraction and transmission electron microscopy showed that the product of 50/100wt% has crystallization. At 5/100, 10/100, and 20/100wt%, however, red colloidal solution was obtained after synthesis and crystalline phase of $BaTiO_3$ was not produced.

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졸-겔법으로 $LaNiO_3$ 전극에 증착된 $(Na_{0.5}Bi_{0.5})TiO_3$ 박막의 배향성 (Orientation of $(Na_{1/2}Bi_{1/2})TiO_3$ thin films deposited on $LaNiO_3$ electrodes by sol-gel methode)

  • 박민석;유영배;문병기;손세모;정수태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.894-897
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    • 2004
  • Sodum bismuth titanate $(Na_{0.5}Bi_{0.5}TiO_3$ or NBT) thin films coated on the $LaNiO_3$ (LNO) electrode by sol-gel methode and rapid thermal annealing (RTA) technique. The NBT (NBT/LNO/Si) thin films examined by x-ray diffraction (XRD). The orientation of NBT was observed for films coated at $900^{\circ}C$, 5 min and $600^{\circ}C$, 60 min. Filed emission scanning electron microscopy (FE-SEM) showed uniform surface composed of grains. The grain size of NBT thin films increased with increasing annealing temperature.

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Tio2 나노튜브의 열처리 온도에 따른 Anatase 상의 분포와 그에 따른 광 촉매 효율 (Distribution of Anatase Phase Depending on the Thermal Treatment Temperature of Tio2 Nanotubes and Its Effects on the Photocatalytic Efficiency)

  • 김세임;황지훈;이승욱;김락경;손수민;;양준모;양비룡
    • 한국세라믹학회지
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    • 제45권6호
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    • pp.331-335
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    • 2008
  • The purpose of this study is to characterize the photo-catalytic efficiency of $TiO_2$ nanotube with respect to the distribution of anatase phase which can be changed by the annealing temperature of $TiO_2$ nanotube. $TiO_2$ nanotube was fabricated by the anodization method in the 0.5 wt% HF electrolyte. And then the $TiO_2$ nanotube was annealed at temperatures ranging from $380^{\circ}C$ to $780^{\circ}C$ in dry oxygen ambient for 2 h. For the photo-catalytic water-splitting tests, the photocurrent density was measured as a function of applied potential with a potentiostat using a Ag/AgCl reference, Pt counter electrode, and 1 M KOH electrolyte under illumination of UV by a Xe arc lamp of 1 KW. According to the UV photo-catalytic water-splitting tests, the nanotube annealed at $560^{\circ}C$ was found to show the highest photocurrent density.

열간단조된 $\gamma$-TiAl 합금의 이방성에 관한 연구 (Anisotropy Studies on Hot-forged $\gamma$-TiAl Alloys)

  • 이재승;박노진;김성진;김승언;오명훈
    • 한국재료학회지
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    • 제10권9호
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    • pp.629-635
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    • 2000
  • 본 논문에서는 Ti-48.5at%Al-0.96at%Mo 조성을 갖는 $\gamma$-TiAl 합금은 항온 단조 및 후속 조직제어 열처리 시 발달하는 집합조직의 변화에 관해 연구하였다. 특히, 동적 재결정 후 조직제어 열처리 온도와 시간의 증가에 따라 발생하는 lamellar volume fraction 과 집합조직 변화에 주목하여 관찰하였다. 동적 재결정 후 집합조직은 ND$\perp${302) 선분과, TD$\perp${100) 및 이에 비해 상대적으로 다소 약한{111) 성분들이 발달하였으며, 열처리 온도와 시간이 증가함에 따라 lameller volume fraction 은 증가했고 동일한 성분의 집합조직도 점차 강하게 발달함을 알 수 있었다. 하지만 상온인장시험 결과는 lameller volume fraction이 증가할수록 낮은 상온 연신을 보였는데, 이는 준 층상조직을 갖는 $\gamma$-TiAl합금의 상온인장특성이 집합조직의 영향보다는 lameller volume fractio과 같은 미세조직 특성에 더욱 강하게 영향을 받기 때문인 것으로 판단된다.

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LaNiO3 전극위에 (100)으로 배향된 (Na0.5Bi0.5)TiO3 박막의 성장 (Growth of Highly (100) Oriented (Na0.5Bi0.5)TiO3 Thin Films on LaNiO3 Electrode)

  • 유영배;박민석;손세모;정수태
    • 한국전기전자재료학회논문지
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    • 제19권2호
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    • pp.176-180
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    • 2006
  • [ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

코팅공구의 제조에서 공정인자가 증착특성에 미치는 영향 (Effect of Process Parameters on Deposition Characteristics in Fabrication of Coated Tools)

  • 김종희
    • 한국표면공학회지
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    • 제28권6호
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    • pp.368-375
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    • 1995
  • Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

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$CeO_2$/$BaTiO_3$이중완충막을 이용한 YBCO 박막 제작 (Fabrication of YBCO Superconducting Film with $CeO_2$/$BaTiO_3$Double Buffer Layer)

  • 김성민;이상렬
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.959-962
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    • 2000
  • We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

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BST 세라믹 저온소결에 $Li_2CO_3$와 ZnBO가 미치는 영향 (Effective of $Li_2CO_3$ and ZnBO for low temperature sintered $(Ba_{0.5},Sr_{0.5})TiO_3$ ceramics)

  • 김세호;유희욱;구상모;하재근;이영희;고중혁
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.297-297
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    • 2007
  • The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

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Investigation of Effective Contact Resistance of ZTO-Based Thin Film Transistors

  • 강유진;한동석;박재형;문대용;신소라;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.543-543
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    • 2013
  • Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

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AIP법으로 형성된 TiAgN 코팅필름의 바이어스전압에 따른 표면 특성 분석 (Surface Characterization According to the Bias Voltage of the TiAgN Coating Film Layer Formed by the AIP Process)

  • 백민숙;윤동주;강병모;정운조;김병일
    • 한국재료학회지
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    • 제25권5호
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    • pp.253-257
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    • 2015
  • The implanting of metal products is performed with numerous surface treatments because of toxicity and adhesion. Recently, the surface modification of metal products has been actively studied by coating the surface of the TiC or TiN film. We prepared a Ti(10%)Ag Target which may be used in dental oral material by, using the AIP(arc ion plating) system TiAgN coating layer that was deposited on Ti g.23. The purpose of this study was to establish the optimal bias voltage conditions of the coated TiAgN layer formed by the AIP process. The TiAgN coatings were prepared with different bias voltage parameters (0V to -500V) to investigate the effect of bias voltage on their mechanical and chemical properties. The SEM(scanning electron microscope), EDS(energy dispersive X-ray spectrometer), XRD(X-ray diffraction), micro-hardness, and potentiodynamic polarization were measured and the surface characteristics of the TiAgN coating layers were evaluated. The TiAgN coating layer had different mechanical characteristics based on the bias voltage, which also showed differences in thickness and composition.