• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.399-402
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• 2000

For improvement of B constant in $CaMnO_3$-$CaTiO_3$ perovskite type thermistors, effect of $Cr_2$$O_3$ addition ranged from 0.0wt% to 5.0wt% on electrical properties were investigated with contents and sintering temperatures in the view of crystal and microstructures. The solubility limit of Cr$_2$O$_3$was up to 0.5wt% judging from the result of lattice parameter. The grain size was decreased and the resistance at room temperature and B constant were increased with the addition of $Cr_2$$O_3$.On particular, B constant of$CaMnO_{3-x}$$Cr_2$$O_3$ system was increased greatly from 1574k to 2598k at 0.5wt% $Cr_2$$O_3$addition. Further addition of $Cr_2$$O_3$, however, resulted in the decrease of the resistance and B constant due to the $Cr_2$$O_3$ precipitation on the grain boundary. As the$CaTiO_3$contents increased in the $CaMnO_3$-$CaTiO_3$ system, the resistance at room temperature and B constant were highly changed.

• Environmental Engineering Research
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• 제25권4호
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• pp.529-535
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• 2020

The present study investigated the photodegradation of synthetic organic dye; violet-3B, without and with the addition of C-N-codoped TiO₂ catalyst using a visible halogen-lamp as a light source. The catalyst was synthesized by using a peroxo sol-gel method with free-organic solvent. The effects of initial dye concentration, catalyst dosage, and pH solution on the photodegradation of violet-3B were examined. The efficiency of the photodegradation process for violet-3B dye was higher at neutral to less acidic pH. The kinetics reaction rate of photodegradation of violet-3B dye with the addition of C-N-codoped TiO₂ followed pseudo-first order kinetics represented by the Langmuir-Hinshelwood model, and increasing the initial concentration of dyes decreased rate constants of photodegradation. Photodegradation of 5 mg L^-1 violet-3B dye achieved 96% color removal within 240 min of irradiation in the presence of C-N-codoped TiO₂ catalyst, and approximately 44% TOC was removed as a result of the mineralization.

• 공업화학
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• 제28권6호
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• pp.705-713
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• 2017

독창적 물질인 $Bi_2WO_6-GO-TiO_2$ 나노복합체를 쉬운 수열법에 의해 성공적으로 합성하였다. 수열반응을 하는 동안, 그래핀 시트 위에 $Bi_2WO_6$와 $TiO_2$를 도포하였다. 합성한 $Bi_2WO_6-GO-TiO_2$ 복합체형 광촉매는 X-선 회절법(XRD), 주사전자현미경(SEM), 에너지 분산 X-선(EDX) 분석, 투과전자현미경(TEM), 라만분광법, UV-Vis 확산반사 분광법(UV-vis-DRS), 및 X-선 광전자분광기(XPS)에 의하여 특성화하였다. $Bi_2WO_6$ 나노입자는 불규칙한 dark-square block 나노 플페이트 형상을 보였으며, 이산화티탄 나노입자는 퀜텀 도트 사이즈로 그래핀 시트 위 표면을 덮고 있었다. 로다민 비의 분해는 농도감소의 측정과 함께 UV 분광법에 의하여 관찰하였다. 합성된 물질의 광촉매 반응은 Langmuir-Hinshelwood 모델과 띠 이론으로 설명하였다.

• 한국세라믹학회지
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• 제40권10호
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• pp.925-930
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• 2003

The dielectric polarizability-related factors contributing to the $\tau$$_{\varepsilon}$ have been analysed in terms of dielectric permittivity $\varepsilon$, Tolerance Factor (TF), and octahedron tilt angles in (1-x)CaTi $O_3$-x[A(B', B″) $O_3$] (A=Ca, La, Li, B'=Al, Fe, Mg, B″=Nb, Ta) and (S $r_{0.2}$C $a_{0.8}$)( $Ti_{1-x}$ Z $r_{x}$) $O_3$. All the compounds have the orthorhombic Pbnm structure except the end members A(B', B″) $O_3$ and the solid solutions of x$\geq$0.8. The additional dipole field effect is suggested as a dominant factor contributing to $\tau$$_{\varepsilon}$ in CaTi $O_3$-based ceramics having relatively large $\varepsilon$, which has not been generally considered in the previous reports dealing with the $\tau$$_{\varepsilon}$. This study has been focussed on delineating the dipole field effect on the $\tau$$_{\varepsilon}$ in comparison to the octahedron tilt effect in CaTi $O_3$-based ceramics.cs..cs.

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1538-1540
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• 2003

The composites were fabricated respectively 61vol.% ${\beta}$-SiC and 39vol.% $TiB_2$ spray-dried powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at $1700^{\circ}C,\;1750^{\circ}C\;1800^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the Young's modulus and fracture toughness showed respectively the highest value of 92.97%, 92.88Gpa and $4.4Mpa{\cdot}m^{1/2}$ for composites by pressureless annealing temperature $1700^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of $8.09{\times}10^{-3}{\Omega}{\cdot}cm$ for composite by pressureless annealing tempe rature $1700^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the SiC-$TiB_2$ composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.173.1-173
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• 2000

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.310-310
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• 2005

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 추계학술강연 및 발표대회
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• pp.43-43
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.