• Progress in Superconductivity
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• 제9권1호
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제14권2호
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• pp.24-27
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• 2012

The superconducting coil system is one of the most important components in Korea Superconducting Tokamak Advanced Research (KSTAR), which has been operated since 2008. $Nb_3Sn$ and NbTi superconductors are being used for cable-in-conduit conductors (CICCs) of the KSTAR toroidal field (TF) and poloidal field (PF) coils. The CICCs are cooled by forced-flow supercritical helium about 4.5 K. The temperature, pressure and mass flow rate of the supercritical helium in the CICCs are interacting with each other during the operation of the coils. The complicate behaviors of the supercritical helium have an effect on the operation and the efficiency of the helium refrigeration system (HRS) by means of, for instance, pressure drop. The hydraulic characteristics of the supercritical helium have been monitored while the TF coils have stably achieved the full current of 35 kA. In other hands, the PF coils have been operated with various pulsed or bipolar mode, so the drastic changes happen in view of hydraulics. The heat load including AC loss on the coils has been analyzed according to the measurement. These activities are important to estimate the temperature margin in various PF operation conditions. In this paper, the latest hydraulic behaviors of PF coils during KSTAR operation are presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Journal of Welding and Joining
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• 제18권2호
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• pp.176-176
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• 2000

Recently developed Austenite stainless steel,309L was to overlay on 3Cr-1Mo-V-Ti-B steels, using Electroslag welding process, which wide electrodes were adopted. Transition region in welding interlayer relating to disbonding crack was investigated. Also. the effect of welding condition on the width of transition region and coarsening grains of the austenite were studied.1) With increasing welding speed the width of martensite at transient region was increased, but the amount of delta ferrite in weld metal was reduced, being fine grained.2) The form of martensite at the transition region was occured by reversible transition region, leading to increasing Ms point.3) With increasing welding speed, the grain of austenite formed at the welding interface was finer. With increasing welding current under the same welding speed, the grain size of the austenite was finer. At high current, original grain size of the austenite is coarse, but the austenite has fine grains because the austenite was transformed to martensite during cooling.4) In the case of high welding speed, the width of martensite at the welding interface was increased, but the grain size of austenite at the welding interface was finer. This indicates that the inhibition of disbonding crack may be achieved through dispersening fine carbides in the grain boudary.(Received August 3, 1999)

• Journal of Welding and Joining
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• 제18권2호
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• pp.49-56
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• 2000

Recently developed Austenite stainless steel, 309L was used to overlay on 3Cr-1Mo-V-Ti-B steels, using Electroslag welding process, which wide electrodes were adopted. Transition region in welding interlayer relating to disbonding crack was investigated. Also, the effect of welding condition on the width of transition region and coarsening grains of the austenite were studied. 1) With increasing welding speed the width of martensite at transient region was increased, but the amount of delta ferrite in weld metal was reduced, being fine grained. 2) The form of martensite at the transition region was occurred by reversible transformation during cooling since the interdiffusion of Cr and Ni from weld metal and Fe and C from base metals at the transition region, causes to lowering the concentration of Cr and Ni at the transition region, leading to increasing Ms point. 3) With increasing welding speed, the grain of austenite formed at the welding interface was finer. With increasing welding current under the same welding speed, the grain size of the austenite was finer. At high current, original grain size of the austenite is coarse, but the austenite has fine grains because the austenite was transformed to martensite during cooling. 4) In the case of high welding speed, the width of martensite at the welding interface was increased, but the grain size of austenite at the welding interface was finer. This indicates that the inhibition of disbonding crack may be achieved through dispersening fine carbides in the gain boundary.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 임시총회 및 하계학술연구발표회
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• 한국진공학회지
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• 제15권2호
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• pp.173-179
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• 2006

Pulsed laser deposition 방법으로 증착한 $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT)박막의 구조적, 전기적 성질에 대한 연구를 하였다. PZT 박막은 $LaAlO_3$ 기판위에 동일한 조건으로 증착된 $LaMnO_3$ (LMO) 산화물을 하부 전극으로 하여 증착시간을 변화시키며 증착하였다. High-resolution x-ray diffraction 결과를 통해 LMO 하부 전극과 PZT 박막이 방향성 있게 자란 것을 확인할 수 있었고 박막의 두께는 field-emission scanning electron microscope을 통하여 측정할 수 있었다. 또한 우리는 atomic force microscopy을 이용하여 박막의 표면 거칠기를 구하였고 국소적인 범위의 전기적 특성은 piezoelectric force microscopy 모드를 이용하여 측정하였다. 그 결과 PZT/LMO 구조는 나노 스토리지의 미디어로 쓰이기 위해 필요한 성질들을 갖추었음을 알 수 있었다.

• Progress in Superconductivity
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• 제9권1호
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• pp.23-28
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• 2007

In order to have a superconductive connection between the wire-wound pickup coil and input coil, typically Nb terminal blocks with screw holes are used. Since this connection structure occupies large volume, large stray pickup area can be generated which can pickup external noise fields. Thus, SQUID and connection block are shielded inside a superconducting tube, and this SQUID module is located at some distance from the distal coil of the gradiometer to minimize the distortion or imbalance of uniform background field due to the superconducting module. To operate this conventional SQUID module, we need a higher liquid He level, resulting in shorter refill interval. To make the fabrication of gradiometers simpler and refill interval longer, we developed a novel method of connecting the pickup coil into the input coil. Gradiometer coil wound of 0.125-mm diameter NbTi wires were glued close to the input coil pads of SQUID. The superconductive connection was made using an ultrasonic bonding of annealed 0.025-mm diameter Nb wires, bonded directly on the surface of NbTi wires where insulation layer was stripped out. The reliability of the superconductive bonding was good enough to sustain several thermal cycling. The stray pickup area due to this connection structure is about $0.1\;mm^2$, much smaller than the typical stray pickup area using the conventional screw block method. By using this compact connection structure, the position of the SQUID sensor is only about 20-30 mm from the distal coil of the gradiometer. Based on this compact module, we fabricated a magnetocardiography system having 61 first-order axial gradiometers, and measured MCG signals. The gradiometers have a coil diameter of 20 mm, and the baseline is 70 mm. The 61 axial gradiometer bobbins were distributed in a hexagonal lattice structure with a sensor interval of 26 mm, measuring $dB_z/dz$ component of magnetocardiography signals.

• Journal of Plant Biotechnology
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• 제37권1호
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• pp.102-109
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• 2010

Fructan은 식물이 저온에 노출 되었을 때 다양한 조직에 축적됨으로써 여러 스트레스에 저항을 나타내는 것으로 알려져 있다. 본 연구에서는 fructan 생합성 경로에 관여하는 효소인 1-sst와 1-fft 유전자를 돼지감자 구근으로 부터 분리하였다. 분리한 1-sst와 1-fft 유전자는 Ti-plasmid vector인 KJG V-B2 vector에 35S promoter에 의해 발현할 수 있도록 형질전환용 벡터를 구축하였다. Agrobacterium tumefaciens법에 의해 1-sst와 1-fft 유전자의 형질전환 벼를 육성하였고, 1-sst, 1-fft 및 HPT 유전자 특이적인 primer를 사용하여 PCR 분석한 결과 유전자가 벼의 callus 게놈내에 안정적으로 삽입되었음을 확인하였다. 또한 Southern 및 RT-PCR 분석에서도 같은 결과를 얻었다. 형질전환 벼의 후대에서도 안정적으로 유전자가 발현되는 homo 계통을 선발하였고 이를 이용해 1-sst와 1-fft 유전자의 삽입이 확인된 형질전환 벼에서 유전자의 발현양상을 알아보기 위해 RT-PCR 및 Real-Time PCR를 수행한 결과 형질전환 벼에서 1-sst와 1-fft 유전자 모두 안정적으로 발현되고 있음을 확인하였다. 또한 1-sst와 1-fft 유전자가 삽입된 형질전환 벼를 이용한 기능 분석 연구를 통해 식물체가 저온에 노출되었을 때 1-sst와 1-fft의 작용에 의해 fructan 생합성량이 증가됨을 알 수 있었다. 따라서 본 연구를 통해 얻어진 fructan 생합성 관련 유전자가 삽입된 형질전환 벼는 탄수화물대사 및 저온, 건조 등의 환경 stress에 대한 내성에 대해 좋은 육종 소재로 이용 가능할 것으로 사료된다.

• 한국재료학회지
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• 제19권1호
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.