• 열처리공학회지
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• 제9권2호
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• pp.121-129
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• 1996

The solubility of Ti in Al matrix was determined by X-ray diffraction method on two different mechanical alloying systems, i.e Al+$Al_3Ti$ and Al+Ti alloys. Starting powder compositions of two systems were chosen for final volume fraction of $Al_3Ti$ phase being 25%. The solubility of Ti in ${\alpha}$-Al was estimated by the lattice parameter measurement of Al. For Al+$Al_3Ti$ mixture, it appeared that some of $Al_3Ti$ particles decomposed during milling and maximum solubility of Ti in Al was about 0.99%. The majority of $Al_3Ti$ particles were dispersed uniformly in Al matrix, having approximate size of 100~200 nm. On the other hand, higher Ti solubility of 1.24 wt.% was found in Al+Ti system, with starting composition of Al+10 wt.%Ti. After 15 hours of milling, Ti phase was identified as 20 nm sized particles embedded in Al matrix. The annealing of mechanically alloyed powders from Al+$Al_3Ti$ and Al+10 wt.%Ti systems was followed in the temperature range of 200 to $600^{\circ}C$ to study thermal stability of supersaturated solution of Al(Ti). After annealing, the lattice parameter of Al reverted back to that of pure Al, and the peak intensity ratio of $Al_3Ti$/Al was increased more than the original value before annealing. These results suggest that Ti dissolve into alpha-Al solutions during milling, and by annealing, $Do_{22}-Al_3Ti$ phase forms from Al(Ti) solution.

• 한국재료학회지
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• 제18권10호
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.192-192
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• 2014

TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

• 한국재료학회지
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• 제10권1호
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• pp.90-96
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 배향성 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로서 sputtering 방식으로 증착되는 Ti와 TiN이 적층된 구조인 Ti/TiN이 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하였고, $400^{\circ}C,\;N_2$ 분위기에서 열처리하면서 면저항의 변화를 조사하였다. Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 10nm 이상이면 우수한 Al <111> 배향성을 나타냈으며 Al-Ti 반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. Ti와 Al사이에 TiN을 적용함에 의해 Al <111> 배향성은 나빠지나 Al-Ti 반응에 의한 면저항의 증가는 억제할 수 있었다. Ti/TiN underlayer의 경우, 우수한 Al <111> 배향성을 확보하기 위한 Ti의 최소두께는 20nm이었고, Al-Ti 반응을 억제하기 위한 TiN의 최소두께는 20nm이었다.

• 한국세라믹학회지
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• 제40권1호
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• pp.87-92
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• 2003

출발 물질로 TiCx(x=0.67)와 Al 분말을 사용하여 800~150$0^{\circ}C$ 온도 구간에서 상압 또는 가압 반응으로 Ti$_3$AlC$_2$를 합성하였다. 출발 물질로 TiCx(x=0.67)와 Al 분말을 사용한 반응 합성에서는 Ti-Al intermetallic compound 또는 Al-C compound와 같은 중간 형성물은 형성되지 않았으며 Ti$_3$AlC$_2$을 합성할 수 있었다. TiCx(x=0.67)와 용융 Al의 직접 반응으로 80$0^{\circ}C$에서는 Ti$_2$AlC 상이 합성되었으며, 1200~150$0^{\circ}C$ 반응온도 구간에서는 Ti$_3$AlC$_2$ 상이 우선적으로 합성되었다. 저온에서 합성된 Ti$_2$AlC 상은 고온에서 TiC와 반응으로 Ti$_3$AlC$_2$ 상으로 합성되었다. 본 연구에서는 출발 물질로 TiCx와 Al을 사용한 Ti$_3$AlC$_2$ 상의 합성기구를 제시하였다. 합성된 Ti$_3$AlC$_2$의 미세구조는 Ti$_3$AlC$_2$ 상으로 이루어진 결정립이 45~120nm크기로 적층된 구조를 갖는다.

• 열처리공학회지
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• 제18권5호
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 춘계학술발표회 초록집
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• pp.5-5
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• 1999

A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

• 열처리공학회지
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• 제9권3호
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• pp.219-227
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• 1996

The purpose of this research is to develop the technology for the synthesis of (Ti,Al)N powder, which shows simultaneously the excellent properties of TiN and AlN, from the Ti-Al intermetallic compounds by the direct nitriding method. The effects of variables such as temperature, Ti-Al intermetallic compounds ($TiAl_3$, TiAl and $Ti_3Al$) were investigated by TG, XRD and SEM. The (Ti,Al)N powder can be easily synthesized from the intermetallic compounds by the direct nitriding method. Among the intermetallic compounds, the nitriding behavior increased with TiAl> $Ti_3Al$ > $TiAl_3$, as the difference of diffusion coefficient for nitrogen in each materials. The ternary nitride such as $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the direct nitriding method, although the ternary nitride coexist with TiN and AlN. The ternary nitrides are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN and AlN above $1400^{\circ}C$.

• 한국재료학회지
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• 제25권8호
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• pp.398-402
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• 2015

Fundamental studies of microstructural changes and high temperature deformation of titanium aluminide (TiAl) were conducted from the view point of the effect of Al content in order to develop the manufacturing process of TiAl. Microstructures in an as cast state consisted mainly of lamellar structure irrespective of Al content. By homogenization at 1473 K, the microstructures of Ti-49Al and Ti-51Al were transformed into an equiaxial structure which was composed of ${\gamma}$-TiAl, while the lamellar structure that was observed in Ti-46Al and Ti-47Al was much more stable. We found that the reduction of Al content suppressed the formation of equiaxial grains and resulted in a microstructure of only a lamellar structure. On Ti-49Al and Ti-51Al, dynamic recrystallization occurred during high temperature deformation, and the microstructure was transformed into a fine equiaxial one, while the microstructures of Ti-46Al and Ti-47Al contained few recrystallized grains and consisted mainly of a deformed lamellar structure. We observed that on the low-Al alloys the lamellar structure under hard mode deformation conditions deformed as kink observed B2-NiAl. High temperature deformation characteristics of TiAl were strongly affected by Al content. An increase of Al content resulted in a decrease of peak stress and activation energy for plastic deformation and an increase of the recrystallization ratio in TiAl.

• 한국세라믹학회지
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• 제31권8호
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• pp.849-860
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• 1994

The microstructural evolution and crystalline phases of this infiltration of Ti+Al liquids in TiC, SiC, TiC+C, and SiC+C preforms have been investigated. As the Ti and Al mixing ratio in Ti+Al infiltrated liquid changes, the newly formed reaction products, which were reacted from the Ti+Al liquid with preforms, consisted of three major phases as Ti3AlC, Al2Ti4C2 or Al4C3. The TiC grain shape was changed to spheroid, when Ti3AlC was formed. In case of Al2Ti4C2 formation, the platelet grain was formed from the original TiC grain. When Al4C3 was formed, nodular or intergranular fine-grained Al4C3 was formed around the TiC grain, while the original TiC grain shape was not changed.