• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.101-105
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• 2006

We fabricated the nano $TiN_x$ by making of reaction between titanium powder and $Si_3N_4$ during planetary milling. The $TiN_x$ powder was sintered by spark plasma sintering machine after mixing with 50 wt% of titanium powder, and the sintered body was heat-treated at $850^{\circ}C$ in order to investigate its hardness property at the elevated temperature. We analyzed crystal structure by XRD. We observed the peaks of $TiN_{0.26}$ and TiN after 10 hours milling, and we observed TiN peak mainly after 20 hours milling. The reacted particle size distribution was investigated by FE-SEM. Increase of milling time, the size of reacted particles was decreased and the $10{\sim}20nm$ size of $TiN_x$ on the surface of titanium and $TiN_x$ was observed after 20 hours milling. The micro-Vickers hardness of mixed sintered body was about $1050kgf/mm^2$.

• Bulletin of the Korean Chemical Society
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• v.25 no.11
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• pp.1661-1666
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• 2004

The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti($O^iPr)_2(CH_3COCHCONEt_2)_2$ (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and $^1H/^{13}C$ NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis($CONEt_2$), trans($COCH_3$) configuration (1a) in a distorted octahedral environment. Variable-temperature $^1H$ NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20$^{\circ}C$ in toluene-$d_8$ solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500$^{\circ}C$ under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500$^{\circ}$ using a bubbler-based MOCVD method.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.809-812
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• 2004

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Macromolecular Research
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• v.17 no.5
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• pp.346-351
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• 2009

$TiCl(O-i-Pr)_3/SiO_2$ and $Ti(O-i-Pr)_4/SiO_2$ were prepared by immobilizing chlorotitanium (IV) isopropoxide ($TiCl(O-i-Pr)_3$) and titanium (IV) isopropoxide ($Ti(O-i-Pr)_4$), to pretreated silica. The effect of the polymerization reaction conditions on the catalytic activity and characteristics of the resulting PLA were investigated. The catalytic conversion, molecular weight and polydispersity index (PDI) of the PLA produced on the titanium alkoxide supported catalysts increased proportionally with the reaction temperature. When the PLA was synthesized in bulk polymerization, the PLA produced with the supported catalysts had higher molecular weight than those with homogeneous catalysts. The melting temperature of the polymer produced with silica supported alkoxide catalysts was approximately $170-180^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.423-428
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• 2015

The machinability of materials is an important factor in engineering applications. Many ceramic components that have complex shapes require machining, typically using diamond tools, which leads to high production cost. Machinable ceramics containing h-BN have recently been developed, but these materials are very expensive because of high cost of raw materials and machining. Therefore the development of low-cost machinable ceramics is desirable. In this study, mullite-$ZrO_2$ ceramics were prepared additions of $Al_2TiO_5$. $ZrSiO_4$, $Al_2O_3$, and $Al_2TiO_5$ powders mixed at various molar ratios with sintering at 1400, 1500, and $1600^{\circ}C$ for 1 hr. Phase formation and microstructure of the sintered ceramics were observed by XRD and SEM, respectively. The machinability of each specimen was tested using the micro-hole machining method. The machinability results show that the ceramics sintered at temperatures over $1500^{\circ}C$ can be used as good low-cost machinable mullite-$ZrO_2-Al_2TiO_5$ ceramics.

• The Journal of Engineering Research
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• v.1 no.1
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• pp.15-22
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• 1997

The crystallization behaviours of cordierite gel derived from sol-gel method and glass prepared from conventional melting method with or without $TiO_2$ as nucleants are compared. The densification temperature of gel is $810^{\circ}C$ and its chemical structure identified by IR analysis is same as that of glass melted by conventional method. The beginning crystallization temperature of gel is $965^{\circ}C$ lower than that of melted glass with 10wt% $TiO_2$, which is $978^{\circ}C$. The crystalline phases developed from gel during heat treatment are identified as spinel, $\beta$-quartz solid solution and $\alpha$-cordierite crystal and crystalline phases in case of glass are (Mg,Al)TiOn and $\beta$-quartz solid solution and $\alpha$-cordierite crystal, respectively. The crystallization in melted glass with nucleants occurs through bulk crystallization and in case of that without nucleants surface crystallization occurs, while the crystallization in gel is internal crystallization from interface between particles formed after densification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.718-721
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• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.