• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.836-839
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• 2001

Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.

• 한국세라믹학회지
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• 제19권4호
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• pp.281-286
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• 1982

The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• 대한기계학회논문집
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• 제18권7호
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• pp.1713-1721
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• 1994

Intermetallic-matrix composites(IMCs) have the potential of combing matrix properties of oxidation resistance and high temperature stability with reinforcement properties of high specific strength and modulus. One of the major limiting factors for successful applications of these composite at high temperatures is the formation of interfacial reactions between matrix and ceramic reinforcement during composite process and during service. The purpose of the present investigation is to develop a better understanding of the nature of creep fracture mechanisms in a $Ni_{3}Al$ composite reinforced with both $TiB_{2}$ and SiC particulates. Emphasis is placed in the roles of the products of the reactions in determining the creep lifetime of the composite. In the present study, creep rupture specimens were tested under constant ranging from 180 to 350 MPa in vacuum at $760^{\cric}C$. The experimental data reveal that the stress exponent for power law creep for the composite is 3.5, a value close to that for unreinforced $Ni_{3}Al$. The microstructural observations reveal that most of the cavities lie on the grain boundaries of the $Ni_{3}Al$ matrix as opposed to the large $TiB_{2}/Ni_{3}Al$ interfaces, suggesting that cavities nucleate at fine carbides that lie in the $Ni_{3}Al$ grain boundaries as a result of the decomposition of the $SiC_{p}$. This observation accounts for the longer rupture times for the monolicthic $Ni_{3}Al$ as compared to those for the $Ni_{3}Al/SiC_{p}/TiB_{2} IMC$. Finally, it is suggested that creep deformation in matrix appears to dominate the rupture process for monolithic $Ni_{3}Al$, whereas growth and coalescence of cavities appears to dominate the rupture process for the composite.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1829-1831
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_3O_{12}$(BNdT) thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying post-annealing temperatures. Increasing post-annealing temperature, the (117) peak was increased. An increase of rod type grains of BNdT films with increasing post-annealing temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with post-annealing temperature of $700^{\circ}C$ were 418 and 0.37, respectively.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.599-603
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• 2003

Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was 56$\mu$C/$\textrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$\times$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• 전기학회논문지
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• 제57권11호
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.545-550
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• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• 한국세라믹학회지
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• 제45권3호
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• pp.150-156
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• 2008

Pitch-binded activated carbon fiber(ACF)/$TiO_2$ composite photocatalysts were prepared by Carbon Tetra Chloride (CTC) solvent mixing method with different mixing ratios of anatase to ACF. The result of the textural surface properties demonstrated that there is a slight increase in the Brunauer, Emmett and Teller (BET) surface area of composites with an increase of the amount of ACF. The surfaces structure morphologies of the composites were observed using an Scanning Electron Microscope (SEM). In the XRD patterns for all ACF/$TiO_2$ composites, the diffraction peaks showed the formation of anatase crystallites. The EDX spectra showed the presence of C, O and Si with strong Ti peaks. Most of these samples were richer in carbon and major Ti metal than any other elements. From the photo-decomposition results, the excellent activity of the ACF/$TiO_2$ composites between c/$c_0$ for methylene blue and UV irradiation time could be attributed to both the effects of the photocatalysis of the supported $TiO_2$ and adsorptivity of activated carbon fiber and another carbon derived from pitch.

• Progress in Superconductivity
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• 제10권1호
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.