• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1998년도 춘계학술대회 및 발표대회 강연 및 발표논문 초록집
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• pp.6-6
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• 1998

In 1957, the first magnetic disk drive compatible with a movable head was introduced as an external file memory device for computer system. Since then, magnetic disks have been improved by increasing the recording density, which has brought about the development of a high performance thin film magnetic head. The thin film magnetic head has a magnetic circuit on a ceramic substrate using IC technology. The physical property of the substrate material is very important because it influences the tribology of head/disk interface and also manufacturing process of the head. $Al_{2}O_{3}$-TiC ceramics, so called ALTIC, is known to be one of the best substrate materials which satisfies this property requirement. Even though the head is not in direct contact with the disk, frequent instantaneous contacts are unavoidable due to its high rotating speed and the close gap between them. This may cause damage in the magnetic recording media and, thus, it is very important that the magnetic head has a good wear resistance. $Al_{2}O_{3}$-TiC ceramics has an excellent tribological property in head/disk interface. Manufacturing process of thin film head is similar to that of IC, which requires extremely smooth and flat surface of the substrate. The substrate must be readily sliced into the heads without chipping. $Al_{2}O_{3}$-TiC ceramics has excellent machineability and mechanical properties. $Al_{2}O_{3}$-TiC ceramics was first developed at Nippon Tungsten Co. as cutting tool materials in 1968, which was further developed to be used as the substrate materials for thin film head in collaboration with Sumitomo Special Metals Co., Ltd. in 1981. Today, we supply more than 60% of the substrates for thin film head market in the world. In this paper, we would like to present the sintering process of $Al_{2}O_{3}$-TiC ceramics and its property in detail.

• 한국세라믹학회지
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• 제35권10호
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• pp.1061-1069
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• 1998

The thermal instability of Al2TiO5 Ceramics was contrlled by solid solution with MgO SiO2 and ZrO2 through electrofusion in an arc furnace. The thermal expansion properties of Al2TiO5 composites show the hysteresis due to the strong anisotropy of The crystal axes of these material. These phenomena are ex-plained by the opening and closing of microcracks. The difference in microcracking temperatures e.g 587.6(ATG2), 405.9(ATG3) and 519.7$^{\circ}C$(ATG4) is caused by the difference in grain size and stabilizer type. The thermal shock behaviour under cyclic conditions between 750-1400-75$0^{\circ}C$ show no change in mi-crostructure and phase assemblage for all three stabilized specimens. After the thermal loading test at 110$0^{\circ}C$ for 100hrs. ATG1 and ATG2 materials decomposes completely to its components corundum and ru-tile in both cases. However with approximatelly 20% retention of the Al2TiO5 Thus in order to prevent decomposition of the stabilized material in the critical temperature range 800-130$0^{\circ}C$ it must be traversed within a short period of time.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권2호
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• pp.80-84
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• 2003

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• 한국결정학회지
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• 제5권2호
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• pp.85-92
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• 1994

펄스 레이저 증착법을 이용하여 강유전체 Bi4T13012 박막을 laA109(001) 위에 성장시켰다. 넓은 영역의 온도에서 증착한 박막의 상 형성과 구조적 성질을 X선 회절법을 이용하여 조사하였다. 740℃에서 증착한 박막은 박막의 c-축이 기판에 수직한 형태의 에피 성장의 경향을 보인다. 펄스 레이저 증착법을 이용하여 Bi4Ti3O12/YBa2Cu3O7-x/LaAlO3 복합구조를 in-situ 성장시켰다. Yba2Cu3O7-x의 a-, b-축이 LaAlO3와 완벽하게 평행하게 배열되어 있지 않음에도 불구하고, Bi4Ti3012 박막은 에피 성장의 경향을 보인다.

• 한국분말재료학회지
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• 제2권1호
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• pp.36-43
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• 1995

Rapidly solidified and mechanically alloyed Al-Ti base alloys were prepared by gas atomization and attritor milling separately. The gas atomized and the mechanically alloyed powders were consolidated after preheating at $450^{\circ}C$, and then heat treated isochronally for 1 hour to observe the microstructures and to investigate the mechanical properties. Stable phases of precipitates in the Al-Ti-Si and the Al-Ti-Zr alloys were identified as DO22-$(Al,Si)_3Ti$ and $Do_{23}-Al_3(Ti, Zr)$ each. Among the alloys, the mechanically alloyed Al-l0Ti-2Si alloy showed superior thermal stability and mechanical properties at elevated temperature. The additions of third elements, such as Si and Zr, to Al-Ti alloys seemed to improve the mechnical properties remarkably by stabilizing the microstructure and the precipitate phases in the consolidated alloys.

• 한국재료학회지
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• 제14권9호
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• pp.614-618
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• 2004

Alloys of $Ti46\%Al-2\%Mo-2\%Nb$ were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The alloys displayed good oxidation resistance due mainly to the beneficial effects of Mo and Nb. The oxide scales formed consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_{2}O_3-rich$ layer, and an inner mixed layer of ($TiO_{2}+Al_{2}O_3$). Molybdenum and niobium dissolved in the scale effectively improved oxidation resistance. They were mainly distributed in the inner mixed layer of ($TiO_{2}+Al_{2}O_3$).

• 한국재료학회지
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• 제18권1호
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• pp.22-25
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• 2008

In this study, calcium titanate $(CaTiO_3)$ gel was prepared by mixing calcium nitrate and titanium isopropoxide in 2-methoxy-ethanol. $CaTiO_3$ gel was single-layer coated on Ti-6Al-4V using a sol-gel dip-coating technique. The coating was calcined at $750^{\circ}C$ in air by utilizing a very slow heating rate of $2^{\circ}C/min$. The crystalline phases of the coating were characterized by x-ray diffraction using a slow scan rate of $1^{\circ}/min$. The morphology of the coating was analyzed by scanning electron microscopy. The corrosion behavior of Ti-6Al-4V samples coated with $CaTiO_3$ films were tested in an artificial saliva solution by potentiodynamic polarization and were quantified by the Tafel extrapolation method. The electrochemical parameters showed a considerable increase in the corrosion resistance for the $CaTiO_3$-coated Ti-6Al-4V samples compared to bare substrates.

• 열처리공학회지
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• 제9권3호
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• pp.177-186
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• 1996

Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN or TiC surface-alloyed layer with high hardness on the substrate by injecting reaction gas($N_2$ or $CH_4$). Laser surface alloying by means of process control is in many applications essential in order to obtain predictable hardening layer. This research has been investigated the effect of such parameters on TiN and TiC gas alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum surface hardness of TiN layer was obtained 1750Hv on the conditions of 0.8kW laser power, 0.8m/min scanning speed and 100% $N_2$ atmosphere. However, the maximum hardness of TiC formation layer after laser treatment was about 630Hv. As scanning speed was increased, the hardness and depth of these layers were decreased at constant laser power.

• 한국세라믹학회지
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• 제46권5호
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• pp.467-471
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• 2009

Effects of boron and carbon on the densification and thermal decomposition of an AlN-SiC-$TiB_2$ system were investigated. $SiO_2$ was mostly removed by the addition of carbon, while $Al_2O_3$ formed $Al_4O_4C$ and promoted the densification of the systems above $1850^{\circ}C$. Rather porous specimens were obtained without the additives after hot pressing at $2100^{\circ}C$, while densification was mostly completed at $2000^{\circ}C$ by using the additives. The sintering temperature decreased further to $1950^{\circ}C$ by applying spark plasma sintering. The additives promoted the shrinkage of AlN by forming a liquid phase which was originated from the carbo- and boro-thermal reduction of $Al_2O_3$ and AlN.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.