• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.815-822
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• 1994

Sessile drop studies of molten Al on single crystal sapphire substrate were conducted to understand the wetting behavior and interfacial reaction at Al/Al2O3 interface. To investigate the wetting mechanism, the variation in contact angle was determined with time. The contact angle obtained in this study decreased exponentially with time. This result means that the driving force for wetting is the reduction in interfacial energy between liquid Al and sapphire caused by the interfacial reaction. The closer examination revealed that the reaction was the dissolution of sapphire by molten Al. Ti has been frequently used to improve wetting on ceramic materials. Therefore, the influence of Ti content on the wetting behaviour was investigated in this work. The equilibrium wetting angles of pure Al, Al-0.3 wt%Ti, and Al-1.0 wt%Ti at 100$0^{\circ}C$ were 63$^{\circ}$, 59$^{\circ}$, and 54$^{\circ}$respectively. The difference is considered as the result of the change in interfacial energy caused by the reaction between Ti and sapphire and the interfacial reaction formed the reaction products of varying stoichiometry (TiO, Ti2O3, TiO2 etc.).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.510-515
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

• Journal of Powder Materials
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• v.10 no.1
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• pp.15-20
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• 2003

Hybrid $A1_2O_3-TiC$ ceramic particle reinforced 6061 and 5083 Al composite powders were prepared by the combination of twin rolling and stone mill crushing process, followed by consolidating processes of cold compaction, degassing and hot extrusion. The composite bar consists of lamellar structure of ceramic particle rich area and matrix area, in which the hybrid was decomposed into each TiC of about $3-4\mutextrm{m}$ and $AI_2O_3$ particles of about $1-2\mutextrm{m}$ in diameter. It also found that fine $Mg_2Si$ precipitates of about 30 nm were embedded in the matrix, which have grains of about 3 $\mutextrm{m}$. Higher UTS was measured at the 5083 composite bar compared to the conventionally fabricated composite, due to again refinement effect by the rapid solidification. No particle was shown to form in the interface between the matrix and reinforcement, whereas carbon was diffused into the matrix.

• Analytical Science and Technology
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• v.21 no.3
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• pp.229-236
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• 2008

$C/TiO_2$ composites were prepared with surface modified MWCNT sequentially after HCl treatment and TNB as titanium source. There is a single crystal structure which is anatase in all of the samples from the data of XRD. The SEM microphotographs of $C/TiO_2$ composites show that the $TiO_2$ particles were well mixed with the CNT. There are C, O and Al with strong Ti peaks in all samples from EDX results, and it also shows that the sample CT has much more amount of C and Ti content than that of sample HCT. Finally, the photocatalytic activities for the $C/TiO_2$ composites have more effective than that of pristine $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.266-267
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• 2011

질화갈륨(GaN)은 높은 전자이동도 및 높은 항복전계를 가지며 낮은 온저항으로 인하여 에너지효율이 우수하기 때문에 고출력 전력소자 분야에서 많은 관심을 받고 있다. GaN을 이용한 고출력 전력소자의 경우 상용화 수준에 근접할 만한 기술적 진보가 있었으나, 페르미 레벨 고정(Fermi-level pinning) 현상, 소자의 누설전류 등 아직 해결되어야 할 문제를 갖고 있다. 본 연구에서는 실리콘 기판 위에 성장된 GaN 에피탁시를 활용한 고출력 전력소자의 누설전류를 억제시키기 위해 오믹 접합 중 Au의 상호확산을 억제하는 중간층 금속(Mo or Ni)을 변화시켰으며 오믹 열처리 온도에 따른 특성을 비교 연구하였다. $Cl_2$와 $BCl_3$를 이용하여 0.6 ${\mu}m$ 깊이의 메사 구조가 활성영역을 형성하였고, Si 도핑된 n-GaN 위에 Ti/Al/Mo/Au (20/100/25/200 nm) 와 Ti/Al/Ni/Au (20/100/25/200 nm) 오믹 접합을 각각 설계, 제작하였다. 오믹 열처리시의 GaN 표면오염을 방지하기 위해 $SiO_2$ 희생층을 증착하였다. 오믹 접합 형성을 위해 각 750$^{\circ}C$, 800$^{\circ}C$, 850$^{\circ}C$에서 30초간 열처리를 진행 하였으며, 이후 6 : 1 BOE 용액으로 $SiO_2$ 희생층을 제거하였다. 750, 800, 850$^{\circ}C$에서 Ti/Al/Mo/Au 구조의 오믹 접합 저항은 각 2.56, 2.34, 2.22 ${\Omega}$-mm 이었으며, Ti/Al/Ni/Au 구조의 오믹 접합 저항은 각 43.72, 2.64, 1.86 ${\Omega}$-mm이었다. Isolation 누설전류를 측정하기 위해서 두 개의 오믹 접합 사이에 메사 구조가 있는 테스트 구조를 제안하였다. Isolation 누설전류는 Ti/Al/Mo/Au 구조에서 두 오믹 접합 사이의 거리가 25 ${\mu}m$이고 100 V일 때 750, 800, 850 $^{\circ}C$의 열처리 온도에서 각 1.25 nA/${\mu}m$, 2.48 nA/${\mu}m$, 8.76 nA/${\mu}m$이었으며, Ti/Al/Ni/Au 구조에서는 각 1.58 nA/${\mu}m$, 2.13 nA/${\mu}m$, 96.36 nA/${\mu}m$이었다. 열처리 온도가 증가하며 오믹 접합 저항은 감소하였으나 isolation 누설전류는 증가하였다. 750$^{\circ}C$ 열처리에서 오믹 접합 저항은Ti/Al/Mo/Au 구조가 Ti/Al/Ni/Au 구조보다 약 17배 우수하였고, 850$^{\circ}C$ 고온의 열처리 경우 Ti/Al/Mo/Au 구조의 isolation 누설전류는 8.76 nA/${\mu}m$로 Ti/Al/Ni/Au의 누설전류 96.36 nA/${\mu}m$보다 약 11배 우수하였다. Ti/Al/Mo/Au가 Ti/Al/Ni/Au 보다 오믹 접합 저항과 isolation 누설전류 측면에서 전력용 GaN 소자에 적합함을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.171-177
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• 2001

The thermal and mechanical properties of amorphous Z $r_{62-x}$N $i_{10}$C $u_{20}$A $l_{8}$ $Ti_{x}$ (x=3, 6, 9at%) alloys were investigated. The crystallization process was confirmed as amorphous longrightarrow amorphous + Z $r_2$A $l_3$+ Zr + (Ni,Ti) longrightarrow Z $r_2$Cu + Al + (Ni,Ti) for 3at%Ti, amorphous longrightarrow amorphous + Al longrightarrow $Al_2$Ti + NiZr + CuTi for 6at%Ti and amorphous longrightarrow amorphous + Zr + Al longrightarrow Zr + $Al_2$Zr + Al $Ti_3$+ CuTi for 9at%Ti. lickers hardness ( $H_{v}$ ) increased with increasing volume fraction( $V_{f}$ ) of pricipitates for all concerned compositions. Tensile fracture strength ($\sigma_{f}$ ) showed a maximum value 1219MPa at $V_{f}$ = 38% for 3at%Ti, 1203MPa at $V_{f}$ = 2% for 6at%Ti and 1350MPa at $V_{f}$ = 5% for 9at%Ti. The $\sigma_{f}$ was rapidly decreased after showing the maximum value. The $V_{f}$ corresponding to rapidly decreased $\sigma_{f}$ coincided with the $V_{f}$ transited from ductile to brittle fracture surface.ace.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.121-127
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• 2011

The mechanical properties of the various heat treatment conditions on Ti-15Mo-3Nb-3Al-0.2Si alloy plates were examined. XRD patterns from the surface of Ti-15Mo-3Nb-3Al-0.2Si were analyzed as a solution-treated Ti alloy has the single-phase ${\beta}$ structure whereas the aged Ti alloys have the ${\beta}$ matrix embedded with ${\alpha}$ needles. High strength (~1500 MPa) with decent ductility (7%) was obtained by the Ti alloy double aged at $300^{\circ}C$ and $520^{\circ}C$ for 8 hours each. The double-aged alloy exhibits the finer structure than the single-aged alloy at $300^{\circ}C$ for 8 hours because of the higher nucleation rate of ${\alpha}$ needles at an initial low aging temperature ($320^{\circ}C$). TEM observation revealed that the fine nanostructure with ${\alpha}$ needles in the ${\beta}$ matrix ensured the excellent mechanical properties in the double aged Ti-15Mo-3Nb-3Al-0.2Si alloy. In the solution treated alloy, the yield drop, stress-serrations and the ductility minimum typically associated with dynamic strain aging can be attributed to the dynamic interaction between dislocations and oxygen atoms. The yield drop and the stress serration were not observed in aged samples because the geometrically introduced dislocations due to phase precipitates suppressed the dynamic strain aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.49 no.3
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• pp.321-324
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• 2005