• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.69-72
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• 2002

B $i_{3.3}$L $a_{0.7}$ $Ti_3$ $O_{12}$(BLT) 강유전체 박막을 $Al_2$ $O_3$/Si 기판위에 졸-겔(sol-gel)법으로 스핀 코팅하여 Metal-Ferroelectric-Insulator-Silicon (MFIS) 구조를 형성하였다. 박막의 결정화를 위해 as-coated 박막을 산소분위기에서 $650^{\circ}C$ 및 $700^{\circ}C$에서 30분 동안 후속열처리를 실시하였다. BLT 박막의 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 c축으로 우선 배향되는 경향을 보였으며, FWHM 값이 감소하여 결정성이 향상됨을 확인할 수 있었다. $700^{\circ}C$에서 열처리된 BLT 박막의 memory window는 약 2.5V (인가전압 5V)를 나타내었으며, 누설전류는 약 1.5x$10^{-7}$ A/$\textrm{cm}^2$를 나타내었다.다.다.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.198-205
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• 1991

Sintered thermistor body was fabricated by solid reaction method using $Fe_2O_3, \;Al_2O_3, \;TiO_2$ and Si powder. Surface matrix of sintered body was investigated by SEM and $\beta$-constant was obtained from measurement of resistance variation in liquid bath. The values of thermistor constant $\beta$ of samples in the temperature range $-50~+50^{\circ}C$ were distributed from 927 to 4005k. This thermistor body can be used as temperature sensor for radiosonde.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.80-80
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• 2006

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.317-323
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• 1999

Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1634-1636
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC-$TiB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_3$ and the annealing method. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_{5}Y_{3}O_{12}$). In pressureless annealing method, the relative density and the mechanical properties of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents because YAG of reaction between $Al_{2}O_3$ and $Y_{2}O_3$ was increased. But In pressured annealing method, reaction between $Al_{2}O_3$ and $Y_{2}O_3$ formed YAG but the relative density decreased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of 25$^{\circ}C$ to 700$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.535-542
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• 1993

It was investigated in this study that a preparation method, activation energy, surface area, pore volume, pore size distribution and DTA analysis of the dry gel in process of producing monolithic porous gel in Li2O-Al2O3-TiO2-SiO2 system by the sol-gel technique using metal alkoxides. Activation energy for gellation according to the variation of water concentration and the kind of catalysts ranged from 10 to 20kcal/mole. Monolithic dry gels were prepared after drying at 9$0^{\circ}C$ when the amount of water for gellation was 4~8 times more than the stoichiometric amount, that was necessary for the full hydrolysis of the mixed metal alkoxide. The specific surface area, the pore volume, the average pore radius of the dried gel at 18$0^{\circ}C$ according to the various kinds of catalyst were about 348~734$m^2$/g, 0.35~0.70ml/g and 10~35$\AA$, respectively. It showed that the dry gels were porous body. As a result ofthe analysis of DTA, it was confirmed that the exothermaic peaks at 715$^{\circ}C$ and 77$0^{\circ}C$ was clue to the crystallization of dried gel.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.510-515
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.669-680
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• 1994

Oxidation behaviour of TiAl intermetallic compounds with the addition of Cr, V, Si, Mo, or Nb was investigated at 900~$1100^{\circ}C$ under the atmospheric environment. The reaction products were examined by XRD, SEM equipped with WDX. The weight gain by continuous oxidation increased with the addition of Cr or V, but there was less weight gain when Mo, Si or Nb was added individually. he oxidation rate of Cr- or V-added TiAl was always larger than that of TiAI. However, oxidation rate of Si-, Mo- or Nb-added TiAl was almost same or smaller than that of TiAI. Thus, it is concluded that the addition of Cr or V did not improve the oxidation resistance, whereas the addition of Si, Mo or Nb improved the oxidation resistance. Oxides formed on TiAl with Mo, Si, and Nb were found to be more protective, resulting from the decrease in diffusion rate of the alloying elements and oxygen. Nb strengthened the tendency to form $AI_{2}O_{3}$ in the early stage of oxidation, due to the continuous $AI_{2}O_{3}$ layer formation and dense $Tio_{2}+AI_{2}O_{3}$ layer. According to the Pt-marker test of TiAI- 5wt%Nb, oxygen diffused mainly inward while oxides were formed on the substrate surface. Upon thermal cyclic oxidation at $900^{\circ}C$, it is shown that the addition of Cr or Nb improved the adherence of oxide scale to the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.72-75
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• 2000

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.