• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1501-1503
• /
• 1999

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiO_2/SiO_2/Si)$ using RF sputtering method. Ag, Cu, Al, Pt films for the formation of top eletrode were doposited on SCT thin films by thermal evaporator and sputtering. The effects of top electodes have be studied on SCT samples with a variety of top electrode materials.

• Journal of the Mineralogical Society of Korea
• /
• v.17 no.4
• /
• pp.309-325
• /
• 2004

The Cannington Ag-Pb-Zn deposit, northwest Queensland, Australia developed around the host rocks composing banded and migmatitic gneisses, sillimanite-garnet schist and amphibolite. Three crystal habits of sillimanite, gahnite (Zn-spinel) and garnet porphyroblasts occurred on the host rocks of the Cannington deposit could be used to delineate metamorphism that closely associated with Zn-mineralization in the deposit. Linkages the metamorphism to Zinc-mineralization is determined in four chemical systems, KFMASH (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$), KFMASHTO (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$-TiO$_2$-Fe$_2$O$_3$), NCKFMASH (Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$) and MnNCK-FMASH (MnO-Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$), using THERMOCALC program (version 3.1; Powell and Holland 1988). Partial melting in MnNCKFMASH and NCKFMASH systems occurs at lower temperature than in the KFMASH and KFMASHTO systems. The partial melting temperature decreases with increasing of Na/(Na+Ca+K) of the bulk rock compositions in the MnNCKFMASH system. The host rocks have melted ca 15 vol.% in the MnNCKFMASH system at peak metamorphic conditions (634$\pm$62$^{\circ}C$ and 4.8$\pm$1.3 kbar), but partial melting have not occurred in KFMASHTO system. Based on calculations of sillimanite isograd in different systems and sillimanite modal pro-portion, prismatic and rhombic sillimanite and gahnite porphyroblasts including prismatic sillimanite inclusion probably have resulted from pressure and temperature increasing through partial melting (from 550～$600^{\circ}C$, 2.0～3.0 kbar to 700～75$0^{\circ}C$, 5.0～7.0 kbar), furthermore have experienced N-S then W-E crustal shortening during D$_1$ and D$_2$ deformation. Consequently, Zinc mineralization related to gahnite growth occurred during D$_2$ and was redistributed and upgraded by partial melting and retrograde metamorphism into structural and rheological sites during shearing in D$_3$.

• Journal of the Korean Ceramic Society
• /
• v.41 no.6
• /
• pp.444-449
• /
• 2004

The microwave dielectric properties of low temperature sintered BaO-Nd$_2$O$_3$-TiO$_2$ (here after BNT) with a Pb-based glass-ceramics were studied in order to investigate their applicability to Low Temperature Co-fired Ceramics (LTCC) for fabrication of multilayered Radio Frequency (RF) passive components module. The BNT ceramics, with 5∼30 wt% of PbO-TiO$_2$-A1$_2$O$_3$-SiO$_2$ based glass-ceramics, were sintered at 105$0^{\circ}C$, which is lower than 130$0^{\circ}C$, sintering temperature of pure BNT ceramics. With increasing the amount of the glass-ceramics, sintering rate of the ceramics become activated due to the softening of glass, resulting in low-temperature densification. BaO-Nd$_2$O$_3$-TiO$_2$ microwave ceramics with 20 wt% glass-ceramics exhibit sintered relative densities over 95% and dielectric constant of 72, quality factor of 1500, and temperature coefficient of frequency of +22 ppm/$^{\circ}C$. This enhanced dielectric properties are attributed to mainly the presence of crystalline phases PbTiO$_3$ within the Pb-based glass.

• Journal of Welding and Joining
• /
• v.14 no.6
• /
• pp.93-100
• /
• 1996

Effect of a flux composition on weld metal toughness in submerged arc welding with 60kgf/$\textrm{mm}^2$ grade C-Mo type wires was investigated and interpreted in terms of weld metal microstructure and hardenability. Flux workability was also studied by characterizing a weld bead profile. Compared to other weld metals, .weld metal used alumina basic flux with nickel showed lowest oxygen content, highest hardenability and the most acicular ferrite. The highest impact toughness of that weld metal, however, was attributed to the tough matrix due to the nickel rather than to the larger amount of acicular ferrite. Manganese silicate flux had better workability than alumina basic flux, showing broader welding conditions resulting in a depth-to-width ratio of 0.5. The composition of oxides in the weld metal was dependent on the flux composition, showing MnO-SiO$_2$-TiO in manganese silicate flux and MnO-SiO$_2$-Al$_2$O$_3$-TiO in alumina basic flux. MnO-SiO$_2$composition in both oxides was similar to a tephroite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.865-868
• /
• 2002

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.05a
• /
• pp.14-14
• /
• 2003

Silicon carbide (SiC)는 높은 power 영역과 높은 온도영역에서도 작동 가능한 우수한 반도체 물질이다. 또한 우수한 열적 화학적, 안정성을 가지고 있어 가흑한 조건에서의 소자로써도 사용 가능하다. 현재 SiC 적용분야로는 우수한 전기적, 기계적 성질을 이용한 미세소자(MEMS)와 GaN 와 거의 유사한 격자상수를 가지는 것을 이용한 GaN epitaxial 성장의 기판으로도 사용되어진다. 그러나 SiC 는 기존의 습식식각 용매에 대해 화학적 안정성을 가지고 있기 때문에 전자소자의 제작에 있어서 플라즈마를 이용한 건식식각의 중요성이 대두되어지고 있다. 소자제작에 있어 이러한 건식식각시 식각 단면의 제어, 이온에 의한 낮은 손상 정도, 매끄러운 식각 표면, 그리고 고속의 식각 속도둥이 요구되어진다. 본 실험에서는 식각 속도의 증가와 수직한 식각 단면둥을 획득하기 위하여 SF6 플라즈마에서 Source power, dc bias voltage, 그리고 외부에서 인가되는 자속의 세기를 변화시쳐가며 식각 속도, 식각 마스크와의 식각 션택비, 식각 단면둥과 같은 SiC 의 식각 특성을 관찰하였다. 식각 후 식각 단면은 주사전자 현미경(SEM)을 통해 관찰하였다. 본 실험에서의 가장 높은 식각 속도는 분당 1850n 로써 이때의 공정조건은 1400W 의 inductive power, -600V 의 dc bias voltage, 20G 의 외부자속 세기이었다. 또한, 높은 inductive power 조건과 낮은 dc bias voltage 조건에서 Cu는 $SF_6$ 플라즈마 내에서 식각부산물의 증착으로 인해 SiC 와 무한대의 식각선택비를 보였다. 이러한 Cu 마스크를 사용한 SiC 의 식각에서는 식각 후 수직한 식각 단변을 관찰할 수 있었다. 것올 알 수 있다. 따라서, 기존의 pve 보다 세라믹 기판의 경우가 수분 흡수율이 높아 더 오랫동안 전류를 흐르게 하여 방식성이 개선된 것으로 판단된다.을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$의 범위를 벗어나지 않는다. 그렇기 때문에

• Korean Journal of Materials Research
• /
• v.10 no.8
• /
• pp.575-580
• /
• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.152-152
• /
• 2017

Titanium and its alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element,such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}$-stabilizer and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Therefore, in this study, Si and Mg coatings on the hydroxyapatite film formed Ti-29Nb-xHf alloys by plasma electrolyte oxidation has been investigated using several experimental techniques. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. The electrolyte was Si and Mg ions containing calcium acetate monohydrate + calcium glycerophosphate at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.624-631
• /
• 1993

The composites in the system aluminium titanate-mullite were synthesized by stepwise alkoxide hydrolysis of tetraethylorthosilicate, Si(OCLH5), and titaniumtetraethoxide, $Ti(OC_{2}H_{5})_4$ in $Al_{2}O_{3}$ ethanolic colloidal solution. All particles produced by sol-gel-process were amorphous, monodispesed and had a narrow particle size distribution. Sintered bodies at $1600 ^{\circ}C$ for 2h were subjected to prolonged durability tests-on the one hand annealing at the critical decomposition temperature of $1100 ^{\circ}C$ for lOOh and on the other cyclic thermal shock between 750 and $1400 ^{\circ}C$ for 100h. The best thermal durability was achieved by a composition containing 70 and 80 vol% aluminium titanate, which showed little change in microstructure and thermal expansion cycles during the tests. The microstructural degradation of samples studied using scanning electron microscopy, X-ray diffraction, and dilatometry, was presented here. The study was conducted in order to predict the service life of aluminium titanate-mullite ceramics formed by this processing route.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1148-1151
• /
• 2002

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.