• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.30-36
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• 2001

The crystal structures of fully dehydrated $Pd^{2+}$ - and $TI^{+}$ -exchanged zeolite X, $Pd_{18}TI_{56}Si_{100}Al_{92}O_{384}(Pd_{18}TI_{50-}X$, a = $24.935(4)\AA$ and $Pd_{21}TI_{50}Si_{100}Al_{92}O_{384}(Pd_{21}TI_{50-}X$ a = $24.914(4)\AA)$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at $21(1)^{\circ}C.$ The crystals were prepared using an exchange solution that had a $Pd(NH_3)_4Cl_2\;:TINO_3$ mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05M for 4 days. After dehydration at $360^{\circ}C$ and 2 ${\times}$$10^{-6}$ Torr in flowing oxygen for 2 days, the crystals were evacuated at $21(1)^{\circ}C$ for 2 hours. They were refined to the final error indices $R_1$ = 0.045 and $R_2$ = 0.038 with 344 reflections for $Pd_{18}Tl_{56-}X$, and $R_1$ = 0.043 and $R_2$ = 0.045 with 280 reflections for $Pd_{21}Tl_{50-}X$; I > $3\sigma(I).$ In the structure of dehydrated $Pd_{18}Tl_{56-}X$, eighteen $Pd^{2+}$ ions and fourteen $TI^{+}$ ions are located at site I'. About twenty-seven $TI^{+}$ ions occupy site II recessed $1.74\AA$ into a supercage from the plane of three oxygens. The remaining fifteen $TI^{+}$ ions are distributed over two non-equivalent III' sites, with occupancies of 11 and 4, respectively. In the structure of $Pd_{21}Tl_{50-}X$, twenty $Pd^{2+}$ and ten $TI^{+}$ ions occupy site I', and one $Pd^{2+}$ ion is at site I. About twenty-three $TI^{+}$ ions occupy site II, and the remaining seventeen $TI^{+}$ ions are distributed over two different III' sites. $Pd^{2+}$ ions show a limit of exchange (ca. 39% and 46%), though their concentration of exchange was much higher than that of $TI^{+}$ ions. $Pd^{2+}$ ions tend to occupy site I', where they fit the double six-ring plane as nearly ideal trigonal planar. $TI^{+}$ ions fill the remaining I' sites, then occupy site II and two different III' sites. The two crystal structures show that approximately two and one-half I' sites per sodalite cage may be occupied by $Pd^{2+}$ ions. The remaining I' sites are occupied by $TI^{+}$ ions with Tl-O bond distance that is shorter than the sum of their ionic radii. The electrostatic repulsion between two large $TI^{+}$ ions and between $TI^{+}$ and $Pd^{2+}$ ions in the same $\beta-cage$ pushes each other to the charged six-ring planes. It causes the Tl-O bond to have some covalent character. However, $TI^{+}$ ions at site II form ionic bonds with three oxygens because the super-cage has the available space to obtain the reliable ionic bonds.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.7
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• pp.1713-1721
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• 1994

Intermetallic-matrix composites(IMCs) have the potential of combing matrix properties of oxidation resistance and high temperature stability with reinforcement properties of high specific strength and modulus. One of the major limiting factors for successful applications of these composite at high temperatures is the formation of interfacial reactions between matrix and ceramic reinforcement during composite process and during service. The purpose of the present investigation is to develop a better understanding of the nature of creep fracture mechanisms in a $Ni_{3}Al$ composite reinforced with both $TiB_{2}$ and SiC particulates. Emphasis is placed in the roles of the products of the reactions in determining the creep lifetime of the composite. In the present study, creep rupture specimens were tested under constant ranging from 180 to 350 MPa in vacuum at $760^{\cric}C$. The experimental data reveal that the stress exponent for power law creep for the composite is 3.5, a value close to that for unreinforced $Ni_{3}Al$. The microstructural observations reveal that most of the cavities lie on the grain boundaries of the $Ni_{3}Al$ matrix as opposed to the large $TiB_{2}/Ni_{3}Al$ interfaces, suggesting that cavities nucleate at fine carbides that lie in the $Ni_{3}Al$ grain boundaries as a result of the decomposition of the $SiC_{p}$. This observation accounts for the longer rupture times for the monolicthic $Ni_{3}Al$ as compared to those for the $Ni_{3}Al/SiC_{p}/TiB_{2} IMC$. Finally, it is suggested that creep deformation in matrix appears to dominate the rupture process for monolithic $Ni_{3}Al$, whereas growth and coalescence of cavities appears to dominate the rupture process for the composite.

• Journal of the Korean Ceramic Society
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• v.13 no.1
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• pp.30-34
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• 1976

In general the chemical composition of glass ceramics in Li2O-Al2O3-SiO2 system is similar to the composition of $\beta$-spodumene (Li2O-Al2O3-4SiO2). With the object to manufacture the glass ceramics which can be produced in the domestic pot the composition of glass was so settled at 1.0 Li2O.0.9Al2O3.6.0SiO2 in order to reduce the contents of Li2O, to prevent the corrosion of the pot and to decrease the cost of raw materials. 0.2 mole and 0.1 mole of the mixture of TiO2 and ZrO2 as nucleants were added to the basic composition of 1.0 Li2O-0.9Al2O3-6.0SiO2. Each sample was divided into two kinds with a TiO2/ZrO2 ratio of 2 to 1 and the other with a TiO2/ZrO2 ratio fo 1 to 1. Thermal expansion coefficient, the most important property of glass ceramics, was tested. The softening point and the melting point of the samples were observed by the use of a heating microscope. The results obtained were as follows. The manufacturing of glass ceramics seems to be possible in the industrial plant using the domestic pot. 1) The composition of the glass which can be melted in the domestic pot process was near 1.0 Li2O.0.9Al2O3.6.0SiO2. 2) The temperature range of crystal creation and crystal growth was between 850-94$0^{\circ}C$, and 5 hours holding the samples at the temperature range was enough to crystallize them. The major crystal was $\beta$-spdumene and there existed petalite partialy. 3) The thermal expansion coefficient fo the crystallized glass was negative. 4) The deforming point of the crystallized glass was 1435$^{\circ}C$.

• Journal of Powder Materials
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• v.10 no.1
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• pp.15-20
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• 2003

Hybrid $A1_2O_3-TiC$ ceramic particle reinforced 6061 and 5083 Al composite powders were prepared by the combination of twin rolling and stone mill crushing process, followed by consolidating processes of cold compaction, degassing and hot extrusion. The composite bar consists of lamellar structure of ceramic particle rich area and matrix area, in which the hybrid was decomposed into each TiC of about $3-4\mutextrm{m}$ and $AI_2O_3$ particles of about $1-2\mutextrm{m}$ in diameter. It also found that fine $Mg_2Si$ precipitates of about 30 nm were embedded in the matrix, which have grains of about 3 $\mutextrm{m}$. Higher UTS was measured at the 5083 composite bar compared to the conventionally fabricated composite, due to again refinement effect by the rapid solidification. No particle was shown to form in the interface between the matrix and reinforcement, whereas carbon was diffused into the matrix.

• Journal of Welding and Joining
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• v.13 no.1
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• pp.103-114
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• 1995

Plasma Transferred arc(PTA) hard facing process has been developed to obtain an overlay weld metal having excellent wear resistance. The effect of Ti, TiSi$_{2}$ and TiC powders addition on the surface of Aluminum alloy 5083 has been investigated with PTA process. This paper describes the result of test the performance of the overlay weld metal. The result can be summarized as follows 1. Intermetallic compound is formed on surface of base metal in Ti or TiSi$_{2}$ powder but the reaction with surface of base metal is little seen in TiC powder. 2. In formation of composite layer on aluminum alloy surface by plasma transferred arc welding process, high melting ceramics like TiC powder is excellent. 3. The multipass welding process is available for formation of high density of powder. But the more number of pass, the less effect of powder, it is considered, and limits of number of pass. 4. By increasing area fraction of TiC powder on Al alloy surface, in especially TiC powder the hardness increase more than 40% area fraction and 88% shows about Hv 700.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.68-68
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• 2000

펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

• Nuclear Engineering and Technology
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• v.52 no.1
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• pp.1-13
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• 2020

At present, the Department of Energy (DOE) in Unite State are directing the efforts of developing accident tolerant fuel (ATF) technology. As the first barrier of nuclear fuel system, the material selection of fuel rod cladding for ATFs is a basic but very significant issue for the development of this concept. The advanced cladding is attractive for providing much stronger oxidation resistance and better in-pile behavior under sever accident conditions (such as SBO, LOCA) for giving more coping time and, of course, at least an equivalent performance under normal condition. In recent years, many researches on in-plie or out-pile physical properties of some suggested cladding materials have been conducted to solve this material selection problem. Base on published literatures, this paper introduced relevant research backgrounds, objectives, research institutions and their progresses on several main potential claddings include triplex SiC, FeCrAl and MAX phase material Ti3SiC2. The physical properties of these claddings for their application in ATF area are also reviewed in thermohydraulic and mechanical view for better understanding and simulating the behaviors of these new claddings. While most of important data are available from publications, there are still many relevant properties are lacking for the evaluations.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1061-1069
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• 1998

The thermal instability of Al2TiO5 Ceramics was contrlled by solid solution with MgO SiO2 and ZrO2 through electrofusion in an arc furnace. The thermal expansion properties of Al2TiO5 composites show the hysteresis due to the strong anisotropy of The crystal axes of these material. These phenomena are ex-plained by the opening and closing of microcracks. The difference in microcracking temperatures e.g 587.6(ATG2), 405.9(ATG3) and 519.7$^{\circ}C$(ATG4) is caused by the difference in grain size and stabilizer type. The thermal shock behaviour under cyclic conditions between 750-1400-75$0^{\circ}C$ show no change in mi-crostructure and phase assemblage for all three stabilized specimens. After the thermal loading test at 110$0^{\circ}C$ for 100hrs. ATG1 and ATG2 materials decomposes completely to its components corundum and ru-tile in both cases. However with approximatelly 20% retention of the Al2TiO5 Thus in order to prevent decomposition of the stabilized material in the critical temperature range 800-130$0^{\circ}C$ it must be traversed within a short period of time.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.11
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.359-364
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• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.