• 한국세라믹학회지
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• 제28권5호
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• pp.359-364
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• 1991

The effects of Pb5Ge3O11 on the sinterbility and lattice variation of the semiconducting 0.15 mol% Y2O3 doped BaTiO3 have been investigated as functions of additive contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 110$0^{\circ}C$ to 130$0^{\circ}C$). As the amount of Pb5Ge3O11 increases, the sinterbility of BaTiO3 increases abruptly at around 115$0^{\circ}C$. During the sintering, the most of Pb+2 ions in additives penetrate into BaTiO3 lattices and Ge+4 ions present at grain boundaries. Therefore the c lattice of the BaTiO3 increases largely and then the tetragonality increases due to the diffusion of the Pb+2 ions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• 전기화학회지
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• 제18권1호
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• pp.17-23
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• 2015

$Li_4Ti_5O_{12}$는 우수한 안정성으로 자동차용 리튬 이온 이차전지의 음극 활물질로서 각광 받고 있다. 그러나 넓은 밴드갭에 기인한 절연체 특성으로 고율 충/방전을 가능하게 하기 위해서는 전자 전도도의 개선이 필수적이다. 본 연구에서는 Cr 도핑을 통해 $Li_4Ti_5O_{12}$의 전자 전도도 개선을 목표로 하였으며, wet-mixing법을 통한 물질 합성시 도판트인 Cr 프리커서의 용해도 차이에 의한 Cr-doped $Li_4Ti_5O_{12}$의 전기화학적 특성 변화를 고찰하고자 하였다. 시료의 물리적 특성은 ICP, XRD, SEM, EXAFS을 통하여 확인하였고 1.0V~3.0V (vs. $Li/Li^+$) 하에서 충/방전 특성을 조사하였다. 프리커서의 용해도는 합성된 물질의 상(phase) 및 모폴로지에 큰 영향을 미쳤으며, 가장 용해도가 높은 $Cr(NO_3)_2$ 프리커서로부터 합성된 경우 Bare $Li_4Ti_5O_{12}$와 비교하여 약 2배 개선된 고율 충/방전 특성(130 mAh/g @ 10 C)을 확인하였다.

• 한국결정성장학회지
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• 제5권3호
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• pp.209-214
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• 1995

99.9%의 $Fe_2O_3$ 를 0.2 wt% 첨가한 $SrTiO_3$ 단결정을 air 분위기와 질소분위기하에서 floating zone 법으로 성장시켰다. 성장속도는 5mm/hr 였으며 회전속도는 30rpm이었다. 육성한 결정을 성장방향에 수직하게 절단하여 준비한 시편을 질소분위기하에서 900, 1000, $1100^{\circ}C$에서 2시간동안 annealing한 후 비저항을 측정하였다. 측정한 비저항치를 전기전도도로 전환하고 이를 이용해 계산한 activation energy로서 전기전도도 향상기구를 설명하고자 하였다.

• 한국재료학회지
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• 제18권9호
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• 한국결정성장학회지
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• 제9권5호
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• pp.498-503
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• 1999

La가 혼입된 $BaTiO_3$를 균일침전법으로 제조하여 La의 혼입량 및 입자의 크기 변화에 따른 전기적 특성을 관찰하였다. 온도변화에 따른 저항을 측정한 결과 란탄의 농도가 0.6 mol%일 때 그리고 입자의 크기가 1.0 $\mu\textrm{m}$으로 작을 때 가장 큰 PTCR 효과를 나타내었다. 상전이온도($(T_c)$) 이상에서 온도와 1/$\varepsilon_m$(T)의 관계를 나타낸 도시에 의하면 유전상수의 변화가 Curie-weiss 법칙에 잘 다름을 알 수 있었다. 측정한 비저항과 유전상수로부터 계산한 전위장벽의 높이도 란탄의 농도가 0.6 mol%일 때 입자의 크기가 1.0$\mu\textrm{m}$으로 작을 때 가장 큰 전위장벽을 나타내었다.

• 한국세라믹학회지
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• 제32권9호
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• pp.967-976
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• 1995

The possiblity of the existence of a spontaneous relaxor-normal ferroelectric transition was proposed and examined using 1~5 mol% PbZrO3-doped Pb(Ni1/3Nb2/3)O3-PbTiO3 (PNN-PT) systems having tetragonal symmetry at rom temperature. On cooling, the system with 60mol% Pb(Ni1/3Nb2/3)O3 underwent a spontaneous transition from a relaxor to a normal ferroelectric state. A microscopic examination demonstrates that the relaxornormal ferroelectric transition corresponds to a micro-macro domain switching accompanied with thermoelastic martensitic transformation. The long-range macrodomains below the transition temperature were characterized by twinlike 90$^{\circ}$macrodomains with tetragonal symmetry. The relaxor-normal ferroelectric transition was further correlated with the rhombohedral-tetragonal first-order structural transition.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.555-559
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• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

• 한국세라믹학회지
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• 제44권8호
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.427-429
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• 1995

In this paper, the effect of alkaline oxides on the humidity sensitivity of $V_2O_5$(2mol%)-doped $TiO_2$(98mol%) was investigated as functions of $Li_2CO_3$, $K_2CO_3$, additives (x= 0.0 mol%, 1mol%, 2mol%, 5mol%, 10mol%). 1. The porosity and total intrusion volume of sample containing 1, 2, 5mol% $K_2O$ was increased, and then those of 10mol% $K_2O$ was reduced again. 2. The humidity sensitivity of samples containing 1, 2, 5, 10mol% $K_2O$ were good generally. Especially the sample containing 5mol% $K_2O$ were the better. 3. the stability of the humidity sensitivity of samples containing $K_2O$ at low and high temperatures is very good.