• 열처리공학회지
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• 제2권4호
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• pp.1-10
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• 1989

To investigate the influence of temperature on the TiN film, it was deposited on the STC-3 steel and Si-wafer from $TiCl_4/N_2/H_2$ gas mixture by using the radio frequency plasma assisted chemical vapor deposition. The deposition was performed at temperature of $400^{\circ}C-500^{\circ}C$. The results showed that crystalline TiN film was deposited over $480^{\circ}C$, and all specimens showed the crystalline TiN X-ray diffraction peaks after vacuum heat treatment for 3 hrs, at $1000^{\circ}C$, $10^{-5}torr$. While the film thickness was increased above $480^{\circ}C$, it was decreased under $480^{\circ}C$ as temperature increased. And the contents of titanium were increased and it of chlorine were decreased as temperature increased. Because temperature increase was attributed to the increase in the density of TiN film, surface hardness of TiN film was increased with temperature.

• 대한금속재료학회지
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• 제48권8호
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• pp.780-789
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• 2010

The aim of this study is to evaluate the microstructure and tensile property of in-situ (TiB+TiC) particulate reinforced titanium matrix composites (TMCs) synthesized by the investment casting process. Boron carbide ($1,500{\mu}m$ and $150{\mu}m$) was added to the titanium matrix during vacuum induction melting, which can provide the in-situ reaction of $5Ti+B_4C{\rightarrow}4TiB+TiC$. 0.94, 1.88 and 3.76 wt% of $B_4C$ were added to the melt. The phases identification of the in-situ synthesized TMCs was examined using scanning electron microscopy, an X-ray diffractometer, an electron probe micro-analyzer and transmission electron microscopy. Tensile properties of TMCs were investigated in accordance with the reinforcement size and volume fraction. The improvement of tensile property of titanium matrix composites was caused by load transfer from the titanium matrix to the reinforcement and by grain refinement of titanium matrix and reinforcements.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.112.2-112.2
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• 2007

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 춘계학술강연 및 발표대회
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• pp.65-66
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• 2002

• 한국결정성장학회지
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• 제24권5호
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• pp.213-218
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• 2014

Anatase $TiO_2$에 각기 다른 텅스텐(W) 함유원료와 제조방법을 적용하여 $WO_3$ 촉매가 첨가된 SCR(selective catalytic reduction)용 분말을 합성하였으며, W 촉매 첨가가 합성분말의 상합성 및 SCR 촉매능에 미치는 영향에 대해 연구하였다. 촉매의 지지체인 $TiO_2$는 침전법으로 anatase 상으로 합성되었으며, anatase에서 고온상인 rutile로의 상전이 온도는 $1200^{\circ}C$였으나, $WO_3$를 10 wt% 첨가할 경우 이 상전이 온도는 $900^{\circ}C$로 낮아졌다. 건식으로 $WO_3$ 분말을 직접 첨가하여 $WO_3(10wt%)/TiO_2$를 제조한 경우 $350^{\circ}C$에서 $NO_X$ 제거 촉매능이 최고점에 이르나 온도증가에 따라 그 효율이 상당히 감소하였다. 암모늄-메타-텅스테이트를 습식으로 첨가하여 제조한 경우, 보다 고온인 $450^{\circ}C$에서 촉매능이 최고점에 이르렀으며 온도에 따른 효율감소 폭도 적었다. 이와 같은 경향은 $WO_3$와 $V_2O_5$를 동시 첨가하여 제조한 $V_2O_5(5wt%)-WO_3(10wt%)/TiO_2$ 촉매에서도 나타났다. 즉, 암모늄-메타-텅스테이트를 습식으로 첨가한 경우, $WO_3$를 직접 첨가한 경우에 비해 넓은 온도범위($300^{\circ}C{\sim}500^{\circ}C$)에 걸쳐 90 %에 이상의 우수한 $NO_X$ 변환효율을 보였다.

• Journal of Welding and Joining
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• 제15권6호
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• pp.96-104
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• 1997

The present study was aimed to correlate the microstructure and the hardness as well as the wear resistance of the metal-ceramic particulated composite layer on the pure Al plate. The composite layers were constructed by the addition of TiC particles on the surface of Al-Cu alloyed layers by PTA overlaying process. Initially, the Al-Cu alloyed layers were achieved by the deposition of Al-(25 ~ 48%) Cu alloys on the pure Al plate by TIG process. It was revealed that TiC particles were uniformly dispersed without any reaction with matrix in the composite layer. The volume fraction of TiC particles (TiC V F) increased from 12% to 55% with increasing the number of pass of composite layer. Hardnesses of (Al-48%Cu + TiC (3&4layers)) composite layer were Hv450 and Hv560, respectively, due to the increase of TiC V/F. Hardnesses of (Al-Cu + TiC) composite layers decreased gradually with insreasing temperature from 100$^{\circ}$C to 400$^{\circ}$C, and hardnesses at 400$^{\circ}$C were then reached to 1/5 - 1/10 of room temperature hardness depending on the construction of composite layers. The Specific wear of (Al + Tic) layer and Al-48%Cu alloyed layer decreased to 1/10 of the of pure Al, while the specific wear of (Al-48%Cu + TiC (4 layers)) composite layer exhibited 1/15 of that of steel such as SS400 and STS304.

• 한국세라믹학회지
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• 제35권10호
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• pp.1020-1029
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• 1998

The reaction-bonded TiC-Ni/Si/Co composites were prepared by the melt infiltration of Co, Si, and Ni me-tal into the TiC preforms. The miocrostructure reaction composition and mechanical properties were in-vestigated. In the case of the melt infiltrated with Co and Ni TiC grain shape was changed from angular to spherical shape with the average grain size of ∼5$\mu\textrm{m}$. In the case of the melt infiltrated with Co/Si or Ni/Si, Si was reacted with TiC particles and formed SiC particles. The bending strength of both specimens which have atomic ratio of 3 were 710 MPa and 515 MPa respectively. In the case of the melt infiltrated with Ni/Si/Co,. nonstoichiometric TiC was formed and its bending strength decreased to 420 MPa.

• 한국진공학회지
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• 제7권3호
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• pp.208-213
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• 1998

최근 셀리사이드(salicide) 제조시 $COSiO_2$의 에피텍셜 성장을 돕기 위하여 Ti층을 삽 입한 Co/Ti/Si 이중층 구조의 실리사이드화가 관심을 끌고 있다. Co/Ti 이중층을 이용한 salicide 트랜지스터가 성공적으로 만들어지기 위해서는 gate 주위의 spacer oxide위에 증착 된 Co/Ti 이중층을 급속열처리할 때 Co/Ti와 $SiO_2$간의 계면에서의 상호반응에 대하여 조사 하였다. Co/Ti 이중층은 $600^{\circ}C$에서 열처리한 후 면저항이 급격하게 증가하기 시작하였는데, 이것은 Co층이 $SiO_2$와의 계면에너지를 줄이기 위하여 응집되기 때문이다. 이때 Co/Ti의 열 처리후 Ti에 의하여 $SiO_2$기판의 일부가 분해됨으로써 절연체의 Ti산화물이 형성되었으나, 이외의 도전성 반응부산물은 발견되지 않았다.

• 센서학회지
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• 제14권2호
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• 한국재료학회지
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• 제9권6호
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• pp.577-582
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• 1999

전도성 $Si_3N_4$-TiN 세라믹 복합재료를 제조하기 위해 성형체를 $1450^{\circ}C$에서 20시간 질화처리한 후 $1950^{\circ}C$에서 3.5시간 가스압소결 기술에 의해 후소결하였다. 초기 분말로 약 $10\mu\textrm{m}$로 된 상용 Si분말, 100mesh와 325mesh로된 Ti분말, 그리고 미세한 $\2.5mu\textrm{m}$ TiN분말을 사용하였다. Ti분말울 사용한 $Si_3N_4$-TiN 소결체에서 상대밀도 및 파괴인성값은 다량의 조대한 기공의 존재로 인하여 낮은 값을 보였다. 그러나 TiN분말을 사용한 $Si_3N_4$-TiN 복합체에서 파괴인성, 파괴강도 및 전기저항은 각각 $5.0MPa{\cdot}m^{1/2}$, 624MPa 그리고 $1400{\omega}cm$였다. 복합체에서 TiN 업자의 분산은 $Si_3N_4$ 업자의 조대한 봉상형태로의 성장올 방해하며 $Si_3N_4$/TiN 계면에 강한 변형장울 만든다. $Si_3N_4$-TiN 복합체의 전기전도도 및 기계적 특성을 향상시키기 위해 TiN 업자가 균일하게 분산 된 미세조직 제어가 요망된다.