• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1327-1334
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• 1999

Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.455-459
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• 2007

Plasma catalytic methane conversion was carried out in the presence of sol-gel derived $Pt/TiO_2$ catalysts within a dielectric-barrier discharge (DBD) reactor. Plasma-assisted reduction (PAR) was applied to reduce the prepared $Pt/TiO_2$ catalysts in DBD reactor, and prepared catalysts were successively reduced by PAR within 20 min irrespective of the Pt loading and the calcination temperature. The highest methane conversion was 40% when 3 wt% $Pt/TiO_2$ and 5 wt% $Pt/TiO_2$ catalysts were used after calcination at $600^{\circ}C$. The selectivities of light alkanes ($C_2H_6$, $C_3H_8$, $C_4H_{10}$) were highly increased when $Pt/TiO_2$ catalysts were used in DBD reactor.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.150-155
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• 2004

This study attempts to form a TiN barrier layer against Cu diffusion by the easier and more convenient method. In this new approach, Ti was sputter-deposited, and nitrided by heat-treating in the NH$_3$ambient. Sheet resistance of as-deposited Ti was 20 Ω/$\square$, but increased to 195 Ω/$\square$ after the heat-treatment at 30$0^{\circ}C$, and lowered to 120 Ω/$\square$ after the heat-treatment at 50$0^{\circ}C$, and $600^{\circ}C$. AES results for these thin films confirmed that the atomic ratio of Ti and N was close to 1:1 at or above 40$0^{\circ}C$ heat-treatment. However, it was also found that excessive oxygen was contained in the TiN layer. To examine the barrier property against Cu diffusion, 100nm Cu was deposited on the TiN layer and then annealed at 40$0^{\circ}C$ for 40 min.. Cu remained at the surface without diffusing into the Si layer.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.325-332
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• 1998

Crystalline TiO2 ultrafine powders were prepared simply by heating and stirring aqueous TiOCl2 solution with {{{{ {Ti }^{4+ } }} concentration of 0.5 M from room temperature to 10$0^{\circ}C$ under 1 atmoshpere. The crystallinity and the particle shape of TiO2 ultrafine powders obtained by simple precipitation method were analyzed us-ing XRD(X-ray diffractometer). SEM(scanning electron microscopy) and TEM(transmission electron mi-croscopy) TiO2 crystalline precipitate with rutile phases is fully formed at the temperatures of up to $65^{\circ}C$ and then TiO2 crystalline precipitate with anatase phase starts to be formed above temperatures $65^{\circ}C$ showing its full formation at 10$0^{\circ}C$ These behaviors of TiO2 crystalline precipitate directly from an aqueous TiOCl2 solution would be caused due to the existence of {{{{ OMICRON ^2+ }} ions from distilled water which oxydize TiOCl2 to TiO2 not hydrolyzing it to Ti(OH)4 Here thermodynamically stable TiO2 rutile phase generally formed at higher temperature is practically precipitated at lower temperatures in this study This may be due to the precipitation by very slow reaction enough to make TiO2 particles allocated into stable rutile structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.269-273
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• 2001

The effect of $TiO_2$addition on the hydration reaction of MgO ceramics were studied after being heated at $1450^{\circ}C$. The pure MgO ceramics showed significant weight change after exposure to water due to the hydration reaction through the formation of $Mg(OH)_2$while $TiO_2$-added MgO ceramics did not. The $Mg_2TiO_4$phase were observed in the $TiO_2$-added MgO ceramics sintered at 145$0^{\circ}C$. Bulk density increased as the amount of $TiO_2$increased and the apparent porosity and water absorption decreased by $TiO_2$addition. The hydration resistance of MgO ceramics was found to be improved by $TiO_2$addition.

• Journal of the Korean Magnetics Society
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• v.1 no.1
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• pp.25-29
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• 1991

It has been found that the as-quenched ribbons of $Sm_{x}Fe_{100-x-y}Ti_{y}(3.8{\leq}x{\leq}11.5,\;3.8{\leq}y{\leq}19.2)$ are composed of metastable $TbCu_{7}-type$ structure, ${\alpha}-(Fe,\;Ti),\;Fe_{2}Ti$ and an unknown phase accompanying strong diffraction line at $d=2.14{\AA}$. The metastable $TbCu_{7}-type$ phase, which was formed by rapid quenching, did not transform fully to the stable phases after annealing at $850^{\circ}C$ for 45 minutes except the one existed in $SmFe_{11}Ti$ melt-spun ribbon. The $SmFe_{11}Ti$ melt-spun ribbon, annealed at $850^{\circ}C$ for 45 minutes in vacuum, was found to be composed of $ThMn_{12}$. $\alpha$-(Fe, Ti) and $Fe_{2}Ti$ phases. The formation of $\alpha$-(Fe, Ti) and $Fe_{2}Ti$ phases in this melt-spun ribbon was due to the evaporation of Sm atoms during the high temperature annealing. The atomic ratios for the surface and the inside of $SmFe_{11}Ti$ melt-spun ribbon annealed in vacuum were $SmFe_{25.8}Ti_{2.6}$ and $SmFe_{11.7}Ti_{1.0}$ respectively. It is thought to be that much of $\alpha$-(Fe, Ti) and $Fe_{2}Ti$ phases exist on the surface of ribbon.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.255-262
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• 1997

Titanium nitride (TiN) films were prepared by reactive sputter deposition in mixed gas of Ar+$N_2$. The volume percentage of $N_2$ in the working gas was chosen so as to grow stoichiometric TiN films and the substrate temperature during film growth was set from room temperature to $700^{\circ}C$. Stoichiometric $Ti_{0.5}N){0.5}$ films with (111) texture were grown at temperatures over $600^{\circ}C$, while films prepared at temperatures below $600^{\circ}C$ showed N-rich TiN. The composition X and y in the $Ti_xN_y$ films determined by XPS and RBS varied within 5% with the substrate temperature. The sheet resistance of the TiN films decreases as the substrate temperature increased. TiN film prepared at $600^{\circ}C$ showed 14.5$\Omega\Box$, and it decreased to 8.9$\Omega\Box$ after the sample was annealed at $700^{\circ}C$, 30 sec in Ar-gas ambient by RTA. By far, high quality stoichiometric TiN films by reactive sputtering in the mixed gas ambient could be prepared at substrate temperature over $600^{\circ}C$.

• Tribology and Lubricants
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• v.38 no.6
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• pp.274-280
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• 2022

There is a problem that semiconductor probe pin has a short lifespan. In order to solve this problem, Ti having excellent conductivity was doped to tetrahedral amorphous carbon (ta-C) having excellent hardness and abrasion resistance. This experiment was planned through the Taguchi robust design to determine the effect of the control factor of the ta-C:Ti coating film. The effect and contribution of control factors such as Unbalanced Magnetron Sputter(UBM) discharge current, arc discharge current, temperature, and bias voltage on ta-C:Ti characteristics were analyzed from the perspective of electrical and mechanical characteristics. The UBM discharge current was set to 4, 6, and 8 A. The main control factor of thickness and resistance is the UBM discharge current, and the thickness increased and the resistance decreased as the current increased. The decrease in resistance is due to the increase in the Ti content of the ta-C:Ti coating film. The arc discharge current was set to 60, 80, and 100 A. The main control factor of hardness and wear is the arc discharge current, and as the current rises, the hardness increases and the wear area decreases. This is due to the increased ta-C content of the ta-C:Ti coating film. Since resistance and wear are important for Probe Pin, the optimal level is set from the perspective of resistance and wear and a confirmation experiment is conducted.