• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 한국자기학회지
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• 제18권2호
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• pp.75-78
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• 2008

$AB_2X_4$((A, B)=Transition Metal, X=O, S, Se) 물질에서의 8면체 자리의 이온 거동과 4면체 자리 이온과의 상호작용에 대하여 많은 연구가 이루어지고 있다. 본 연구에서는 4면체 자리에 비자성 이온인 Zn 이온을 치환함에 따른 자기구조의 변화를 관측하여 8면체 자리의 자기구조를 분석하고자 하였다. Cr이온의 일부를 Fe로 치환한 $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$의 닐온도($T_N$는 90K로 $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ 비하여 감소하였다. 4.2 K에서의 초미세자기장값의 분석결과, 초미세자기장값의 작은 차이를 보이는 잘 분리된 2-set 형태로 나타났으며, $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 488, 478 kOe 인데 반하여, $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$의 초미세자기장값은 $B_1=486$, $B_2=468$ kOe으로 나타났다. Zn 이온의 치환에 따라서 초미세자기장값의 변화를 알 수 있었다. 이러한 결과로 인하여, Zn 이온이 x=0.1 치환된 물질의 경우, 스핀재정렬온도($T_S$)가 18K으로 감소함을 알 수 있다.

• Nuclear Engineering and Technology
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• 제55권3호
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• pp.1061-1070
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• 2023

Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs₂TiI₆ and Ba₂AgIO₆ displayed superior photon attenuation properties. A 3.5 cm thick Ba₂AgIO₆-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr₃ and La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba₂AgIO₆ showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.

• Restorative Dentistry and Endodontics
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• 제34권6호
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• pp.484-490
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• 2009

본 연구의 목적은 glucose leakage test를 이용하여 soft chelating irrigation이 근관 충전의 sealing ability에 미치는 영향을 평가하는 것이다. 발치된 45개의 단근치를 수집하여 치관부를 잘라내 치근이 총 13mm가 되게 하였다. 근관은 K3 NiTi 구동 기구를 사용하여 성형하고 #45/.06 taper까지 확대하였다. 3개의 실험군(n=13)과 2개의 대조군(n=3)으로 나누었다. 실험군은 다음의 세척 방법으로 처리하였다. 1군, 2.5% NaOCl로 세척; 2군, 2.5% NaOCl로 세척 후 17% EDTA로 최종 세척; 3군, 2.5% NaOCl과 15% HEBP 혼합 용액으로 세척, 근관은 gutta-percha와 AH Plus를 사용하여 측방가압으로 충전하였다. $37^{\circ}C$, 습도 100%에서 7일 동안 보관하고 glucose leakage model을 이용하여 치관부로부터 치근부 방향의 미세누출을 정량화하였다. 1, 4, 7, 14, 21, 28일 째 누출된 glucose의 농도를 spectrophotometry로 측정하였다. 분석 결과 모든 실험군에서 실험 기간 동안 누출이 증가하는 경향이 있었다. HEBP처리군은 실험 기간 동안 EDTA처리군과 유의한 차이를 보이지 않았다. HEBP처리군은 21일 이후부터 도말층으로 덮인 NaOCl처리군에 비해 유의하게 낮은 누출을 보였다. HEBP로 처리된 상아질은 EDTA로 처리된 상아질과 비슷한 양상의 폐쇄를 보였으나 도말층이 남아있는 상아질보다는 우수한 sealing ability를 나타냈다. 그러므로 약한 킬레이트제인 HEBP는 EDTA의 대안이 될 수 있을 것이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1290-1292
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• 1995

A cylindrical-post magnetron sputtering system was designed for pipe inner coating. The discharge condition was depended on the gas pressure, magnetic field and pipe diameter. At given discharge current, discharge voltage increased a little with pipe diameter. The electron temperature and floating potential increased with magnetic field. The impact ion energy on the pipe increased with bias voltage. The TiN thin-film of $2{\mu}m$ thickness was formed by cylindrical-post magnetron sputtering system under the conditions of the pressure of 5mTorr, the applied voltage of 700V, the discharge current of 500mA, the magnetic field of 300G, and the bias voltage of -100V.

• 한국도서관정보학회지
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• 제3권
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• pp.1-31
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• 1976

If Y'ational developments are depend on the dex-elopment of regional >ociety and de~.elopment of regional society are rely on intellcctual delrelopment of members of regional society, going abreas! oi economic capacity. Estnhlis!l:r,ent of libraries as a treasure-house of mental resources and its Jet-elopment are inevit-able and important. But in every respect :f modern libraries are not equipped with contemporary devclij;!~i:c:\ulcornert of society. One c~i the resolving problems, like this, opening the door of the liI~-,\ulcornerr:~fa-c ilities, as one object, which located in every regional areas, u.9ng the existing facilities, the width of the library services mus: I)c opened. I-' ;- I n,> study is aimed at like the following: 1. is analysizing the situation ~vhich the library facilities of one ti:u~:sa!~d five hundred and fifty nine located here and there ir, Ii.;~-ui:gij~opkr ovince in Korea and s i s t ~t.l lousand seven hundred aid tliirl:~ six village libraries, for connecting as a library networks. 2. Tl\ulcornerc ivhole libraries in Kyungbook province and dividing into four ::arts as a Daegu, Phohang, Ahndong and Kimchun area as a transportation area, school area and resources area which exhibiting the view-point of helping-net~vorksl ike the following,

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.5-8
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.229-234
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• 2002

The variation of HAZ toughness with nitrogen content and weld cooling rate was investigated and interpreted in terms of both microstructure and the amount of free nitrogen. The presence of free nitrogen in HAZ was investigated by internal friction measurement and its amount was measured by hydrogen hot extraction analysis. Both nitrogen content and weld cooling rate influenced HAZ microstructure and high toughness was obtained at a mixed microstructure of acicular ferrite, feffite sideplate and polygonal ferrite. If nitrogen content is too low or cooling rate is too fast, bainitic microstructure is obtained and toughness is low. On the other hand, if nitrogen content is too high or cooling rate is too slow, coarse polygonal ferritic microstructure is obtained and toughness is deteriorated again. ill addition to the microstructural change, high nitrogen content also resulted in a large amount of free nitrogen. Therefore, nitrogen content should be kept as low as possible even if the mixed micostructure is obtained. In this experimental condition, the maximum toughness was obtained at 0.006% nitrogen content when weld cooling time ($\Delta$t$_{8}$5/)) is 60s.TEX>5/)) is 60s.