• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.329-334
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• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국표면공학회지
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• 제53권6호
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• pp.271-279
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• 2020

Non-ferrous metals, widely used in the mechanical industry, are difficult to machine, particularly by drilling and tapping. Since non-ferrous metals have a strong tendency to adhere to the cutting tool, the tool life is greatly deteriorated. Diamond-like carbon (DLC) is one of the promising candidates to improve the performance and life of cutting tool due to their low frictional property. In this study, a sacrificial DLC layer is applied on the hard nitride coated drill tool to improve the durability. The DLC coatings are fabricated by controlling the acceleration voltage of the linear ion source in the range of 0.6~1.8 kV. As a result, the optimized hardness(20 GPa) and wear resistance(1.4 x 10-8 ㎣/N·m) were obtained at the 1.4 kV. Then, the optimized DLC coating is applied as an sacrificial layer on the hard nitride coating to evaluate the performance and life of cutting tool. The Vickers hardness of the composite coatings were similar to those of the nitride coatings (AlCrN, AlTiSiN), but the friction coefficients were significantly reduced to 0.13 compared to 0.63 of nitride coatings. The drilling test were performed on S55C plate using a drilling machine at rotation speed of 2,500 rpm and penetration rate of 0.25 m/rev. The result showed that the wear width of the composite coated drills were 200 % lower than those of the AlCrN, AlTiSiN coated drills. In addition, the cutting forces of the composite coated drills were 13 and 15 % lower than that of AlCrN, AlTiSiN coated drills, respectively, as it reduced the aluminum clogging. Finally, the application of the DLC sacrificial layer prevents initial chipping through its low friction property and improves drilling quality with efficient chip removal.

• 한국정밀공학회지
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• 제31권6호
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• pp.513-519
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• 2014

For depth machining in die and mold, Electrical Discharge Machining (EDM) is used generally. To make deep hole and deep shape efficiently, cemented carbide endmill for depth machining is necessary. For this purpose, cemented carbide endmill was designed using design of experiment (DOE). To improve cutting performance, endmill was coated with multilayer surface treatment, TiAlCrSiN and TiAlCrN, for higher wear resistance. In order to evaluate the endmill, Transverse Rupture Strength (TRS) test was tried for investigating the relationship between surface treatment and strength in endmill body. Scratch test was also used for measuring adhesion force of each surface treatment. To evaluate hardness of surface treatment, Atomic Force Microscope (AFM) analysis was carried out. Wear test was executed for characteristics of each surface treatment in high temperature. Consequently, TiAlCrSiN was superior to the TiAlCrN coating in case of high temperature environment such as cutting.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.252-255
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• 2004

Various Semiconductor/Metal structured nanowires were synthesized from the simple thermal annealing of ball-milled compound powders and the thermal evaporation of metals. Their structural properties were investigated by Scanning Electron Microscopy(SEM) and Transmission Electron Microscopy(TEM), Energy Dispersive X-ray spectroscopy(EDX). Depending on the type of metals and the material of nanowires, uniform somiconductor/metal nanowires(GaN/Al, GaN/Ag) or isolated metal particles on semiconductor nanowires$(SnO_2/Ti,\;Si/Ti)$ were formed on the surface of nanowires.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.24-24
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• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• 한국표면공학회지
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• 제34권5호
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• 한국막학회:학술대회논문집
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• 한국막학회 1994년도 춘계 총회 및 학술발표회
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• pp.57-57
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• 1994

졸-겔 침지코팅 (dipcoating) 또는 가압 졸-겔 코팅 (pressurized coating) 법으로 제조한 $\gamma-Al_2O_3, SiO_2, TiO_2$ 및 aluminosilicate 복합막에 대하여 $CO_2$, He, $N_2$, 및 $O_2$ 기체 투과율과 $CO_2$ 분리계수를 측정하였다. 이들 막을 통한 모든 기체의 이동은 Knudsen 유동이 지배적이었으며 $CO_2/N_2$의 분리계수는 0.9 ~ 1.1 정도로 Knudsen 분리계수 ($CO_2/N_2$의 경우 0.8)보다 약간 높은 값을 보여주었다. $CO_2$ 분리계수를 향상시키기 위하여 silane coupling 및 산화물 도핑법에 의한 복합막의 표면개질을 시도하였으며 분리막의 재질 및 표면개질 조건에 따른 $CO_2/N_2$ 분리계수 변화를 측정 비교하였다. Silane coupling에 의한 표면개질이 $CO_2$의 표면 친화성 (affinity)에 의한 표면확산속도를 증가시키기 때문에 $CO_2$ 분리에 있어서 산화물 도핑에 의한 표면개질보다 더욱 효과적이었다.

• Journal of Welding and Joining
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• 제28권3호
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• pp.92-98
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• 2010

Ferritic stainless steels, which have relatively small thermal expansion coefficient and excellent corrosion resistance, are increasingly being used in vehicle manufacturing, in order to increase the lifetime of exhaust manifold parts. But, there are limits on use because of the problem related to cosmetic resistance, corrosions of condensation and high temperature salt etc. So, Aluminum-coated stainless steel instead of ferritic stainless steel are utilized in these parts due to the improved properties. In this investigation, Al-8wt% Si alloy coated 409L ferritic stainless steel was used as the base metal during Gas Tungsten Arc(GTA) welding. The effects of coated layer on the microstructure and hardness were investigated. Full penetration was obtained, when the welding current was higher than 90A and the welding speed was lower than 0.52m/min. Grain size was the largest in fusion zone and decreased from near HAZ to base metal. As welding speed increased, grain size of fusion zone decreased, and there was no big change in HAZ. Hardness had a peak value in the fusion zone and decreased from the bond line to the base metal. The highest hardness in the fusion zone resulted from the fine re-precipitation of the coarse TiN and Ti(C, N) existed in the base metal during melting and solidification process and the presence of fine $Al_2O_3$ and $SiO_2$ formed by the migration of the elements, Al and Si, from the melted coating layer into the fusion zone.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.