• Journal of Powder Materials
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• v.2 no.1
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• pp.36-43
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• 1995

Rapidly solidified and mechanically alloyed Al-Ti base alloys were prepared by gas atomization and attritor milling separately. The gas atomized and the mechanically alloyed powders were consolidated after preheating at $450^{\circ}C$, and then heat treated isochronally for 1 hour to observe the microstructures and to investigate the mechanical properties. Stable phases of precipitates in the Al-Ti-Si and the Al-Ti-Zr alloys were identified as DO22-$(Al,Si)_3Ti$ and $Do_{23}-Al_3(Ti, Zr)$ each. Among the alloys, the mechanically alloyed Al-l0Ti-2Si alloy showed superior thermal stability and mechanical properties at elevated temperature. The additions of third elements, such as Si and Zr, to Al-Ti alloys seemed to improve the mechnical properties remarkably by stabilizing the microstructure and the precipitate phases in the consolidated alloys.

• Proceedings of the KWS Conference
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• 1996.10a
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• pp.173-175
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• 1996

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.191-196
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• 2019

This study assessed the feasibility of a Ti₃AlC₂ MAX phase as an Al-source for the formation of a mullite bond in the fabrication of porous SiC tubes with high strength. The as-received Ti₃AlC₂ was partially oxidized at 1200℃ for 30 min before using to minimize the abrupt volume expansion caused by oxidation during sintering. Thermal treatment at 1100-1400℃ for 3 h in air led to the formation of Al₂O₃ by the decomposition of Ti₃AlC₂, which reacted further with oxidation-derived SiO₂ on the SiC surface to form a mullite phase. The fabricated porous SiC tubes with a relative density of 48 - 62 % exhibited mechanical strengths of 80 - 200 MPa, which were much higher than those with the Al₂O₃ filler material. The high mechanical strength of the Ti₃AlC₂-added porous SiC was explained by the rigid mullite neck formation along with the retained Ti₃AlC₂ with good mechanical properties.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.147-148
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• 2007

The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.208-210
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• 2009

5성분계 Ti-Al-Si-C-N 코팅막은 하이브리드 코팅 시스템을 사용하여 실리콘 (Si) 웨이퍼와 SUS 304 기판위에 합성되었다. 본 연구에서는 Si 첨가에 의해 Ti-Al-Si-C-N 코팅막의 미세구조와 기계적 특성의 변화를 체계적으로 조사하였다. Si 함량이 증가됨에 따라 Ti-Al-Si-C-N 코팅막의 미세구조는 주상정에서 나노복합체를 가지는 미세구조로 변화하였다. 나노복합체의 고유한 특성에 의하여 미소경도는 약 56GPa로 증가하였고, Si가 증가함에 따라 평균 마찰계수도 크게 줄어들었다.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1003-1008
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• 2010

In this study, the effect of the reinforcement on the wear behaviour and mechanical properties of hypereutectic Al-Si alloys was investigated. The Gas atomized hypereutectic Al-20Si alloy powders were mixed with 1, 3, and 5 wt.% AlN and TiC ceramic particles and consolidated by hotpress. The Al-20Si powder has both finely dispersed primary Si phases and eutectic structures. The Al-20Si-AlN, TiC composites showed that the reinforcements were distributed along the boundary of the Al-20Si alloy. The UTS increased with increasing the AlN, TiC contents. At a lower load, with an increasing weight fraction of reinforcements, the wear rate decreased in both composites and the wear mechanism was adhesive wear. At a higher load, the shape of the debris changes the mechanism of the AlN composites to abrasive-adhesion wear and this resulted in an increase of the wear rate.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.68-68
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• 2015

질화 티타늄(titanium nitride; TiN)은 색상이 미려하고 물리적 특성이 우수한 특성에도 불구하고 내산화성이 낮아 이를 해결하기 위해서 TiN에 Al을 첨가한 TiAlN 소재가 개발되었다. 하지만 난삭재 가공용 공구의 사용 온도가 $800^{\circ}C$이상인 점을 고려하여 $800^{\circ}C$ 이상의 고온 환경에서도 산화가 일어나지 않는 고경도 박막 소재가 요구되고 있으며 TiAlN 소재에 Si을 첨가하면 내산화성이 향상된다는 연구결과가 보고되고 있다. 본 연구에서는 음극 아크 증착과 스퍼터링을 동시에 이용한 하이브리드 공정으로 제조한 TiAlSiN 박막의 Si 함량에 따른 미세구조, 물리적 특성 그리고 내산화성을 평가하였다.