• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.77-77
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• 2017

Titanium and its alloys offer attractive properties in a variety of applications. These are widely used for the field of biomedical implants because of its good biocompatibility and high corrosion resistance. Titanium anodizing is often used in the metal finishing of products, especially those can be used in the medical devices with dense oxide surface. Based on SAE/AMS (Society of Automotive Engineers/Aerospace Material Specification) 2488D, it has the specification for industrial titanium anodizing that have three different types of titanium anodization as following: Type I is used as a coating for elevated temperature forming; Type II is used as an anti-galling coating without additional lubrication or as a pre-treatment for improving adherence of film lubricants; Type III is used as a treatment to produce a spectrum of surface colours on titanium. In this study, we have focused on Type II anodization for the medical (dental and orthopedic) application, the anodized surface was modified with gray color under alkaline electrolyte. The surface characteristics were analyzed with Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), surface roughness, Vickers hardness, three point bending test, biocompatibility, and corrosion (potentiodynamic) test. The Ti-6Al-4V alloy was used for specimen, the anodizing procedure was conducted in alkaline solution (NaOH based, pH>13). Applied voltage was range between 20 V to 40 V until the ampere to be zero. As results, the surface characteristics of anodic oxide layer were analyzed with SEM, the dissecting layer was fabricated with FIB method prior to analyze surface. The surface roughness was measured by arithmetic mean deviation of the roughness profile (Ra). The Vickers hardness was obtained with Vickers hardness tester, indentation was repeated for 5 times on each sample, and the three point bending property was verified by yield load values. In order to determine the corrosion resistance for the corrosion rate, the potentiodynamic test was performed for each specimen. The biological safety assessment was analyzed by cytotoxic and pyrogen test. Through FIB feature of anodic surfaces, the thickness of oxide layer was 1.1 um. The surface roughness, Vickers hardness, bending yield, and corrosion resistance of the anodized specimen were shown higher value than those of non-treated specimen. Also we could verify that there was no significant issues from cytotoxicity and pyrogen test.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.265-273
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• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigate the surface carrier concentration, Hall electron mobility, electrical resistivity and sensitivity according to temperature variation and TMA gas concentration. The ZnO-based thin film sensors prepared by sputtering in oxygen showed higher surface carrier concentration, higher Hall mobility, higher sensitivity, and lower electrical resistivity than sensors prepared by sputtering in argon. The doping ZnO-based thin film sensors showed the same electrical properties in comparison with nondoping sensors. In case of sputtering on the oxygen gaseous atmosphere, the ZnO-based thin film sensors doped with 4.0 wt.% $Al_{2}O_{3}$, 1.0 wt.% $TiO_{2}$, and 0.2 wt.% $V_{2}O_{3}$ showed the highest surface carrier concentration of $5.95{\times}10^{20}cm^{-3}$, Hall electron mobility of $177\;cm^{2}/V{\cdot}s$, lowest electrical resistivity of $0.59{\times}10^{-4}{\Omega}{\cdot}cm$ and highest sensitivity of 12.1(working temperature, $300^{\circ}C$, TMA gas, 8 ppm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.73-74
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• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.53-56
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• 2004

The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• Journal of the Korean Magnetics Society
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• v.17 no.6
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• pp.232-237
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• 2007

We have synthesized the low temperature sintered of Ni-Zn-Cu ferrite with nonstoichiometric composition a little deficient in $Fe_2O_3$ from $(Ni_{0.2}Cu_{0.2}Zn_{0.6})_{1+x}(Fe_2O_3)_{1-x}$. For low loss and acceleration of grain growth $TiO_2$ and $Li_2CO_3$ was added from 0.25 mol% to 1.0 mol%. The mixture of the law materials was calcinated and milled. The compacts of toroidal type were sintered at different temperature $(875^{\circ}C,\;900^{\circ}C,\;925^{\circ}C\;950^{\circ}C)$ for 2 hours in air followed by an air cooling. Then, effects of composition and sintering temperatures on the physical properties such as density, resistivity, magnetic induction, coercive force, initial permeability, and quality factor of the Ni-Zn-Cu ferrite were investigated. The density of the Ni-Zn-Cu ferrite was $4.85\sim5.32g/cm^3$, resistivity revealed $10^8\sim10^{12}\Omega-cm$. The magnetic properties obtained from the aforementioned Ni-Zn-Cu ferrite specimens were 1,300 gauss for the maximum induction, 4.5 oersted for the coercive force, 275 for the initial permeability, and 83 for the quality factor. The physical properties indicated that the specimens could be utilized as the core of high frequency range (involved microwave range) communication and deflection yoke of T.V.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.69-69
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• 2000

(Ba, Sr)TiO3 (BST)[1-3] 박막은 유전상수가 크고 고주파에서도 유전특성 저하가 적기 때문에 ULSI DRAM(Dynamic Random Access Memory)에 응용 가능한 물질로 최근 각광을 받고 있다. 하지만, 아직 BST 박막을 DRSM에 바로 적용하기 위해선 몇 가지 문제점이 있다. 그 중 누설전류 문제는 디바이스 응용시 매우 중요한 요소이다. 특히, DRAM에서 refresh time와 직접적인 관련이 있어 디바이스 내의 신뢰도 및 전력소모를 결정하는 주된 인자가 된다. 지금까지, BST 박막의 인가전업, 온도, 그리고 전극물질에 따른 누설전류 현상들이 고찰되었고, 이에 관한 많은 전도기구 모델들이 제시되었다. Schottky emission, Poole-Frenkel emission, space charge limited conduction 등이 그 대표적인 예이다. 하지만 아쉽게도 BST 박막의 정확한 누설 전류 전도 기구를 완전히 설명하는데는 아직 한계가 있다. 따라서 본 연구에서는 제작된 BST 커패시터 내의 기본적인 전기적 성질을 조사하고, 정확한 누설전류 기구 규명에 초점을 두고자 한다. 이를 위해 기존의 여러 기구들과 비교 분석할 것이다. 하부전극으로 사용하기 위해 스퍼터링 방법으로 p-Si(100) 기판위에 RuO2 박막을 약 120nm 증착하였다. 증착전의 chamberso의 초기압력은 5$\times$10-6 Torr이하의 압력으로 유지시켰다. Ar/O2의 비는 이전 실험에서 최적화된 9/1로 하였다. BST 박막 증착 시 5분간 pre-sputtering을 실시한 후 하부전극 기판위에 BST 박막을 증착하였다. 증착이 끝난 후 시편을 상온까지 냉각시킨 후 꺼내었다. 전기적 특성을 측정하기 상부전극으로 RuO2와 Al 박막을 각각 상온에서 100nm 증착하였다. 이때 hole mask를 이용하여 반경이 140um인 원형의 상부전극을 증착하였다. BST 박막의 증착온도가 증가하고 Ar/O2 비가 감소할수록 제작된 BST-커패시터의 전기적 성질이 우수하였다. 증착온도 $600^{\circ}C$, ASr/O2=5/5에서 증착된 막의 누설전류는 4.56$\times$10-8 A/cm2, 유전상수는 600 정도의 값을 나타내었다. 인가전압에 따른 BST 커패시터의 transition-current는 Curie-von Schweider 모델을 따랐다. BST 박막의 누설전류 전도기구는 기존의 Schottky 모델이 아니라 modified-Schottky 무델로 잘 설명되었다. Modified-Schottky 모델을 통해 BST 박막의 광학적 유전율 $\varepsilon$$\infty$=4.9, 이동도 $\mu$=0.019 cm2/V-s, 장벽 높이 $\psi$b=0.79 eV를 구하였다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.50-56
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• 1998

Ion beam assisted deposition (IBAD) was successfully used to produce a dense and ultra-adherent Hydroxyapatite (HA) film on titanium alloy and alumina. Recently it is also proved that the HA coatings on alumina substrate treated with 20 ppm $AgNO_3$ had the structure of $(Ag, Ca)_10(PO_4)6(OH)_2$, which exhibited excellent antimicrobial effects. The present paper aims to morphlogically characterize the adhesion of macrophages on newly developed Ag-HA coated alumina and Ti6A14V substrates and to evaluate the biocompatibility of the coatings in vitro. It can be found that the cell number on alumina of the concentration of $AgNO_3$ in the treatment, the cell number on Ag-HA coatings decreased. Up to 20 ppm $AgNO_3$ by Ag-treatment, the morphological development of the cells on Ag-HA coating was similar to that of the cells on HA coating, suggesting the biotolerance of the Ag-HA coatings.