• Journal of the Korean Chemical Society
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• v.25 no.4
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• pp.236-245
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• 1981

The electrical conductivities of oxidized pure and Ni-doped $SrTiO_3$ single crystals were measured as a function of the oxygen partial pressure($Po_2$) at temperature from 700 to $1200^{\circ}C$ and $Po_2$ of $10^{-8}$ to $10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $Po_2$ were found to be linear, and the activation energies obtained from the slopes of these plots have an average value of 1.34 eV for oxidized pure and 1.06 eV for oxidized Ni-doped $SrTiO_3$ single crystals at $Po_2$'s between $10^{-8}$ to $10^{-1}$ atm. The log ${\sigma}$ vs. log $Po_2$ curves at constant temperature were found to be linear with an average slope of ${\frac{-1}{5.6}}\;{\sim}\;{\frac{-1}{6.2}}$ in the $Po_2$ ranges. From the agreement between experimental and theoretically predicted values for the electrical conductivity dependences on $Po_2$, an oxygen vacancy defect model was found applicable to oxidized pure and Ni-doped $SrTiO_3$ single crystals over the temperature range, 700~$1200^{\circ}C$. Conduction mechanisms were proposed to explain the dependences of electrical conductivity on temperature and $Po_2$.

• Journal of Powder Materials
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• v.21 no.4
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• pp.277-285
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• 2014

The effects of processing parameters on the flow behavior and microstructures were investigated in hot compression of powder metallurgy (P/M) Ti-6Al-4V alloy. The alloy was fabricated by a blended elemental (B/E) approach and it exhibited lamellar ${\alpha}+{\beta}$ microstructure. The hot compression tests were performed in the range of temperature $800-1000^{\circ}C$ with $50^{\circ}C$ intervals, strain rate $10^{-4}-10s^{-1}$, and strain up to 0.5. At $800-950^{\circ}C$, continuous flow softening after a peak stress was observed with strain rates lower than $0.1s^{-1}$. At strain rates higher than $1s^{-1}$, rapid drop in flow stress with strain hardening or broad oscillations was recorded. The processing map of P/M Ti-6Al-4V was designed based on the compression test and revealed the peak efficiency at $850^{\circ}C$ and $0.001s^{-1}$. As the processing temperature increased, the volume fraction of ${\beta}$ phase was increased. In addition, below $950^{\circ}C$, the globularization of phase at the slower strain rate and kinking microstructures were found. Based on these data, the preferred working condition of the alloy may be in the range of $850-950^{\circ}C$ and strain rate of $0.001-0.01s^{-1}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.6
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• pp.130-136
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• 2002

A novel ozonizer has been developed using a high frequency surface discharge and a high purity Ti-Si-Al ceramic catalyst as its dielectric component. A cylindrical thin compound ceramic catalyst in reactor is adhered to inside of the film-like outside electrode. And, when experiment condition are oxygen gas temperature of 20 ［$^{\circ}C$］, inner reactor pressure of 1.6 atm 600［Hz］ and flow late of 2［l/min］. the ozonizer can easily produce ozone concentration(50～60［g/㎥］for oxygen) and power efficiency(180［g/kWh］for oxygen) without using a special enrichment means. At 2［l/min］, 20［$^{\circ}C$］, 1.6［atm］, 600［Hz］and 40［W］, the result of simulation to gas temperature of reactor using general code Phoenics, the maximum temperature of reactor was 132［$^{\circ}C$］in reactor. Ant the result electric field simulation of Ti-Si-Al type reactor using general code Flux 2D, maximum electric field was 0.131E.08［V/m］.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.575-580
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• 2010

Effects of the surface modification on the deposition behaviors of apatite crystals in Zr-1Nb plates were studied. Zr-1Nb alloy plates were polished with abrasive papers to have different roughness and some of them were treated in NaOH or coated with collagen before deposition of apatites in the simulated body fluid (SBF). The weight gain due to the deposition of apatite crystals increased as the surface roughness increased in Zr-1Nb. The size of granular apatite crystals were found to be smaller in Zr-1Nb roughened by $162{\mu}m$ abrasive paper than in Zr-1Nb roughened by $8.4{\mu}m$ paper, suggesting the nucleation rate increased with increase of surface roughness. After, 10 days immersion in a SBF, NaOH-treated Zr-1Nb was completely coated with apatite with the deposited apatite weight comparable to that in Ti-6Al-4V. The deposition rate of Zr-1Nb was not appreciably influenced by NaOH treatment unlike the significant influence of NaOHtreatment on the deposition rate of apatite in Ti-6Al-4V. One significant observation in this study is an appreciable increase of the apatite deposition rate after collagen coating both on Zr-1Nb and Ti-6Al-4V plate, which may be caused by the interaction between collagen and $Ca^{+2}$ ions.

• Journal of Technologic Dentistry
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• v.25 no.1
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• pp.81-87
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• 2003

Ti-20%Zr-X%Cr(X=0,5) based alloys not containing hamful Al and V were newly designed in order to reveal their possibility for dental casting alloys, and melted in argon-arc casting machine. The mechanical properties were evaluated by using universal testing machine. The tensile strength and %elongaton of the alloys markedly increased with Cr content. The Ti-20%Zr-5%Cr alloy showed a similar tendency with Ti-6%Al-4%V alloy in tensile strength, but surpassed in %elongation. From these results, it was concluded that new alloys for successful dental casting materials should be designed as Ti-Zr-Cr based alloys.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Corrosion Science and Technology
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• v.8 no.2
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• pp.62-67
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• 2009

Ti and Ti-alloys have good biocompatibility, appropriate mechanical properties and excellent corrosion resistance. However, the widely used Ti-6Al-4V is found to release toxic ions (Al and V) into the body, leading to undesirable long-term effects. Ti-6Al-4V has much higher elastic modulus (100 GPa) than cortical bone (20 GPa). Therefore, titanium alloys with low elastic modulus have been developed as biomaterials to minimize stress shielding. The electrochemical behavior of surface-modified and MC3T3-E1 cell-cultured Ti-30(Nb,Ta) alloys with low elastic modulus have been investigated using various electrochemical methods. Surfaces of test samples were treated as follows: $0.3{\mu}m$ polished; $25{\mu}m$, $50{\mu}m$ and $125{\mu}m$ sandblasted. Specimen surfaces were cultured with MC3T3-E1 cells for 2 days. Average surface roughness ($R_a$) and morphology of specimens were determined using a surface profilometer, OM, and FE-SEM. Corrosion behavior was investigated using a potentiostat(EG&G PARSTAT 2273), and electrochemical impedance spectroscopy was performed (10 mHz to 100 kHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The microstructures of the Ti-30(Ta,Nb) alloys had a needle-like appearance. The $R_a$ of polished Ti-30Ta and Ti-30Nb alloys was lower than that of the sandblasted Ti alloy. Cultured cells displayed round shapes. For polished alloy samples, cells were well-cultured on all surfaces compared to sandblasted alloy samples. In sandblasted and cell-cultured Ti-30(Nb,Ta) alloy, the pitting potential decreased and passive current density increased as $R_a$ increased. Anodic polarization curves of cell-cultured Ti alloys showed unstable behavior in the passive region compared to non-cell-cultured alloys. From impedance tests of sandblasted and cell-cultured alloys, the polarization resistance decreased as $R_a$ increased, whereas, $R_a$ for cell-cultured Ti alloys increased compared to non-cell-cultured Ti alloys.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.