• 센서학회지
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• 제12권1호
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• pp.10-15
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• 2003

초전형 적외선 센서의 감지물질로 사용하기 위해 $PbTiO_3$/P(VDF/TrFE) 복합재료 박막을 스핀코팅방법을 사용하여 제작하였다. 시료는 65 wt% VDF와 35 wt% TrFE의 함량 P(VDF/TrFE) 분말을 사용하였으며 세라믹-고분자 복합재료를 제조하기 위하여 사용된 세라믹은 $PbTiO_3$ 분말을 사용하였다. 제조된 복합재료의 P(VDF/TrFE)와 $PbTiO_3$의 결합성을 확인하기 위해 제조된 박막의 표면은 SEM을 통해 관찰하였고 복합재료의 커패시턴스와 비유전율, 유전손실은 임피던스 분석기 (HP4192A)로 측정하였으며, 복합재료의 초전계수는 반도체 파라미터 분석기(HP4145B)로 조사하였다.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• 한국표면공학회지
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• 제37권6호
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• pp.307-312
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• 2004

Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

• 한국결정성장학회지
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• 제19권5호
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• pp.256-261
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• 2009

Sol-gel법에 의해 친수성 투명 $TiO_2$ 박막이 제조되었고, 박막의 접촉각, 표면구조, 투과율의 특성이 측정되었다. 더욱이 박막의 친수 특성을 향상시키기 위하여 계면활성제 tween 80이 이용되었다. Tween 80의 첨가량이 0, 10, 30, 50wt%일 때, 제조된 박막의 접촉각은 각각 $41.4^{\circ}$, $18.2^{\circ}$, $16.0^{\circ}$, $13.2^{\circ}$로 확인되었다. 제조된 $TiO_2$ 박막은 자외선 조사 후 Methylene blue용액을 분해시켜 흡광도를 감소시키는 광촉매 특성을 보여주었다. 일반유리(bare glass), Antimony Tin Oxide(ATO)코팅 유리, Fluorine Tin Oxide(FTO)코팅유리, Indium Tin Oxide(ITO)코팅유리 기판 위 에 Tween 80을 30 wt% 함유한 $TiO_2$ 용액을 적층하여 박막의 접촉각과 투과율을 측정하였다. 다양한 기판에 제조된 박막은 $16.2\sim27.1^{\circ}$의 표면 접촉각을 나타냈으며 자외선 조사 후에는 접촉각이 $13.2\sim17.6^{\circ}$로 낮아졌다. 특히 ATO코팅유리와 FTO 코팅유리 기판 위에 코팅된 필름은 가시광선 영역에서 각각 74.6%, 76.8%의 높은 투과율을 나타내었고, 적외선 영역에서는 각각 54.2%, 40.4%의 낮은 투과율을 나타냈다.

• 한국세라믹학회지
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• 제33권6호
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• pp.623-630
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• 1996

A Sol-gel derived ferroelectric PbTiO3 thin film was synthesized by using diethanolamine (DEA) as a comple-xing agent. Surface chemical analyses were examined in order to study the effect of heating temperature on the composition of thin film by EPMA and XPS. A rapid volatilization of lead was observed in the films fired at $700^{\circ}C$ or higher and the ratio of Pb:Ti was found to be 34:66. A depth profile by Ar+ showed that the Ar sputtering decreased Pb amount of inner part of the film resulting in Ti-rich phase near the surface of the film.

• 전자공학회논문지A
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• 제30A권10호
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• 한국세라믹학회지
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• 제33권7호
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• pp.802-808
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• 1996

PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 한국결정성장학회지
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• 제10권6호
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• pp.378-380
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• 2000

The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.