• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.439-443
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• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.147-148
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• 2007

In this study, the technology to grow oriented nanotube thin film from dip-coated $TiO_2$ using hydrothermal method has been successfully developed. The effects of preparation parameters, such as reaction temperature, duration and post treatment conditions on the film morphologies and the adherence to the substrate, have been examined. A general formation mechanism of oriented titanate nanotube thin film is proposed in terms of the detailed observation of the products via two dimensional surface FESEM studies and HRTEM images. The overall formation of $TiO_2-based$ nanotube thin film can be summarized with three successive steps: (1) $TiO_2$ dissolving and amorphous $Na_2TiO_3$ deposition process; (2) layered $Na_2Ti_3O_7$ formation via spontaneous crystallization and rapid growth process; (3) formation of nanotube thin film via $Na_2Ti_3O_7$ splitting and multilayer scrolling process of (100) planes around the c axis of $Na_2Ti_3O_7$.

• 태양에너지
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• 제10권2호
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• pp.69-76
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• 1990

[ $TiO_2$ ] 박막을 물에 담그고 빛을 조사하였을때의 물의 광전기화학적 분해현상을 관찰하였다. $TiO_2$ 박막은 스프레이법에 의해 $SnO_2$ 네사글라스를 만들고 이 네사글라스 위에 딥-코오팅법을 이용하여 $TiO_2$ 박막을 코오팅하였다. 다양한 두께의 $TiO_2$ 박막의 I-V 특성을 조사하였고 SEM에 의해 그 표면 상태를 알아 보았다. 필름의 두께가 $1.8{\mu}m$ 일때 광전기 전류가 최대로 나타남을 볼 수 있었다. $TiO_2$ 박막을 산성 수용액(pH=1)에 담그고 Xe-램프를 광원으로 하여 광전기 화학반응에 의한 물의 광 분해에 의해 산소 및 수소 가스가 발생함을 볼 수 있었다.

• 한국표면공학회지
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• 제50권5호
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.

• 전자공학회논문지A
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• 제31A권9호
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• pp.89-95
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• 1994

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.121-124
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• 1999

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1183-1191
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• 2001

The metallorganic chemical vapor deposition (MOCVD) method has been used to prepare TiO2 thin films for the degradation of hazardous organic compounds, such as 2-chlorophenol (2-CP). The effect of supporting materials and metal doping on the photocatalytic activity of TiO2 thin films also has been studied. TiO2 thin films were coated onto various supporting materials, including stainless steel cloth(SS), quartz glass tube (QGT), and silica gel (SG). Transition metals, such as Pd(II), Pt(IV), Nd(III) and Fe(III), were doped onto TiO2 thin film. The results indicate that Nd(Ⅲ) doping improves the photodegradation of 2-CP. Among all supporting materials studied, SS(37 ${\mu}m)$ appears to be the best support. An optimal amount of doping material at 1.0 percent (w/w) of TiO2-substrate thin film gives the best photodegration of 2-CP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.138-139
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• 2007

In this paper, we have studied the optical properties of $TiO_2$ thin film by adding the additives of PEG, PEO and both of them. As a variable amount of additives was added into $TiO_2$, the transmittance of $TiO_2$ thin film was decreased. When the 20 wt% of additives mixed with PEG and PEO was added into $TiO_2$, the transmittance of $TiO_2$ thin film showed higher than that of 10 wt% of additives mixed with PEG and PEO. As a results, we could conclude that the additives makes pore in $TiO_2$ thin film and it improves the transmittance of $TiO_2$ thin film.

• 열처리공학회지
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• 제14권3호
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• 대한환경공학회지
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• 제27권1호
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• pp.59-66
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• 2005

[ $TiO_2$ ]박막은 DC 마그네트론 스퍼터링법을 이용하여 다양한 스퍼터링 파라미터(전력 $0.6{\sim}5.2\;kw$, 기판온도 실온${\sim}350^{\circ}C$, 산소량 $0{\sim}50\;sccm$($O_2+Ar$ 90 sccm, 압력은 약 1 mtorr))를 통하여 증착되었다. TiO-N박막도 가스의 유량비를 제외하고는 $TiO_2$박막과 같은 스퍼터링 조건하에서 증착되었다. 이러한 스퍼터링 파라미터에서 증착된 박막의 전기적 특성을 분석하기 위하여 시트저항을 측정하였고, 박막의 두께(${\alpha}$-step), 표면 거칠기(AFM), 형성 조직(FE-SEM, XRD)을 분석하여 최적 스퍼터링 파라미터를 도출하였다. 최적 스퍼터링 파라미터에서 제조된($TiO_2$, TiO-N)박막을 이용하여 광활성도를 평가하기 위하여 VOCs물질 중 toluene, 반응성 염료인 Suncion Yellow를 대상 물질로 선정하여 적용성 연구를 수행하였다. 실험에서 광촉매 박막은 적용물질에 대해서 광활성을 양호하게 보였으며, 특히 TiO-N광촉매 박막은 가시광 영역에서도 최대 33%의 톨루엔(5 ppm) 제거 효율을 나타내었다.