• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.346-351
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• 2016

Titanium dioxide ($TiO_2$) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and $H_2O$ as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the $TiO_2$ film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.174-175
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• 2002

A ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)MiO(60 nm)/barrier SrTiO$_3$(2-10 nm)/free NiFe(10 nm) with the 15 degree slope was investigated. We obtained nonlinear I(V) characteristics for ramp-type tunneling junctions that have distinctive difference with and without applied magnetic field. In the barrier SrTiO$_3$ thickness of 4 nm, the TMR was about 52% at a bias voltage of 50 mV. (omitted)

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.1982-1988
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• 2009

$TiO_2$ films are fabricated using silk printing method. Heat treatment temperature of films is 600[$^{\circ}C$]. From the analysis of microstructure, grain size of $TiO_2$ films is about $0.2{\sim}0.3[{\mu}m]$. Thickness of films is 30.19[${\mu}m$] and surface uniformity of films is good. From the analysis of crystalline structure, $TiO_2$ films transform anatase phase to rutile phase. Capacitance of films increases according to increase relative humidity and decrease measuring frequency. Hysteresis characteristics of capacitance and impedance are best at 45[%RH] and 75[%RH] respectively. Impedance of films increases according to decrease measuring frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.217-220
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• 1997

(Ba,Sr)TiO$_3$ thin film capacitors were prepared on SiO$_3$/Si(100)wafer by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Microstructural properties of (Ba,Sr)TiO$_3$ thin films were investigated by the SEM, XRD. The thickness and grain size were studied for the varying of RF power and temperature.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.439-446
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• 2017

Plasma electrolyte oxidation (PEO) is a kind of anodization, in which a very high voltage or current is applied to a metal substrate in various electrolytes, allowing distinctly thick thickness of the oxide film with outstanding film properties, such as a good corrosion resistance, mechanical strength, thermal stability, and excellent adhesion to a substrate. Herein, we tried to find the optimal pretreatment conditions among commercially available solutions in order to produce PEO anodizing at relatively low voltage. We characterized the surface morphologies of the sample by scanning electron microscope (SEM), atomic force microscopy (AFM), and investigated color parameters of the pretreated surface of Ti by spectrophotometer.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.260-265
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• 1993

An in-situ stress measurement interferometer is constructed and used to measure the intrinsic stress in Ti$O_2$ thin films during their growth by ion-assisted deposition. It is found that the stress increases with the momentum transferred by the ion beam to the growing film and is fairly well agreed with Windischmann's model. The variation of the stress with thickness is qualitatively explained in terms of the balance between the compressive stress produced by the ion beam and the surface diffusion determined by the surface temperature.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.401-405
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• 2001

The effects of oxide layer formed on TiN coated ball and counter-body have been investigated from the frictional point of view during sliding tests. AISI52100 steel ball was used for the substrate of coated specimens. Two types of coated specimens were prepared by depositing TiN coating with 1 and 4$\mu\textrm{m}$ in coating thickness. AISI1045 steel was used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation.

• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1181-1186
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• 2000

The structural evolution during the thermal treatment of $70SiO_2-3OTiO_2(mole%)$ sol-gel derived powders and films was investigated by FT-IR, Raman and XPS, and XRD. From these results, the $TiO_2-rich$ regions involving $Ti^{4+}$ ions in octahedral coordination were confirmed to be amorphous at $600^{\circ}C$. However, Raman spectra along with XRD patterns indicated that at high temperature (above $700^{\circ}C)$, the amorphous $TiO_2was$ segregating to form anatase crystal. Also, the effect of experimental variables such as thermal treatment, heating rate and exposure to water vapor on structural changes, refractive index and thickness of the film coated on sodalime-silicate glass were investigated.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.199-209
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• 1994

$PbTiO_3$ thin films were prepared on soda-lime-silica slide glasses, Si-wafer and sapphire substrate by the dip-coating of precursor solution. As starting materials, titanium tetra iso-propoxide and lead acetate trihydrate were used. Then acetylacetone was added to prepare stable sol. The effect of the parameters such as viscosity and composition of sol were investigated. The optical transmittance at visible range, refractive index, IR spectra were measured in varying compositions, thickness and heat treatment temperature. The crystallization of $PbTiO_3$ films were measured by using XRD and SEM. Diffusion of compositions from slide glass to thin film were investigated by using EDX, too. These sols not precipitated for 20 days. Transmittance of $PbTiO_3$ films at visible range were decreased with the increase of thickness and heat treatment temperatures, and were exhibited flat spectra. Pyrochlore type appeared in the films on slide glass and perovskite type appeared in the films on Si-wafer or sapphire at $600^{\circ}C$. Perovskite crystals transformed to $PbTi_3O_7$ phase at $800^{\circ}C$.